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PSMN1R2-30YLC,115

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
PSMN1R2-30YLC All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 1 — 3 May 2011 6 of 15
NXP Semiconductors
PSMN1R2-30YLC
N-channel 30 V 1.25mΩ logic level MOSFET in LFPAK using NextPower
7. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V
(BR)DSS
drain-source
breakdown voltage
I
D
=250µA; V
GS
=0V; T
j
=25°C 30--V
I
D
=250µA; V
GS
=0V; T
j
= -55 °C 27 - - V
V
GS(th)
gate-source threshold
voltage
I
D
=1mA; V
DS
=V
GS
; T
j
=25°C;
see Figure 10; see Figure 11
1.05 1.46 1.95 V
I
D
=10mA; V
DS
=V
GS
; T
j
=150°C 0.5--V
I
D
=1mA; V
DS
=V
GS
; T
j
=-55°C --2.25V
I
DSS
drain leakage current V
DS
=30V; V
GS
=0V; T
j
=25°C --1µA
V
DS
=30V; V
GS
=0V; T
j
= 150 °C - - 100 µA
I
GSS
gate leakage current V
GS
=16V; V
DS
=0V; T
j
= 25 °C - - 100 nA
V
GS
=-16V; V
DS
=0V; T
j
= 25 °C - - 100 nA
R
DSon
drain-source on-state
resistance
V
GS
=4.5V; I
D
=25A; T
j
=25°C;
see Figure 12
- 1.35 1.65 mΩ
V
GS
=4.5V; I
D
=25A; T
j
=150°C;
see Figure 13; see Figure 12
--2.8mΩ
V
GS
=10V; I
D
=25A; T
j
=25°C;
see Figure 12
- 1.05 1.25 mΩ
V
GS
=10V; I
D
=25A; T
j
= 150 °C;
see Figure 13; see Figure 12
--2.05mΩ
R
G
gate resistance f = 1 MHz - 1.1 2.2 Ω
Dynamic characteristics
Q
G(tot)
total gate charge I
D
=25A; V
DS
=15V; V
GS
=10V;
see Figure 14
; see Figure 15
-78-nC
I
D
=25A; V
DS
=15V; V
GS
=4.5V;
see Figure 14
; see Figure 15
-38-nC
I
D
=0A; V
DS
=0V; V
GS
=10V - 75 - nC
Q
GS
gate-source charge I
D
=25A; V
DS
=15V; V
GS
=4.5V;
see Figure 14
; see Figure 15
- 10.3 - nC
Q
GS(th)
pre-threshold
gate-source charge
-6.7-nC
Q
GS(th-pl)
post-threshold
gate-source charge
-3.6-nC
Q
GD
gate-drain charge - 11.6 - nC
V
GS(pl)
gate-source plateau
voltage
I
D
=25A; V
DS
=15V; see Figure 14;
see Figure 15
-2.34-V
C
iss
input capacitance V
DS
=15V; V
GS
= 0 V; f = 1 MHz;
T
j
=25°C; see Figure 16
- 5093 - pF
C
oss
output capacitance - 977 - pF
C
rss
reverse transfer
capacitance
- 333 - pF
t
d(on)
turn-on delay time V
DS
=15V; R
L
=0.6Ω; V
GS
=4.5V;
R
G(ext)
=4.7Ω
-36-ns
t
r
rise time - 60 - ns
t
d(off)
turn-off delay time - 75 - ns
t
f
fall time - 39 - ns
PSMN1R2-30YLC All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 1 — 3 May 2011 7 of 15
NXP Semiconductors
PSMN1R2-30YLC
N-channel 30 V 1.25mΩ logic level MOSFET in LFPAK using NextPower
Q
oss
output charge V
GS
=0V; V
DS
=15V; f=1MHz;
T
j
=25°C
-33-nC
Source-drain diode
V
SD
source-drain voltage I
S
=25A; V
GS
=0V; T
j
=25°C;
see Figure 17
-0.81.1V
t
rr
reverse recovery time I
S
=25A; dI
S
/dt = -100 A/µs; V
GS
=0V;
V
DS
=15V
- 41.5 - ns
Q
r
recovered charge - 45 - nC
t
a
reverse recovery rise
time
V
GS
=0V; I
S
=25A; dI
S
/dt = -100 A/µs;
V
DS
=15V; see Figure 18
-25-ns
t
b
reverse recovery fall
time
- 16.5 - ns
Table 7. Characteristics …continued
Symbol Parameter Conditions Min Typ Max Unit
Fig 6. Output characteristics; drain current as a
function of drain-source voltage; typical values
Fig 7. Drain-source on-state resistance as a function
of gate-source voltage; typical values
003aaf 556
0
20
40
60
80
100
0 0.5 1 1.5 2
V
DS
(V)
I
D
(A)
3.0
4.5
10
2.4
V
GS
(V) = 2.2
2.6
2.8
003aaf 557
0
2
4
6
8
10
12
0481216
V
GS
(V)
R
DS on
(m
Ω
)
PSMN1R2-30YLC All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 1 — 3 May 2011 8 of 15
NXP Semiconductors
PSMN1R2-30YLC
N-channel 30 V 1.25mΩ logic level MOSFET in LFPAK using NextPower
Fig 8. Forward transconductance as a function of
drain current; typical values
Fig 9. Transfer characteristics; drain current as a
function of gate-source voltage
Fig 10. Sub-threshold drain current as a function of
gate-source voltage
Fig 11. Gate-source threshold voltage as a function of
junction temperature
003aaf 562
0
50
100
150
200
250
300
0 25 50 75 100
I
D
(A)
g
fs
(S )
003aaf 564
0
20
40
60
80
100
01234
V
GS
(V)
I
D
(A)
T
j
= 25
°
CT
j
= 150
°
C
003aaf 561
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
0123
V
GS
(V)
I
D
(A)
Min Ma xTyp
003aaf 560
0
1
2
3
-60 0 60 120 180
T
j
(
C)
V
GS(th)
(V)
Min (5 m A)
Ma x (1 m A)
I
D
=5mA
1mA
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PSMN1R2-30YLC,115

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Manufacturer:
Nexperia
Description:
MOSFET N-Ch 30V 1.25mOhms
Lifecycle:
New from this manufacturer.
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