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PHD36N03LT,118
P1-P3
P4-P6
P7-P9
P10-P12
P13-P13
PHD_PHP36N03L
T_2
© Koninklijk
e Philips Electronics N.V
. 2006. All rights reser
ved.
Product data sheet
Rev
. 02 — 8 June 2006
7 of 13
Philips Semiconductors
PHD/PHP36N03L
T
N-channel T
renc
hMOS logic level FET
I
D
= 1 mA; V
DS
=V
GS
T
j
=2
5
°
C; V
DS
=5V
Fig 9.
Gate-source threshold v
olta
ge as a function of
junction temperature
Fig 10.
Sub-threshold drain current as a function of
gate-source v
olta
ge
I
D
= 36 A; V
DS
=1
5V
Fig 11.
Gate-source v
olta
ge as a function of gate
charge; typical v
alues
Fig 12.
Gate charge wa
veform definitions
03aa33
0
0.
5
1
1.
5
2
2.
5
-
60
0
60
120
180
T
j
(
°
C)
V
GS(t
h)
(V)
max
ty
p
min
03aa36
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
0123
V
GS
(V)
I
D
(A)
max
ty
p
min
Q
G
(nC)
02
0
15
51
0
001aae817
4
6
2
8
10
V
GS
(V)
0
003aaa508
V
GS
V
GS(th)
Q
GS1
Q
GS2
Q
GD
V
DS
Q
G(tot)
I
D
Q
GS
V
GS(pl)
PHD_PHP36N03L
T_2
© Koninklijk
e Philips Electronics N.V
. 2006. All rights reser
ved.
Product data sheet
Rev
. 02 — 8 June 2006
8 of 13
Philips Semiconductors
PHD/PHP36N03L
T
N-channel T
renc
hMOS logic level FET
T
j
=2
5
°
C and 175
°
C; V
GS
=0V
V
GS
= 0 V
; f = 1 MHz
Fig 13.
Source current as a function of sour
ce-drain
v
oltage; typical values
Fig 14.
Input,
output
and
rever
se
transfer
capacitances
as a function of drain-source v
olta
ge; typical
values
V
SD
(V)
0
1.2
0.9
0.3
0.6
001aae815
20
10
30
40
I
S
(A)
0
T
j
= 25
°
C
175
°
C
V
DS
(V)
10
−
1
10
2
10
1
001aae816
10
3
10
2
10
4
C
(pF)
10
C
iss
C
oss
C
rss
PHD_PHP36N03L
T_2
© Koninklijk
e Philips Electronics N.V
. 2006. All rights reser
ved.
Product data sheet
Rev
. 02 — 8 June 2006
9 of 13
Philips Semiconductors
PHD/PHP36N03L
T
N-channel T
renc
hMOS logic level FET
7.
P
ac
ka
ge outline
Fig 15.
P
acka
ge outline SOT428 (DP
AK)
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
JEITA
SOT428
SC-63
TO-252
SOT428
06-02-14
06-03-16
DIMENSIONS (mm are the original dimensions)
Plastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped)
A
2
13
E
1
D
2
D
1
H
D
L
L
1
L
2
e
1
e
mounting
base
wA
M
b
E
b
2
b
1
c
A
1
y
0
5
10 mm
scale
UNIT
mm
0.93
0.46
5.46
5.00
0.56
0.20
6.22
5.98
6.73
6.47
10.4
9.6
2.95
2.55
A
1
2.38
2.22
Ab
2
1.1
0.9
b
1
e
1
0.89
0.71
bc
D
1
0.9
0.5
L
2
Ee
2.285
4.57
4.0
D
2
min
4.45
E
1
min
0.5
L
1
min
H
D
Lw
0.2
y
max
0.2
A
P1-P3
P4-P6
P7-P9
P10-P12
P13-P13
PHD36N03LT,118
Mfr. #:
Buy PHD36N03LT,118
Manufacturer:
NXP Semiconductors
Description:
MOSFET N-CH 30V 43.4A DPAK
Lifecycle:
New from this manufacturer.
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