MAX2900–MAX2904
200mW Single-Chip Transmitter ICs for
868MHz/915MHz ISM Bands
4
Maxim Integrated
AC ELECTRICAL CHARACTERISTICS
(MAX290_ EV kits. V
CC
= +2.7V to +4.5V, R
RLPF
= 68kΩ, R
PWRSET
= 22kΩ, f
RF
= 917.28MHz (MAX2900/MAX2901/MAX2902) or f
RF
= 868MHz (MAX2903/MAX2904), VASK = VREG, f
REF
= 14.56MHz (MAX2900/MAX2901/MAX2902) or f
REF
= 13.62MHz
(MAX2903/MAX2904), chip rate on MODIN = 1.22Mbps, P
OUT
= +23dBm, T
A
= -40°C to +85°C. Typical values are at V
CC
= +4.5V,
T
A
= +25°C, unless otherwise noted.) (Note 1)
PARAMETER CONDITIONS MIN -3σ TYP +3σ MAX U N I T S
ANALOG INPUT PINS
VTUNE Input Capacitance VTUNE = +1.35V 15 p F
DIGITAL INPUT PINS
Digital Input Pin Capacitance 3 p F
VCO AND SYNTHESIZERS SECTION
(MAX2900/MAX2901/MAX2902) 902 917.28 928
RFOUT Frequency Range
(MAX2903/MAX2904) 867 868 870
M H z
(MAX2900/MAX2901/MAX2902) 14 14.56 15
REFIN Reference Frequency
Range
(MAX2903/MAX2904) 13 13.78 14.5
M H z
REFDIV Fixed Reference Divider
Ratio
(MAX2900) 4 4 4
Table 4 (MAX2900) 249 256
Main Divider Ratios
(MAX2901/MAX2903) 62 63
(MAX2900) 3.5 3.64 3.75
PLL Comparison Frequency
(MAX2901/MAX2903) 13 15
M H z
VCO Buffer Output Power 300Ω d i ffer enti al l oad ( M AX 2901–M AX 2904) -12 d Bm
REFDIV Fixed Reference
Divider Ratio
(MAX2901/MAX2903) 1 1 1
VCO Phase Noise
At 100kHz offset, measured at RFOUT,
PLL loop BW = 5kHz
-101 d Bc/H z
(MAX2900/MAX2901/MAX2902) 44 65 86
VCO Tuning Gain
(MAX2903/MAX2904) 85
M H z/V
5kH z RM S
VCO Frequency Pulling with
OOK Modulation
OOKIN clocked at 19kHz, internal (crystal)
or external reference frequency 60 kH z p eak
PLL Phase Noise
Measured at RFOUT, 5kHz offset,
PLL loop BW = 50kHz
-96 d Bc/H z
REFOUT Voltage Swing 100 m V p - p
CPOUT Charge Pump Current 500 µA
Reference Spurs -62 d Bc
Reference Input Voltage for
Nominal Operation
Using an external frequency reference 200 300 m V
BPSK, OOK MODULATOR, AND PA
MODIN Frequency Range 1.2 8 M b /s
Modulation Filter Nominal 3dB
Bandwidth
1M H z
Modulation Filter Final Attenuation Measured at 30MHz 28 41 d B
Carrier Suppression 28 d B
Noise Power Density
At 960MHz (measured at RFOUT at
+23dBm output power)
-150 d Bc/H z