PSMN1R2-30YLC,115 Datasheet PSMN1R2-30YLC,115 | P1-P3

Important notice

Dear Customer,

On 7 February 2017 the former NXP Standard Product business became a new company with the

tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS

semiconductors with its focus on the automotive, industrial, computing, consumer and wearable

application markets

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use http://www.nexperia.com

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Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on

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1. Product profile

1.1 General description

Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is

designed and qualified for use in a wide range of industrial, communications and domestic

equipment.

1.2 Features and benefits

 High reliability Power SO8 package,

qualified to 175°C

 Optimised for 4.5V Gate drive utilising

NextPower Superjunction technology

 Ultra low QG, QGD, and QOSS for

high system efficiencies at low and

high loads

 Ultra low Rdson and low parasitic

inductance

1.3 Applications

 DC-to-DC converters

 Lithium-ion battery protection

 Load switching

 Power OR-ing

 Server power supplies

 Sync rectifier

1.4 Quick reference data

PSMN1R2-30YLC

N-channel 30 V 1.25mΩ logic level MOSFET in LFPAK using

NextPower technology

Rev. 1 — 3 May 2011 Product data sheet

LFPAK

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

drain-source voltage 25 °C ≤ T

≤ 175°C --30V

drain current T

=25°C; V

=10V;

see Figure 1

[1]

--100A

tot

total power dissipation T

=25°C; see Figure 2 --215W

junction temperature -55 - 175 °C

Static characteristics

DSon

drain-source on-state

resistance

=4.5V; I

=25A;

=25°C;

see Figure 12

- 1.35 1.65 mΩ

=10V; I

=25A;

=25°C;

see Figure 12

- 1.05 1.25 mΩ

Product data sheet Rev. 1 — 3 May 2011 2 of 15

NXP Semiconductors

PSMN1R2-30YLC

N-channel 30 V 1.25mΩ logic level MOSFET in LFPAK using NextPower

[1] Continuous current is limited by package.

2. Pinning information

3. Ordering information

4. Marking

[1] % = placeholder for manufacturing site code

Dynamic characteristics

gate-drain charge V

=4.5V; I

=25A;

=15V; see Figure 14;

see Figure 15

-11.6-nC

G(tot)

total gate charge V

=4.5V; I

=25A;

=15V; see Figure 14;

see Figure 15

-38-nC

Table 1. Quick reference data

…continued

Symbol Parameter Conditions Min Typ Max Unit

Table 2. Pinning information

Pin Symbol Description Simplified outline Graphic symbol

1Ssource

SOT669 (LFPAK;

Power-SO8)

2Ssource

3Ssource

4 G gate

mb D mounting base;

connected to drain

1234

bb076

Table 3. Ordering information

Type number Package

Name Description Version

PSMN1R2-30YLC LFPAK;

Power-SO8

plastic single-ended surface-mounted package; 4 leads SOT669

Table 4. Marking codes

Type number Marking code

[1]

PSMN1R2-30YLC 1C230L

P1-P3 P4-P6 P7-P9 P10-P12 P13-P15 P16-P16

PSMN1R2-30YLC,115

Mfr. #:

Buy PSMN1R2-30YLC,115

Manufacturer:

Nexperia

Description:

MOSFET N-Ch 30V 1.25mOhms

Lifecycle:

New from this manufacturer.

Delivery:

DHL FedEx Ups TNT EMS

Payment:

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PSMN1R2-30YLC,115