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PHD36N03LT,118

P1-P3P4-P6P7-P9P10-P12P13-P13
PHD_PHP36N03LT_2 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet Rev. 02 — 8 June 2006 4 of 13
Philips Semiconductors
PHD/PHP36N03LT
N-channel TrenchMOS logic level FET
5. Thermal characteristics
[1] Mounted on a printed-circuit board; vertical in still air.
Table 4. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-mb)
thermal resistance from junction to mounting base see Figure 4 - - 2.6 K/W
R
th(j-a)
thermal resistance from junction to ambient
SOT78 vertical in free air - 60 - K/W
SOT428 minimum footprint
[1]
- 75 - K/W
SOT404 minimum footprint
[1]
- 50 - K/W
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
001aae810
10
−5
t
p
(s)
10
−1
110
−2
10
−4
10
−3
1
10
−1
10
Z
th(j−mb)
(K/W)
10
−2
δ = 0.5
0.05
0.02
single pulse
0.2
0.1
t
p
t
p
T
P
t
T
δ =
PHD_PHP36N03LT_2 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet Rev. 02 — 8 June 2006 5 of 13
Philips Semiconductors
PHD/PHP36N03LT
N-channel TrenchMOS logic level FET
6. Characteristics
Table 5. Characteristics
T
j
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V
(BR)DSS
drain-source breakdown
voltage
I
D
= 250 µA; V
GS
=0V
T
j
=25°C 30--V
T
j
= −55 °C 27--V
V
GS(th)
gate-source threshold voltage I
D
= 250 µA; V
DS
=V
GS
; see Figure 9 and 10
T
j
=25°C 1 1.5 2 V
T
j
= 175 °C 0.5 - - V
T
j
= −55 °C - - 2.2 V
I
DSS
drain leakage current V
DS
=24V; V
GS
=0V
T
j
=25°C - 0.05 1 µA
T
j
= 175 °C - - 500 µA
I
GSS
gate leakage current V
GS
= ±20 V; V
DS
= 0 V - 10 100 nA
R
DSon
drain-source on-state
resistance
V
GS
= 4.5 V; I
D
= 12 A; see Figure 6 and 8
T
j
=25°C - 18 22 mΩ
T
j
= 175 °C - 32.4 39.6 mΩ
V
GS
= 10 V; I
D
= 25 A; see Figure 6 and 8 - 1417mΩ
V
GS
= 3.5 V; I
D
= 5.2 A; see Figure 6 and 8 - 2240mΩ
Dynamic characteristics
Q
G(tot)
total gate charge I
D
= 36 A; V
DS
=15V; V
GS
=10V;
see
Figure 11 and 12
- 18.5 - nC
Q
GS
gate-source charge - 4.2 - nC
Q
GD
gate-drain charge - 2.9 - nC
C
iss
input capacitance V
GS
=0V; V
DS
= 25 V; f = 1 MHz;
see
Figure 14
- 690 - pF
C
oss
output capacitance - 160 - pF
C
rss
reverse transfer capacitance - 110 - pF
t
d(on)
turn-on delay time V
DS
=15V; R
L
= 0.6 Ω; V
GS
=10V;
R
G
=10Ω
-6-ns
t
r
rise time -10-ns
t
d(off)
turn-off delay time - 33 - ns
t
f
fall time -19-ns
Source-drain diode
V
SD
source-drain voltage I
S
= 25 A; V
GS
= 0 V; see Figure 13 - 0.97 1.2 V
PHD_PHP36N03LT_2 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet Rev. 02 — 8 June 2006 6 of 13
Philips Semiconductors
PHD/PHP36N03LT
N-channel TrenchMOS logic level FET
T
j
=25°CT
j
=25°C
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig 6. Drain-source on-state resistance as a function
of drain current; typical values
T
j
=25°C and 175 °C; V
DS
>I
D
× R
DSon
Fig 7. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature
V
DS
(V)
0 1.00.80.4 0.60.2
001aae812
10
20
30
I
D
(A)
0
V
GS
(V) = 2.4
2.6
2.8
3.0
3.2
3.4
3.53.84.510
I
D
(A)
0403010 20
001aae813
20
10
30
40
R
DSon
(mΩ)
0
3.5
3.8
4.5
10
V
GS
(V) = 3.4
V
GS
(V)
04312
001aae814
20
10
30
40
I
D
(A)
0
T
j
= 25 °C
175 °C
03af18
0
0.5
1
1.5
2
-60 0 60 120 180
T
j
(
°
C)
a
a
R
DSon
R
DSon 25°C()
------------------------------
=
P1-P3P4-P6P7-P9P10-P12P13-P13

PHD36N03LT,118

Mfr. #:
Buy PHD36N03LT,118
Manufacturer:
NXP Semiconductors
Description:
MOSFET N-CH 30V 43.4A DPAK
Lifecycle:
New from this manufacturer.
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