NX3V1G66 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 7 — 4 November 2011 10 of 18
NXP Semiconductors
NX3V1G66
Low-ohmic single-pole single-throw analog switch
12.2 Additional dynamic characteristics
[1] f
i
is biased at 0.5V
CC
.
12.3 Test circuits
Table 12. Additional dynamic characteristics
At recommended operating conditions; voltages are referenced to GND (ground = 0 V); V
I
= GND or V
CC
(unless otherwise
specified); t
r
= t
f
2.5 ns; T
amb
= 25
C.
Symbol Parameter Conditions Min Typ Max Unit
THD total harmonic
distortion
f
i
=20Hzto20 kHz; R
L
=32; see Figure 17
[1]
V
CC
=1.4V; V
I
= 1 V (p-p) - 0.05 - %
V
CC
=1.65V; V
I
= 1.2 V (p-p) - 0.03 - %
V
CC
=2.3V; V
I
= 1.5 V (p-p) - 0.01 - %
V
CC
=2.7V; V
I
= 2 V (p-p) - 0.01 - %
V
CC
=4.3V; V
I
= 2 V (p-p) - 0.01 - %
f
(3dB)
3 dB frequency
response
R
L
=50; see Figure 18
[1]
V
CC
= 1.4 V to 4.3 V - 25 - MHz
iso
isolation (OFF-state) f
i
= 100 kHz; R
L
=50; see Figure 19
[1]
V
CC
= 1.4 V to 4.3 V - 90 - dB
V
ct
crosstalk voltage between digital input and switch;
f
i
= 1 MHz; C
L
=50pF; R
L
=50; see Figure 20
V
CC
= 1.4 V to 3.6 V - 0.3 - V
V
CC
= 3.6 V to 4.3 V - 0.5 - V
Q
inj
charge injection f
i
= 1 MHz; C
L
= 0.1 nF; R
L
=1 M; V
gen
=0V;
R
gen
=0; see Figure 21
V
CC
= 1.5 V - 6.5 - pC
V
CC
= 1.8 V - 6.5 - pC
V
CC
= 2.5 V - 6.5 - pC
V
CC
= 3.3 V - 6.5 - pC
V
CC
=4.3V - 12 - pC
Fig 17. Test circuit for measuring total harmonic distortion
001aah378
V
IH
V
CC
0.5V
CC
Z/YY/Z
E
f
i
R
L
D
