CY62128EV30 MoBL
®
Automotive
Document Number: 001-65528 Rev. *E Page 7 of 19
Data Retention Characteristics
Over the Operating Range
Parameter Description Conditions Min Typ
[9]
Max Unit
V
DR
V
CC
for data retention 1.5 V
I
CCDR
[10]
Data retention current V
CC
= 1.5 V,
CE
1
> V
CC
 0.2 V or
CE
2
< 0.2 V,
V
IN
> V
CC
0.2 V or
V
IN
< 0.2 V
Automotive-A 3 A
Automotive-E 30 A
t
CDR
[11]
Chip deselect to data
retention time
0––ns
t
R
[12]
Operation recovery time CY62128EV30LL-45 45 ns
CY62128EV30LL-55 55
Data Retention Waveform
Figure 5. Data Retention Waveform
[13]
V
CC(min)
V
CC(min)
t
CDR
V
DR
> 1.5V
DATA RETENTION MODE
t
R
V
CC
CE
Notes
9. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V
CC
= V
CC(typ)
, T
A
= 25 °C.
10. Chip enables (CE
1
and CE
2
) must be at CMOS level to meet the I
SB1
/ I
SB2
/ I
CCDR
spec. Other inputs can be left floating.
11. Tested initially and after any design or process changes that may affect these parameters.
12. Full device AC operation requires linear V
CC
ramp from V
DR
to V
CC(min)
> 100 s or stable at V
CC(min)
100 s.
13. CE
is the logical combination of CE
1
and CE
2
. When CE
1
is LOW and CE
2
is HIGH, CE is LOW; when CE
1
is HIGH or CE
2
is LOW, CE is HIGH.
CY62128EV30 MoBL
®
Automotive
Document Number: 001-65528 Rev. *E Page 8 of 19
Switching Characteristics
Over the Operating Range
Parameter
[14, 15]
Description
45 ns (Automotive-A) 55 ns (Automotive-E)
Unit
Min Max Min Max
Read Cycle
t
RC
Read cycle time 45 55 ns
t
AA
Address to data valid 45 55 ns
t
OHA
Data hold from address change 10 10 ns
t
ACE
CE LOW to data valid 45 55 ns
t
DOE
OE LOW to data valid 22 25 ns
t
LZOE
OE LOW to Low Z
[16]
5 5 ns
t
HZOE
OE HIGH to High Z
[16, 17]
18 20 ns
t
LZCE
CE
LOW to Low Z
[16]
10
10
ns
t
HZCE
CE HIGH to High Z
[16, 17]
18 20 ns
t
PU
CE LOW to Power-up
0
0
ns
t
PD
CE HIGH to Power-down 45 55 ns
Write Cycle
[18, 19]
t
WC
Write cycle time 45 55 ns
t
SCE
CE LOW to write end 35 40 ns
t
AW
Address setup to write end 35 40 ns
t
HA
Address hold from write end 0 0 ns
t
SA
Address setup to write start 0 0 ns
t
PWE
WE pulse width
35
40
ns
t
SD
Data setup to write end 25 25 ns
t
HD
Data Hold from write end 0 0 ns
t
HZWE
WE LOW to High Z
[16, 17]
18 20 ns
t
LZWE
WE HIGH to Low Z
[16]
10 10 ns
Notes
14. CE
is the logical combination of CE
1
and CE
2
. When CE
1
is LOW and CE
2
is HIGH, CE is LOW; when CE
1
is HIGH or CE
2
is LOW, CE is HIGH.
15. Test Conditions for all parameters other than tri-state parameters assume signal transition time of 3 ns or less (1 V/ns), timing reference levels of V
CC(typ)
/2, input pulse
levels of 0 to V
CC(typ)
, and output loading of the specified I
OL
/I
OH
as shown in the Figure 4 on page 6.
16. At any given temperature and voltage condition, t
HZCE
is less than t
LZCE
, t
HZOE
is less than t
LZOE
, and t
HZWE
is less than t
LZWE
for any given device.
17. t
HZOE
, t
HZCE
, and t
HZWE
transitions are measured when the output enter a high impedance state.
18. The internal write time of the memory is defined by the overlap of WE
, CE = V
IL
. All signals must be ACTIVE to initiate a write and any of these signals can terminate
a write by going INACTIVE. The data input setup and hold timing should be referenced to the edge of the signal that terminates the write.
19. The minimum write pulse width for Write Cycle No. 3 (WE
Controlled, OE LOW) should be equal to the sum of t
SD
and t
HZWE
.
CY62128EV30 MoBL
®
Automotive
Document Number: 001-65528 Rev. *E Page 9 of 19
Switching Waveforms
Figure 6. Read Cycle No. 1 (Address Transition Controlled)
[20, 21]
Figure 7. Read Cycle No. 2 (OE Controlled)
[21, 22, 23]
Previous Data Valid DATA
OUT
VALID
RC
t
AA
t
OHA
tRC
Address
DATA I/O
50%
50%
DATA
OUT
VALID
t
RC
t
ACE
t
DOE
t
LZOE
t
LZCE
t
PU
High Impedance
t
HZOE
t
HZCE
t
PD
Impedance
I
CC
I
SB
High
Address
CE
DATA I/O
V
CC
Supply
Current
OE
Notes
20. The device is continuously selected. OE
, CE
1
= V
IL
, CE
2
= V
IH
.
21. WE
is HIGH for read cycle.
22. CE
is the logical combination of CE
1
and CE
2
. When CE
1
is LOW and CE
2
is HIGH, CE is LOW; when CE
1
is HIGH or CE
2
is LOW, CE is HIGH.
23. Address valid before or similar to CE
1
transition LOW and CE
2
transition HIGH.

CY62128EV30LL-45ZAXA

Mfr. #:
Manufacturer:
Cypress Semiconductor
Description:
SRAM 1Mb 3V 45ns 128K x 8 LP SRAM
Lifecycle:
New from this manufacturer.
Delivery:
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