LE25S40MB
www.onsemi.com
16
Specifications
Absolute Maximum Ratings
Parameter Symbol Conditions Ratings unit
Maximum supply voltage V
DD
max With respect to V
SS
0.5 to +2.4 V
DC voltage (all pins) VIN/VOUT With respect to V
SS
0.5 to V
DD
+0.5 V
Storage temperature Tstg 55 to +150 C
Operating Conditions
Parameter Symbol Conditions Ratings unit
Operating supply voltage V
DD
1.65 to 1.95 V
Operating ambient temperature Topr 40 to +85 C
Allowable DC Operating Conditions
Parameter Symbol Conditions
Ratings
unit
min typ max
Read mode operating current I
CCR
SCK = 0.1V
DD
/ 0.9V
DD
,
HOLD
=
WP
= 0.9V
DD
,
SO = open, 25 MHz
6 mA
SCK = 0.1V
DD
/ 0.9V
DD
,
HOLD
=
WP
= 0.9V
DD
,
SO = open, 40 MHz
8 mA
Write mode operating current
(erase+page program)
I
CCW
t
SSE
= t
SE
= t
CHE
= typ., t
PP
= max
15 mA
CMOS standby current I
SB
CS
= V
DD
,
HOLD
=
WP
= V
DD
,
SI = V
SS
/ V
DD
,
SO = open
50 A
Power-down standby current I
DSB
CS
= V
DD
,
HOLD
=
WP
= V
DD
,
SI = V
SS
/ V
DD
,
SO = open
10 A
Input leakage current I
LI
2 A
Output leakage current I
LO
2 A
Input low voltage V
IL
0.3 0.3V
DD
V
Input high voltage V
IH
0.7V
DD
V
DD
+0.3 V
Output low voltage V
OL
I
OL
= 100 A, V
DD
= V
DD
min
0.2
V
I
OL
= 1.6 mA, V
DD
= V
DD
min
0.4
Output high voltage V
OH
I
OH
= 100 A, V
DD
= V
DD
min
V
CC
0.2 V
Data hold, Rewriting frequency
Parameter condition min max unit
Rewriting frequency
Program / Erase 100,000 times/
Sector
Status resister write 1,000
Data hold 20 year
Pin Capacitance at Ta = 25C, f = 1 MHz
Parameter Symbol Conditions
Ratings
unit
max
Output pin capacitance C
SO
V
SO
= 0 V
12 pF
Input pin Capacitance C
IN
V
IN
= 0 V
6 pF
Note : These parameter values do not represent the results of measurements undertaken for all devices but rather values for some of
the sampled devices.
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended
Operating Ranges limits may affect device reliability.
