CY8C9520A
CY8C9540A
CY8C9560A
Document Number: 38-12036 Rev. *I Page 17 of 32
DC Electrical Characteristics
DC Chip-Level Specifications
Table 18 lists guaranteed maximum and minimum specifications for the voltage and temperature ranges: 4.75 V to 5.25 V and
–40 °C T
A
85°C, or 3.0 V to 3.6 V and –40 °C T
A
85°C, respectively. Typical parameters apply to 5 V and 3.3 V at 25 °C and
are for design guidance only.
DC Programming Specifications
The following table lists guaranteed maximum and minimum specifications for the voltage and temperature ranges: 4.75 V to 5.25 V
and –40 °C T
A
85°C, or 3.0 V to 3.6 V and –40 °C T
A
85°C, respectively. Typical parameters apply to 5 V and 3.3 V at 25 °C
and are for design guidance only.
DC I
2
C Specifications
Table 22 lists guaranteed maximum and minimum specifications for the voltage and temperature ranges: 4.75 V to 5.25 V and
–40 °C T
A
85°C, or 3.0 V to 3.6 V and –40 °C T
A
85°C, respectively. Typical parameters apply to 5 V and 3.3 V at 25 °C and
are for design guidance only.
Table 18. CY8C9520A DC Chip-Level Specifications
Symbol Description Min Typ Max Units Notes
Vdd Supply voltage 3.00 – 5.25 V
I
DD
Supply current Vdd 5 V – 3.8 5 mA Conditions are 5.0 V, T
A
= 25 C, I
OH
= 0.
I
DD3
Supply current Vdd 3.3 V – 2.3 3 mA Conditions are 3.3 V, T
A
= 25 C, I
OH
= 0.
Table 19. CY8C9540A DC Chip-Level Specifications
Symbol Description Min Typ Max Units Notes
Vdd Supply voltage 3.00 – 5.25 V
I
DD
Supply current Vdd 5 V – 6 9 mA Conditions are 5.0 V, T
A
= 25 C, I
OH
= 0.
I
DD3
Supply current Vdd 3.3 V – 3.3 6 mA Conditions are 3.3 V, T
A
= 25 C, I
OH
= 0.
Table 20. CY8C9560A DC Chip-Level Specifications
Symbol Description Min Typ Max Units Notes
Vdd Supply voltage 3.00 – 5.25 V
I
DD
Supply current Vdd 5 V – 15 25 mA Conditions are 5.0 V, T
A
= 25 C, I
OH
= 0.
I
DD3
Supply current Vdd 3.3 V – 5 9 mA Conditions are 3.3 V, T
A
= 25 C, I
OH
= 0.
Table 21. DC Programming Specifications
Symbol Description Min Typ Max Units Notes
Flash
ENPB
Flash (EEPROM) endurance (by block) 10,000 – – – Erase/write cycles by block.
Flash
ENT
Flash endurance (total)
[3]
1,800,000 – – – Erase/write cycles.
Flash
DR
Flash data retention 10 – – Years
Table 22. DC I
2
C Specifications
[4]
Symbol Description Min Typ Max Units Notes
V
ILI2C
Input low level – – 0.3 × V
DD
V 3.0 V V
DD
3.6 V
– – 0.25 × V
DD
V4.75 V V
DD
5.25 V
V
IHI2C
Input high level 0.7 × V
DD
– – V 3.0 V V
DD
5.25 V
Note
3. A maximum of 180 x 10,000 block endurance cycles is allowed. This may be balanced between operations on 180x1 blocks of 10,000 maximum cycles each, 180x2
blocks of 5,000 maximum cycles each, or 180x4 blocks of 2,500 maximum cycles each (to limit the total number of cycles to 180x10,000 and that no single block
ever sees more than 10,000 cycles).
4. All GPIO meet the DC GPIO VIL and VIH specifications found in the DC GPIO Specifications sections. The I
2
C GPIO pins also meet the above specs.
