CY62128EV30 MoBL
®
Automotive
1-Mbit (128 K × 8) Static RAM
Cypress Semiconductor Corporation • 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600
Document Number: 001-65528 Rev. *E Revised April 15, 2015
1-Mbit (128 K × 8) Static RAM
Features
■ Very high-speed: 45 ns
■ Temperature ranges:
❐ Automotive-A: –40 °C to +85 °C
❐ Automotive-E: –40 °C to +125 °C
■ Wide voltage range: 2.2 V to 3.6 V
■ Pin compatible with CY62128DV30
■ Ultra low standby power
❐ Typical standby current: 1 A
❐ Maximum standby current: 4 A
■ Ultra low active power
❐ Typical active current: 1.3 mA at f = 1 MHz
■ Easy memory expansion with CE
1
, CE
2,
and OE features
■ Automatic power down when deselected
■ Complementary metal oxide semiconductor (CMOS) for
optimum speed and power
■ Offered in Pb-free 32-pin small outline integrated circuit (SOIC),
32-pin thin small outline package (TSOP) Type I, and 32-pin
STSOP packages
Functional Description
The CY62128EV30 is a high performance CMOS static RAM
module organized as 128K words by 8 bits. This device features
advanced circuit design to provide ultra low active current. This
is ideal for providing More Battery Life™ (MoBL
®
) in portable
applications such as cellular telephones. The device also has an
automatic power-down feature that significantly reduces power
consumption when addresses are not toggling. Placing the
device in standby mode reduces power consumption by more
than 99 percent when deselected (CE
1
HIGH or CE
2
LOW). The
eight input and output pins (I/O
0
through I/O
7
) are placed in a
high-impedance state when the device is deselected (CE
1
HIGH
or CE
2
LOW), the outputs are disabled (OE HIGH), or a write
operation is in progress (CE
1
LOW and CE
2
HIGH and WE
LOW).
To write to the device, take Chip Enable (CE
1
LOW and CE
2
HIGH) and Write Enable (WE) inputs LOW. Data on the eight I/O
pins is then written into the location specified on the Address pin
(A
0
through A
16
).
To read from the device, take Chip Enable (CE
1
LOW and CE
2
HIGH) and Output Enable (OE) LOW while forcing Write Enable
(WE
) HIGH. Under these conditions, the contents of the memory
location specified by the address pins appear on the I/O pins.
For a complete list of related resources, click here.
A
0
I/O
0
I/O
7
I/O
1
I/O
2
I/O
3
I/O
4
I/O
5
I/O
6
A
1
A
2
A
3
A
4
A
5
A
6
A
7
A
8
A
9
A
12
SENSE AMPS
POWER
DOWN
WE
OE
A
13
A
14
A
15
A
16
ROW DECODER
COLUMN DECODER
128K x 8
ARRAY
INPUT BUFFER
A
10
A
11
CE
1
CE
2