Vishay introduces the dual DPDT / quad SPDT analog switch featuring low resistance of 0.37 Ω at 2.7 V in the compact 2.6 mm x 1.8 mm x 0.55 mm miniQFN16 package.
Date: 2017-05-25Vishay Siliconix's SIRA20DP TrenchFET® Gen IV MOSFET provides the lowest maximum RDS(on) rating at VGS = 10 V.
Date: 2017-05-04The Vishay Siliconix SiA468DJ provides the industry’s lowest on-resistance and highest continuous drain current for 30 V devices in 2 mm by 2 mm plastic packages.
Date: 2017-04-03Vishay's SiR638DP offers a best-in-class combination of RDS(ON) and output capacitance (Coss), for reduced system power losses.
Date: 2016-10-10Vishay has extended the offering of 600 V and 650 V E series power MOSFETs with three n-channel devices in the compact PowerPAK SO-8L package.
Date: 2016-07-05Vishay Siliconix introduces their SQJ200EP and SQJ202EP AEC-Q101 qualified 12 V and 20 V MOSFETs in a dual asymmetric package for synchronous buck applications.
Date: 2016-06-30Vishay introduces a 1.4 mm by 1.8 mm miniQFN10 package with an ultra-thin 0.35 mm profile, providing a space-saving alternative to larger miniQFN10 and WCSP devices.
Date: 2016-05-12Vishay’s 650 V EF series of fast body diode MOSFETs provides a full complement to Vishay's standard E series components by delivering a 10 times lower Qrr.
Date: 2016-05-03Vishay Siliconix introduces Si8817DB P-Channel 20 V MOSFET for power management applications for portable electronics.
Date: 2016-03-04Vishay’s DG250x are 200 Ω precision monolithic quad single-pole single-throw (SPST) analog switches in the ultra-compact WCSP 4 bump by 4 bump array package.
Date: 2016-02-24