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PSMN1R2-30YLC,115
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
P16-P16
PSMN1R2-30YLC
All informatio
n provided in thi
s document is su
bject to legal
disclaimers.
© NXP B.V
. 2011. All rights reserved.
Product data sheet
Rev
. 1 — 3 May 201
1
9 of 15
NXP Semiconductors
PSMN1R2-30YLC
N-channel 30 V 1.25m
Ω
logic level MOSFET in LFP
AK usin
g NextPower
Fig 12.
Drain-source on-state
resistance as a function
of drain current; typical values
Fig 13.
Normalized drain
-source on-state resistance
factor as a function of junction temperature
Fig 14.
Gate charge waveform definitions
Fig 15.
Gate-source voltage as a function of gate
charge; typical values
003a
a
f 558
0
1
2
3
4
5
6
0
25
50
75
100
I
D
(A)
R
DS
o
n
(m
Ω
)
4.
5
2.
6
3.
0
V
GS
(V) = 2
.
8
3.
5
10
003a
a
f 559
0
0.
5
1
1.
5
2
-
60
0
60
120
180
Tj
(
C)
a
V
GS
=
4.
5V
10V
003aaa5
08
V
GS
V
GS(th)
Q
GS1
Q
GS2
Q
GD
V
DS
Q
G(tot)
I
D
Q
GS
V
GS(pl)
003a
a
f 565
0
2
4
6
8
10
0
25
50
75
100
Q
G
(n
C
)
V
GS
(V)
V
DS
=
15V
24V
6V
PSMN1R2-30YLC
All informatio
n provided in thi
s document is su
bject to legal
disclaimers.
© NXP B.V
. 2011. All rights reserved.
Product data sheet
Rev
. 1 — 3 May 201
1
10 of 15
NXP Semiconductors
PSMN1R2-30YLC
N-channel 30 V 1.25m
Ω
logic level MOSFET in LFP
AK usin
g NextPower
Fig
16.
Inpu
t, output and r
everse tran
sfer capacitances
as a function of
drain-source voltage
; typical
values
Fig 17.
Source current as a fu
nction of drain-source
voltage; typical values
Fig 18.
Reverse recovery timing defin
ition
003a
a
f 563
10
2
10
3
10
4
10
-1
1
10
10
2
V
DS
(V)
C
(p
F
)
C
is s
C
rs
s
C
os
s
003a
a
f 566
0
20
40
60
80
100
0
0
.3
0
.6
0
.9
1
.2
V
SD
(V)
I
S
(A)
T
j
=
25
°
C
T
j
=
150
°
C
003a
a
f 444
0
t (s
)
I
D
(A)
I
RM
0.
25 I
RM
t
rr
t
a
t
b
PSMN1R2-30YLC
All informatio
n provided in thi
s document is su
bject to legal
disclaimers.
© NXP B.V
. 2011. All rights reserved.
Product data sheet
Rev
. 1 — 3 May 201
1
1
1 of 15
NXP Semiconductors
PSMN1R2-30YLC
N-channel 30 V 1.25m
Ω
logic level MOSFET in LFP
AK usin
g NextPower
8.
Package outline
Fig 19.
Package ou
tline SOT669 (LFP
AK; Power-SO8)
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
JEITA
SOT669
MO-235
06-03-16
11-03-25
0
2.5
5 mm
scale
e
E
1
b
c
2
A
2
A
2
bc
A
e
UNIT
DIMENSIONS (mm are the original dimensions)
mm
1.10
0.95
A
3
A
1
0.15
0.00
1.20
1.01
0.50
0.35
b
2
4.41
3.62
b
3
2.2
2.0
b
4
0.9
0.7
0.25
0.19
c
2
0.30
0.24
4.10
3.80
6.2
5.8
H
1.3
0.8
L
2
0.85
0.40
L
1.3
0.8
L
1
8
°
0
°
wy
D
(1)
5.0
4.8
E
(1)
3.3
3.1
E
1
(1)
D
1
(1)
max
0.25
4.20
1.27
0.25
0.1
1
23
4
mounting
base
D
1
c
Plastic single-ended surface-mounted package (LFPAK; Power-SO8); 4 leads
SOT669
E
b
2
b
3
b
4
H
D
L
2
L
1
A
A
w
M
C
C
X
1/2
e
yC
θ
θ
(A )
3
L
A
A
1
detail X
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
P16-P16
PSMN1R2-30YLC,115
Mfr. #:
Buy PSMN1R2-30YLC,115
Manufacturer:
Nexperia
Description:
MOSFET N-Ch 30V 1.25mOhms
Lifecycle:
New from this manufacturer.
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