PSMN1R2-30YLC All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 1 — 3 May 2011 3 of 15
NXP Semiconductors
PSMN1R2-30YLC
N-channel 30 V 1.25mΩ logic level MOSFET in LFPAK using NextPower
5. Limiting values
[1] Continuous current is limited by package.
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DS
drain-source voltage 25 °C ≤ T
j
≤ 175 °C - 30 V
V
DGR
drain-gate voltage 25 °C ≤ T
j
≤ 175 °C; R
GS
=20kΩ -30V
V
GS
gate-source voltage -20 20 V
I
D
drain current V
GS
=10V; T
mb
=25°C; see Figure 1
[1]
- 100 A
V
GS
=10V; T
mb
= 100 °C; see Figure 1
[1]
- 100 A
I
DM
peak drain current pulsed; t
p
≤ 10 µs; T
mb
=25°C;
see Figure 4
- 1237 A
P
tot
total power dissipation T
mb
=25°C; see Figure 2 - 215 W
T
stg
storage temperature -55 175 °C
T
j
junction temperature -55 175 °C
T
sld(M)
peak soldering temperature - 260 °C
V
ESD
electrostatic discharge voltage MM (JEDEC JESD22-A115) 900 - V
Source-drain diode
I
S
source current T
mb
=25°C
[1]
- 100 A
I
SM
peak source current pulsed; t
p
≤ 10 µs; T
mb
= 25 °C - 1237 A
Avalanche ruggedness
E
DS(AL)S
non-repetitive drain-source
avalanche energy
V
GS
=10V; T
j(init)
=25°C; I
D
= 100 A;
V
sup
≤ 30 V; R
GS
=50Ω; unclamped;
see Figure 3
- 209 mJ
