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SST25VF040B-80-4I-QAE-T

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24P25-P27P28-P30P31-P33P34-P34
©2011 Silicon Storage Technology, Inc. DS25051A 09/11
22
4 Mbit SPI Serial Flash
SST25VF040B
Data Sheet
A
Microchip Technology Company
Electrical Specifications
Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute
Maximum Stress Ratings” may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these conditions or conditions greater than those defined in the
operational sections of this data sheet is not implied. Exposure to absolute maximum stress rating con-
ditions may affect device reliability.)
Temperature Under Bias .............................................. -55°C to +125°C
Storage Temperature................................................. -65°C to +150°C
D. C. Voltage on Any Pin to Ground Potential .............................-0.5V to V
DD
+0.5V
Transient Voltage (<20 ns) on Any Pin to Ground Potential ..................-2.0V to V
DD
+2.0V
Package Power Dissipation Capability (T
A
= 25°C)................................... 1.0W
Surface Mount Solder Reflow Temperature ...........................260°C for 10 seconds
Output Short Circuit Current
1
................................................... 50mA
1. Output shorted for no more than one second. No more than one output shorted at a time.
Table 8: Operating Range
Range Ambient Temp V
DD
Commercial 0°C to +70°C 2.7-3.6V
Industrial -40°C to +85°C 2.7-3.6V
T8.1 25051
Table 9: AC Conditions of Test
1
1. See Figures 26 and 27
Input Rise/Fall Time Output Load
5ns C
L
=30pF
T9.1 25051
Table 10:DC Operating Characteristics (25VF040B-50-xx-xxxF)
Symbol Parameter
Limits
Test ConditionsMin Max Units
I
DDR
Read Current 10 mA CE#=0.1 V
DD
/0.9 V
DD
@25 MHz, SO=open
I
DDR2
Read Current 15 mA CE#=0.1 V
DD
/0.9 V
DD
@50 MHz, SO=open
I
DDW
Program and Erase Current 30 mA CE#=V
DD
I
SB
Standby Current 20 µA CE#=V
DD
,V
IN
=V
DD
or V
SS
I
LI
Input Leakage Current 1 µA V
IN
=GND to V
DD
,V
DD
=V
DD
Max
I
LO
Output Leakage Current 1 µA V
OUT
=GND to V
DD
,V
DD
=V
DD
Max
V
IL
Input Low Voltage 0.8 V V
DD
=V
DD
Min
V
IH
Input High Voltage 0.7 V
DD
VV
DD
=V
DD
Max
V
OL
Output Low Voltage 0.2 V I
OL
=100 µA, V
DD
=V
DD
Min
V
OL2
Output Low Voltage 0.4 V I
OL
=1.6 mA, V
DD
=V
DD
Min
V
OH
Output High Voltage V
DD
-0.2 V I
OH
=-100 µA, V
DD
=V
DD
Min
T10.0 25051
©2011 Silicon Storage Technology, Inc. DS25051A 09/11
23
4 Mbit SPI Serial Flash
SST25VF040B
Data Sheet
A
Microchip Technology Company
Table 11:DC Operating Characteristics (25VF040B-80-xx-xxxE)
Symbol Parameter
Limits
Test ConditionsMin Max Units
I
DDR
Read Current 12 mA CE#=0.1 V
DD
/0.9 V
DD
@33 MHz, SO=open
I
DDR3
Read Current 20 mA CE#=0.1 V
DD
/0.9 V
DD
@80 MHz, SO=open
I
DDW
Program and Erase Current 30 mA CE#=V
DD
I
SB
Standby Current 20 µA CE#=V
DD
,V
IN
=V
DD
or V
SS
I
LI
Input Leakage Current 1 µA V
IN
=GND to V
DD
,V
DD
=V
DD
Max
I
LO
Output Leakage Current 1 µA V
OUT
=GND to V
DD
,V
DD
=V
DD
Max
V
IL
Input Low Voltage 0.8 V V
DD
=V
DD
Min
V
IH
Input High Voltage 0.7 V
DD
VV
DD
=V
DD
Max
V
OL
Output Low Voltage 0.2 V I
OL
=100 µA, V
DD
=V
DD
Min
V
OL2
Output Low Voltage 0.4 V I
OL
=1.6 mA, V
DD
=V
DD
Min
V
OH
Output High Voltage V
DD
-0.2 V I
OH
=-100 µA, V
DD
=V
DD
Min
T11.0 25051
Table 12:Capacitance (T
A
= 25°C, f=1 Mhz, other pins open)
Parameter Description Test Condition Maximum
C
OUT
1
1. This parameter is measured only for initial qualification and after a design or process change that could affect this
parameter.
Output Pin Capacitance V
OUT
=0V 12pF
C
IN
1
Input Capacitance V
IN
=0V 6pF
T12.0 25051
Table 13:Reliability Characteristics
Symbol Parameter Minimum Specification Units Test Method
N
END
1
1. This parameter is measured only for initial qualification and after a design or process change that could affect this
parameter.
Endurance 10,000 Cycles JEDEC Standard A117
T
DR
1
Data Retention 100 Years JEDEC Standard A103
I
LTH
1
Latch Up 100 + I
DD
mA JEDEC Standard 78
T13.0 25051
©2011 Silicon Storage Technology, Inc. DS25051A 09/11
24
4 Mbit SPI Serial Flash
SST25VF040B
Data Sheet
A
Microchip Technology Company
Table 14:AC Operating Characteristics (25VF040B-50-xx-xxxF)
25 MHz 50 MHz
Symbol Parameter Min Max Min Max
F
CLK
1
Serial Clock Frequency 25 50
T
SCKH
Serial Clock High Time 18 9
T
SCKL
Serial Clock Low Time 18 9
T
SCKR
2
Serial Clock Rise Time (Slew Rate) 0.1 0.1
T
SCKF
Serial Clock Fall Time (Slew Rate) 0.1 0.1
T
CES
3
CE# Active Setup Time 5 5
T
CEH
3
CE# Active Hold Time 5 5
T
CHS
3
CE# Not Active Setup Time 5 5
T
CHH
3
CE# Not Active Hold Time 5 5
T
CPH
CE# High Time 50 50
T
CHZ
CE# High to High-Z Output 15 8
T
CLZ
SCK Low to Low-Z Output 0 0
T
DS
Data In Setup Time 2 2
T
DH
Data In Hold Time 5 5
T
HLS
HOLD# Low Setup Time 5 5
T
HHS
HOLD# High Setup Time 5 5
T
HLH
HOLD# Low Hold Time 5 5
T
HHH
HOLD# High Hold Time 5 5
T
HZ
HOLD# Low to High-Z Output 8 8
T
LZ
HOLD# High to Low-Z Output 12 8
T
OH
Output Hold from SCK Change 0 0
T
V
Output Valid from SCK 8 8
T
SE
Sector-Erase 25 25
T
BE
Block-Erase 25 25
T
SCE
Chip-Erase 50 50
T
BP
Byte-Program 10 10
T14.0 25051
1. Maximum clock frequency for Read Instruction, 03H, is 25 MHz
2. Maximum Rise and Fall time may be limited by T
SCKH
and T
SCKL
requirements
3. Relative to SCK.
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24P25-P27P28-P30P31-P33P34-P34

SST25VF040B-80-4I-QAE-T

Mfr. #:
Buy SST25VF040B-80-4I-QAE-T
Manufacturer:
Microchip Technology
Description:
NOR Flash 2.7V to 3.6V 4Mbit SPI Serial Flash
Lifecycle:
New from this manufacturer.
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