SST25PF020B
DS20005135B-page 16 2013 Microchip Technology Inc.
4.5.13 WRITE-DISABLE (WRDI)
The Write-Disable (WRDI) instruction resets the Write-
Enable-Latch bit and AAI bit to 0 disabling any new
Write operations from occurring. The WRDI instruction
will not terminate any programming operation in prog-
ress. Any program operation in progress may continue
up to T
BP
after executing the WRDI instruction. CE#
must be driven high before the WRDI instruction is exe-
cuted.
FIGURE 4-17: WRITE DISABLE (WRDI) SEQUENCE
4.5.14 ENABLE-WRITE-STATUS-
REGISTER (EWSR)
The Enable-Write-Status-Register (EWSR) instruction
arms the Write-Status-Register (WRSR) instruction
and opens the status register for alteration. The Write-
Status-Register instruction must be executed immedi-
ately after the execution of the Enable-Write-Status-
Register instruction. This two-step instruction
sequence of the EWSR instruction followed by the
WRSR instruction works like SDP (software data pro-
tection) command structure which prevents any acci-
dental alteration of the status register values. CE# must
be driven low before the EWSR instruction is entered
and must be driven high before the EWSR instruction
is executed.
4.5.15 WRITE-STATUS-REGISTER (WRSR)
The Write-Status-Register instruction writes new val-
ues to the BP1, BP0, and BPL bits of the status register.
CE# must be driven low before the command
sequence of the WRSR instruction is entered and
driven high before the WRSR instruction is executed.
See Figure 4-18 for EWSR or WREN and WRSR for
byte-data input sequences.
Executing the Write-Status-Register instruction will be
ignored when WP# is low and BPL bit is set to “1”.
When the WP# is low, the BPL bit can only be set from
“0” to “1” to lock-down the status register, but cannot be
reset from “1” to “0”. When WP# is high, the lock-down
function of the BPL bit is disabled and the BPL, BP0,
and BP1 bits in the status register can all be changed.
As long as BPL bit is set to 0 or WP# pin is driven high
(V
IH
) prior to the low-to-high transition of the CE# pin at
the end of the WRSR instruction, the bits in the status
register can all be altered by the WRSR instruction. In
this case, a single WRSR instruction can set the BPL
bit to “1” to lock down the status register as well as
altering the BP0, BP1, and BP2 bits at the same time.
See Table 4-1 for a summary description of WP# and
BPL functions.
FIGURE 4-18: ENABLE-WRITE-STATUS-REGISTER (EWSR) OR WRITE-ENABLE (WREN) AND
WRITE-STATUS-REGISTER (WRSR) BYTE-DATA INPUT SEQUENCE
CE#
SO
SI
SCK
01234567
04
HIGH IMPEDANCE
MODE 0
MODE 3
25135 WRDI.0
MSB
25135 EWSR.0
MODE 3
HIGH IMPEDANCE
MODE 0
STATUS
REGISTER IN
76543210
MSBMSBMSB
01
MODE 3
SCK
SI
SO
CE#
MODE 0
50 or 06
0 1 2 3 4 5 6 7 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
2013 Microchip Technology Inc. DS20005135B-page 17
SST25PF020B
The Write-Status-Register instruction also writes new
values to the Status Register 1. To write values to Sta-
tus Register 1, the WRSR sequence needs a word-
data input—the first byte being the Status Register bits,
followed by the second byte Status Register 1 bits. CE#
must be driven low before the command sequence of
the WRSR instruction is entered and driven high before
the WRSR instruction is executed. See Figure 4-19 for
EWSR or WREN and WRSR instruction word-data
input sequences.
Executing the Write-Status-Register instruction will be
ignored when WP# is low and BPL bit is set to ‘1’. When
the WP# is low, the BPL bit can only be set from ‘0’ to
‘1’ to lock-down the status registers, but cannot be
reset from ‘1’ to ‘0’. When WP# is high, the lock-down
function of the BPL bit is disabled and the BPL, BP0,
BP1, TSP, and BSP bits in the status register can all be
changed. As long as BPL bit is set to 0 or WP# pin is
driven high (V
IH
) prior to the low-to-high transition of the
CE# pin at the end of the WRSR instruction, the bits in
the status register can all be altered by the WRSR
instruction. In this case, a single WRSR instruction can
set the BPL bit to “1” to lock down the status register as
well as altering the BPL, BP0, BP1, TSP, and BSP bits
at the same time. See Table 4-1 for a summary descrip-
tion of WP# and BPL functions.
FIGURE 4-19: ENABLE-WRITE-STATUS-REGISTER (EWSR) OR WRITE-ENABLE (WREN) AND
WRITE-STATUS-REGISTER (WRSR) WORD-DATA INPUT SEQUENCE
The WRSR instruction can either execute a byte-data
or a word-data input. Extra data/clock input, or within
byte-/word-data input, will not be executed. The reason
for the byte support is for backward compatibility to
products where WRSR instruction sequence is fol-
lowed by only a byte-data.
25135 EWSR1.0
MODE 3
HIGH IMPEDANCE
MODE 0
STATUS
REGISTER
76543210
MSBMSBMSB
01
MODE 3
SCK
SI
SO
CE#
MODE 0
50 or 06
01234567 0123456789101112131415
STATUS
REGISTER 1
76543210
MSB
16 17 18 19 20 21 22 23
SST25PF020B
DS20005135B-page 18 2013 Microchip Technology Inc.
4.5.16 JEDEC READ-ID
The JEDEC Read-ID instruction identifies the device as
SST25PF020B and the manufacturer as Microchip.
The device information can be read from executing the
8-bit command, 9FH. Following the JEDEC Read-ID
instruction, the 8-bit manufacturer’s ID, BFH, is output
from the device. After that, a 16-bit device ID is shifted
out on the SO pin. Byte 1, BFH, identifies the manufac-
turer as Microchip. Byte 2, 25H, identifies the memory
type as SPI Serial Flash. Byte 3, 8CH, identifies the
device as SST25PF020B. The instruction sequence is
shown in Figure 4-20. The JEDEC Read ID instruction
is terminated by a low to high transition on CE# at any
time during data output.
FIGURE 4-20: JEDEC READ-ID SEQUENCE
25 8C
25135 JEDECID.1
CE#
SO
SI
SCK
012345678
HIGH IMPEDANCE
15 1614 28 29 30 31
BF
MODE 3
MODE 0
MSBMSB
9 10111213 1718
9F
19 20 21 22 23 24 25 26 27
TABLE 4-6: JEDEC READ-ID DATA
Device ID
Manufacturer’s ID Memory Type Memory Capacity
Byte1 Byte 2 Byte 3
BFH 25H 8CH

SST25PF020B-80-4C-Q3AE-T

Mfr. #:
Manufacturer:
Microchip Technology
Description:
NOR Flash 2.3V to 3.6V 2Mbit SPI Serial Flash
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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