Si8817DB P-Channel 20 V MOSFET

By Vishay/Siliconix 64

Si8817DB P-Channel 20 V MOSFET

The Si8817DB P-Channel MOSFET from Vishay Siliconix can be used for battery- or load- switching in power management applications for portable electronics, such as smart phones, tablet PCs, and mobile computing devices. The MOSFET's compact outlines save PCB space and provide ultra-thin profiles to enable slimmer and lighter portable electronics, while their low on-resistance translates into lower conduction losses for reduced power consumption and longer battery life between charges. The device's low on-resistance also means a lower voltage drop across the load-switch to prevent unwanted under-voltage lockout.

The MOSFETs are built on an ultra-high density technology, which uses self-aligning process technologies to pack one billion transistor cells into each square inch of silicon. When combined with MICRO FOOT’s packageless CSP technology, this provides the lowest on-resistance for a given outline area.

The -20 V P-Channel Si8817DB is optimized for buck converter applications. With 76 mΩ maximum on-resistance at a 4.5 V gate drive, the small 0.8 mm by 0.8 mm by 0.4 mm will be used for applications where space is even more critical than on-resistance.

Features
  • TrenchFET power MOSFET
  • Small 0.8 mm x 0.8 mm outline area
  • Low 0.4 mm maximum profile
 Applications    
  • Load- and charger-switches
  • Battery management
 
  • DC/DC converters
  • Smartphones and tablet PCs

New Products:

SI8817DB-T2-E1

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