OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

SST25PF020B-80-4C-Q3AE-T

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24P25-P27P28-P30P31-P33
2013 Microchip Technology Inc. DS20005135B-page 19
SST25PF020B
4.5.17 READ-ID (RDID)
The Read-ID instruction (RDID) identifies the devices
as SST25PF020B and manufacturer as Microchip. The
device information can be read from executing an 8-bit
command, 90H or ABH, followed by address bits [A
23
-
A
0
]. Following the Read-ID instruction, the manufac-
turer’s ID is located in address 00000H and the device
ID is located in address 00001H. Once the device is in
Read-ID mode, the manufacturer’s and device ID out-
put data toggles between address 00000H and 00001H
until terminated by a low to high transition on CE#.
Refer to Tables 4-6 and 4-7 for device identification
data.
FIGURE 4-21: READ-ID SEQUENCE
25135 RdID.0
CE#
SO
SI
SCK
00
012345678
00 ADD
1
90 or AB
HIGH IMPEDANCE
15 16
23
24
31
32
39
40
47 48 55 56 63
BF
Device ID
BF
Device ID
Note: The manufacturer's and device ID output stream is continuous until terminated by a low to high transition on CE#.
Device ID = 8CH for SST25PF020B
1. 00H will output the manfacturer's ID first and 01H will output device ID first before toggling between the two.
HIGH
IMPEDANCE
MODE 3
MODE 0
MSB MSB
MSB
TABLE 4-7: PRODUCT IDENTIFICATION
Address Data
Manufacturer’s ID 00000H BFH
Device ID
SST25PF020B 00001H 8CH
SST25PF020B
DS20005135B-page 20 2013 Microchip Technology Inc.
5.0 ELECTRICAL SPECIFICATIONS
Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute Maxi-
mum Stress Ratings” may cause permanent damage to the device. This is a stress rating only and func-
tional operation of the device at these conditions or conditions greater than those defined in the operational
sections of this data sheet is not implied. Exposure to absolute maximum stress rating conditions may
affect device reliability.)
Temperature Under Bias. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55°C to +125°C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65°C to +150°C
D. C. Voltage on Any Pin to Ground Potential. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to V
DD
+0.5V
Transient Voltage (<20 ns) on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . -2.0V to V
DD
+2.0V
Package Power Dissipation Capability (T
A
= 25°C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W
Surface Mount Solder Reflow Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C for 10 seconds
Output Short Circuit Current
1
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
1. Output shorted for no more than one second. No more than one output shorted at a time.
TABLE 5-1: OPERATING RANGE
Range Ambient Temp V
DD
Commercial 0°C to +70°C 2.3-3.6V
TABLE 5-2: AC CONDITIONS OF TEST
1
1. See Figures 5-6 and 5-7
Input Rise/Fall Time Output Load
5ns C
L
= 30 pF
TABLE 5-3: DC OPERATING CHARACTERISTICS
Symbol Parameter
Limits
Test ConditionsMin Max Units
I
DDR
Read Current 12 mA CE#=0.1 V
DD
/0.9 V
DD
@33 MHz, SO=open
I
DDR3
Read Current 20 mA CE#=0.1 V
DD
/0.9 V
DD
@80 MHz, SO=open
I
DDW
Program and Erase Current 30 mA CE#=V
DD
I
SB
Standby Current 20 µA CE#=V
DD
, V
IN
=V
DD
or V
SS
I
LI
Input Leakage Current 1µAV
IN
=GND to V
DD
, V
DD
=V
DD
Max
I
LO
Output Leakage Current 1µAV
OUT
=GND to V
DD
, V
DD
=V
DD
Max
V
IL
Input Low Voltage 0.7 V V
DD
=V
DD
Min
V
IH
Input High Voltage 0.7 V
DD
V V
DD
=V
DD
Max
V
OL
Output Low Voltage 0.2 V I
OL
=100 µA, V
DD
=V
DD
Min
V
OL2
Output Low Voltage 0.4 V I
OL
=1.6 mA, V
DD
=V
DD
Min
V
OH
Output High Voltage V
DD
-0.2 V I
OH
=-100 µA, V
DD
=V
DD
Min
2013 Microchip Technology Inc. DS20005135B-page 21
SST25PF020B
TABLE 5-4: CAPACITANCE (T
A
= 25°C, F=1 MHZ, OTHER PINS OPEN)
Parameter Description Test Condition Maximum
C
OUT
1
Output Pin Capacitance V
OUT
= 0V 12 pF
C
IN
1
Input Capacitance V
IN
= 0V 6 pF
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
TABLE 5-5: RELIABILITY CHARACTERISTICS
Symbol Parameter Minimum Specification Units Test Method
N
END
1
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
Endurance 10,000 Cycles JEDEC Standard A117
T
DR
1
Data Retention 100 Years JEDEC Standard A103
I
LTH
1
Latch Up 100 + I
DD
mA JEDEC Standard 78
TABLE 5-6: AC OPERATING CHARACTERISTICS, 2.3-2.7V
Symbol Parameter
25 MHz 50 MHz
UnitsMinMaxMinMax
F
CLK
1
1. Maximum clock frequency for Read instruction, 03H, is 25 MHz
Serial Clock Frequency 25 50 MHz
T
SCKH
Serial Clock High Time 18 9 ns
T
SCKL
Serial Clock Low Time 18 9 ns
T
SCKR
Serial Clock Rise Time (Slew Rate) 0.1 0.1 V/ns
T
SCKF
Serial Clock Fall Time (Slew Rate) 0.1 0.1 V/ns
T
CES
2
2. Relative to SCK
CE# Active Setup Time 55ns
T
CEH
2
CE# Active Hold Time 55ns
T
CHS
2
CE# Not Active Setup Time 55ns
T
CHH
2
CE# Not Active Hold Time 55ns
T
CPH
CE# High Time 50 50 ns
T
CHZ
CE# High to High-Z Output 77ns
T
CLZ
SCK Low to Low-Z Output 00ns
T
DS
Data In Setup Time 22ns
T
DH
Data In Hold Time 44ns
T
HLS
HOLD# Low Setup Time 55ns
T
HHS
HOLD# High Setup Time 55ns
T
HLH
HOLD# Low Hold Time 55ns
T
HHH
HOLD# High Hold Time 55ns
T
HZ
HOLD# Low to High-Z Output 77ns
T
LZ
HOLD# High to Low-Z Output 77ns
T
OH
Output Hold from SCK Change 00ns
T
V
Output Valid from SCK 12 8 ns
T
SE
Sector-Erase 25 25 ms
T
BE
Block-Erase 25 25 ms
T
SCE
Chip-Erase 50 50 ms
T
BP
Byte-Program 10 10 µs
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24P25-P27P28-P30P31-P33

SST25PF020B-80-4C-Q3AE-T

Mfr. #:
Buy SST25PF020B-80-4C-Q3AE-T
Manufacturer:
Microchip Technology
Description:
NOR Flash 2.3V to 3.6V 2Mbit SPI Serial Flash
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet