CY62128EV30 MoBL
®
Automotive
Document Number: 001-65528 Rev. *E Page 5 of 19
Maximum Ratings
Exceeding maximum ratings may shorten the useful life of the
device. User guidelines are not tested.
Storage temperature ................................ –65 °C to +150 °C
Ambient temperature with
power applied .......................................... –55 °C to +125 °C
Supply voltage
to ground potential
[3, 4]
................–0.3 V to V
CC(max)
+ 0.3 V
DC voltage applied to outputs
in High Z state
[3, 4]
......................–0.3 V to V
CC(max)
+ 0.3 V
DC input voltage
[3, 4]
...................–0.3 V to V
CC(max)
+ 0.3 V
Output current into outputs (LOW) .............................20 mA
Static discharge voltage
(MIL-STD-883, Method 3015) ................................ > 2001 V
Latch up current .....................................................> 200 mA
Operating Range
Device Range
Ambient
Temperature
V
CC
[5]
CY62128EV30LL Automotive-A –40 °C to +85 °C 2.2 V to
3.6 V
Automotive-E –40 °C to +125 °C
Electrical Characteristics
Over the Operating Range
Parameter Description Test Conditions
45 ns (Auto-A) 55 ns (Auto-E)
Unit
Min Typ
[6]
Max Min Typ
[6]
Max
V
OH
Output HIGH voltage I
OH
= –0.1 mA, V
CC
< 2.70 V 2.0 – – 2.0 – – V
I
OH
= –1.0 mA, V
CC
> 2.70 V 2.4 – – 2.4 – – V
V
OL
Output LOW voltage I
OL
= 0.1 mA – – 0.4 – – 0.4 V
I
OL
= 2.1 mA, V
CC
> 2.70 V – – 0.4 – – 0.4 V
V
IH
Input HIGH voltage V
CC
= 2.2 V to 2.7 V 1.8 – V
CC
+ 0.3 V 1.8 – V
CC
+ 0.3 V V
V
CC
= 2.7 V to 3.6 V 2.2 – V
CC
+ 0.3 V 2.2 – V
CC
+ 0.3 V V
V
IL
Input LOW voltage V
CC
= 2.2 V to 2.7 V –0.3 – 0.6 –0.3 – 0.6 V
V
CC
= 2.7 V to 3.6 V –0.3 – 0.8 –0.3 – 0.8 V
I
IX
Input leakage current GND < V
IN
< V
CC
–1 – +1 –4 – +4 A
I
OZ
Output leakage current GND < V
O
< V
CC
, output disabled –1 – +1 –4 – +4 A
I
CC
V
CC
operating supply
current
f = f
max
= 1/t
RC
V
CC
= V
CCmax
I
OUT
= 0 mA
CMOS levels
–11 16 –11 35 mA
f = 1 MHz – 1.3 2.0 – 1.3 4.0 mA
I
SB1
[7]
Automatic CE
power-down
current — CMOS inputs
CE
1
> V
CC
0.2 V, CE
2
< 0.2 V,
V
IN
> V
CC
– 0.2 V, V
IN
< 0.2 V,
f = f
max
(address and data only),
f = 0 (OE
and WE), V
CC
= 3.60 V
–1 4–135A
I
SB2
[7]
Automatic CE
power-down
current — CMOS inputs
CE
1
> V
CC
– 0.2 V, CE
2
< 0.2 V,
V
IN
> V
CC
– 0.2 V or V
IN
< 0.2 V,
f = 0, V
CC
= 3.60 V
–1 4–130A
Notes
3. V
IL(min)
= –2.0 V for pulse durations less than 20 ns.
4. V
IH(max)
= V
CC
+ 0.75 V for pulse durations less than 20 ns.
5. Full device AC operation assumes a 100 s ramp time from 0 to V
CC(min)
and 200 s wait time after V
CC
stabilization.
6. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V
CC
= V
CC(typ)
, T
A
= 25 °C.
7. Chip enables (CE
1
and CE
2
) must be at CMOS level to meet the I
SB1
/ I
SB2
/ I
CCDR
spec. Other inputs can be left floating.
