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HMC219BMS8GE
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
P16-P18
P19-P21
P22-P24
P25-P27
P28-P28
Data Sheet
HMC219B
Rev.
0
| P
age
21
of
27
D
ata taken as upconv
erter
, uppe
r sideband, T
A
= 25°C,
IF = 100 MHz, and
LO drive level = 1
3
dB
m, unless otherwis
e noted.
Figure
71
.
Conversion
Gain vs. RF
Frequency
at Various
Temperatures
Figure
72
.
Input I
P3 vs. RF F
requency at Various
Temperatures
Figure
73
.
Conversion
Gain vs. RF
Frequency
at Various
LO Powers
Figure
74
.
Input I
P3 vs. RF F
requency at Various
LO Po
wers
0
–20
2.5
7.0
CONV
ERSI
ON G
AI
N (d
B)
RF F
REQ
UENCY (
GHz
)
–18
–16
–14
–12
–10
–8
–6
–4
–2
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
+85°
C
+25°
C
–40°C
15452-071
30
25
20
15
10
5
0
INP
UT I
P3 (d
Bm)
2.5
7.0
RF F
REQ
UENCY (
GHz
)
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
+85°
C
+25°
C
–40°C
15452-072
0
–20
2.5
7.0
CONV
ERSI
ON G
AI
N (d
B)
RF F
REQ
UENCY (
GHz
)
–18
–16
–14
–12
–10
–8
–6
–4
–2
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
9dBm
11dBm
13dBm
15dBm
17dBm
15452-073
30
25
20
15
10
5
0
INP
UT I
P3 (d
Bm)
2.5
7.0
RF F
REQ
UENCY (
GHz
)
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
9dBm
11dBm
13dBm
15dBm
17dBm
15452-074
HMC219B
Data Sheet
Rev.
0
| P
age
22
of
27
Data taken as
up
conver
t
er
,
uppe
r
sid
eband
, T
A
= 25°C, IF = 1000 MH
z, and
L
O drive level = 1
3
dBm, unless otherwise
noted.
Figure
75
.
Conversion
Gain vs. RF
Frequency
at Various
Temperatures
Figure
76
.
Input I
P3 vs. RF F
requency at Various
Temperatures
Figure
77
.
Conversion
Gain vs. RF
Frequency
at Various
LO Powers
Figure
78
.
Input I
P3 vs. RF F
requency at Various
LO P
owers
0
–20
2.5
7.0
CONV
ERSI
ON G
AI
N (d
B)
RF F
REQ
UENCY (
GHz
)
–18
–16
–14
–12
–10
–8
–6
–4
–2
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
+85°
C
+25°
C
–40°C
15452-075
30
25
20
15
10
5
0
INP
UT I
P3 (d
Bm)
2.5
7.0
RF F
REQ
UENCY (
GHz
)
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
+85°
C
+25°
C
–40°C
15452-076
0
–20
2.5
7.0
CONV
ERSI
ON G
AI
N (d
B)
RF F
REQ
UENCY (
GHz
)
–18
–16
–14
–12
–10
–8
–6
–4
–2
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
9dBm
11dBm
13dBm
15dBm
17dBm
15452-077
30
25
20
15
10
5
0
INP
UT I
P3 (d
Bm)
2.5
7.0
RF F
REQ
UENCY (
GHz
)
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
9dBm
11dBm
13dBm
15dBm
17dBm
15452-078
Data Sheet
HMC219B
Rev.
0
| P
age
23
of
27
Data taken as upconv
erter
, uppe
r side
band, T
A
= 25°C, IF = 2000 MH
z, and
L
O drive level = 1
3
dBm, unless otherwise
noted.
Figure
79
.
Conversion Gain vs. RF
Frequency at Vario
us Temperat
ures
Figure
80
.
Input I
P3 vs. RF F
requency at Various
Temperatures
Figure
81
.
Conversion
Gain vs. RF
Frequency
at Various
LO Powers
Figure
82
.
Input I
P3 vs. RF F
requency at Various
LO Po
wers
0
–20
2.5
7.0
CONV
ERSI
ON G
AI
N (d
B)
RF F
REQ
UENCY (
GHz
)
–18
–16
–14
–12
–10
–8
–6
–4
–2
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
+85°
C
+25°
C
–40°C
15452-079
30
25
20
15
10
5
0
INP
UT I
P3 (d
Bm)
2.5
7.0
RF F
REQ
UENCY (
GHz
)
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
+85°
C
+25°
C
–40°C
15452-080
0
–20
2.5
7.0
CONV
ERSI
ON G
AI
N (d
B)
RF F
REQ
UENCY (
GHz
)
–18
–16
–14
–12
–10
–8
–6
–4
–2
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
9dBm
11dBm
13dBm
15dBm
17dBm
15452-081
30
25
20
15
10
5
0
INP
UT I
P3 (d
Bm)
2.5
7.0
RF F
REQ
UENCY (
GHz
)
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
9dBm
11dBm
13dBm
15dBm
17dBm
15452-082
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
P16-P18
P19-P21
P22-P24
P25-P27
P28-P28
HMC219BMS8GE
Mfr. #:
Buy HMC219BMS8GE
Manufacturer:
Analog Devices Inc.
Description:
RF Mixer Mixer
Lifecycle:
New from this manufacturer.
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