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NX3V1G66GM,132

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18
NX3V1G66 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 7 — 4 November 2011 4 of 18
NXP Semiconductors
NX3V1G66
Low-ohmic single-pole single-throw analog switch
10. Recommended operating conditions
[1] To avoid sinking GND current from terminal Z when switch current flows in terminal Y, the voltage drop across the bidirectional switch
must not exceed 0.4 V. If the switch current flows into terminal Z, no GND current will flow from terminal Y. In this case, there is no limit
for the voltage drop across the switch.
[2] Applies to control signal levels.
11. Static characteristics
Table 6. Recommended operating conditions
Symbol Parameter Conditions Min Max Unit
V
CC
supply voltage 1.4 4.3 V
V
I
input voltage enable input E 0 4.3 V
V
SW
switch voltage
[1]
0V
CC
V
T
amb
ambient temperature 40 +125 C
t/V input transition rise and fall rate V
CC
= 1.4 V to 4.3 V
[2]
- 200 ns/V
Table 7. Static characteristics
At recommended operating conditions; voltages are referenced to GND (ground 0 V).
Symbol Parameter Conditions T
amb
= 25 C T
amb
= 40 C to +125 C Unit
Min Typ Max Min Max
(85 C)
Max
(125 C)
V
IH
HIGH-level
input voltage
V
CC
= 1.4 V to 1.95 V 0.65V
CC
- - 0.65V
CC
--V
V
CC
= 2.3 V to 2.7 V 1.7 - - 1.7 - - V
V
CC
= 2.7 V to 3.6 V 2.0 - - 2.0 - - V
V
CC
= 3.6 V to 4.3 V 0.7V
CC
--0.7V
CC
--V
V
IL
LOW-level
input voltage
V
CC
= 1.4 V to 1.95 V - - 0.35V
CC
- 0.35V
CC
0.35V
CC
V
V
CC
= 2.3 V to 2.7 V - - 0.7 - 0.7 0.7 V
V
CC
= 2.7 V to 3.6 V - - 0.8 - 0.8 0.8 V
V
CC
= 3.6 V to 4.3 V - - 0.3V
CC
-0.3V
CC
0.3V
CC
V
I
I
input leakage
current
enable input E;
V
I
=GNDto4.3V;
V
CC
= 1.4 V to 4.3 V
--- -0.5 1 A
I
S(OFF)
OFF-state
leakage
current
Y port; see Figure 5
V
CC
= 1.4 V to 3.6 V - - 5-50 500 nA
V
CC
= 3.6 V to 4.3 V - - 10 - 50 500 nA
I
S(ON)
ON-state
leakage
current
Z port; see Figure 6
V
CC
= 1.4 V to 3.6 V - - 5-50 500 nA
V
CC
= 3.6 V to 4.3 V - - 10 - 50 500 nA
I
CC
supply current V
I
=V
CC
or GND;
V
SW
=GNDorV
CC
V
CC
= 3.6 V - - 100 - 690 6000 nA
V
CC
= 4.3 V - - 150 - 800 7000 nA
NX3V1G66 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 7 — 4 November 2011 5 of 18
NXP Semiconductors
NX3V1G66
Low-ohmic single-pole single-throw analog switch
11.1 Test circuits
11.2 ON resistance
C
I
input
capacitance
-1.0- - - -pF
C
S(OFF)
OFF-state
capacitance
-70- - - -pF
C
S(ON)
ON-state
capacitance
- 205 - - - - pF
Table 7. Static characteristics
…continued
At recommended operating conditions; voltages are referenced to GND (ground 0 V).
Symbol Parameter Conditions T
amb
= 25 C T
amb
= 40 C to +125 C Unit
Min Typ Max Min Max
(85 C)
Max
(125 C)
V
I
=0.3VorV
CC
0.3 V; V
O
=V
CC
0.3 V or 0.3 V. V
I
=0.3Vor V
CC
0.3 V; V
O
= open circuit.
Fig 5. Test circuit for measuring OFF-state leakage
current
Fig 6. Test circuit for measuring ON-state leakage
current
001aag488
I
S
V
I
V
IL
V
O
V
CC
GND
nYnZ
nE
001aag489
I
S
V
I
V
IH
V
O
V
CC
GND
nYnZ
nE
Table 8. Resistance R
ON
At recommended operating conditions; voltages are referenced to GND (ground = 0 V); for graphs see Figure 8 to Figure 14.
Symbol Parameter Conditions T
amb
= 40 C to +85 C T
amb
= 40 C to +125 C Unit
Min Typ
[1]
Max Min Max
R
ON(peak)
ON resistance
(peak)
V
I
=GNDtoV
CC
;
I
SW
=100mA; seeFigure 7
V
CC
= 1.4 V - 0.8 1.9 - 2.1
V
CC
= 1.65 V - 0.5 0.8 - 0.9
V
CC
= 2.3 V - 0.3 0.5 - 0.6
V
CC
= 2.7 V - 0.25 0.45 - 0.5
V
CC
= 4.3 V - 0.25 0.45 - 0.5
NX3V1G66 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 7 — 4 November 2011 6 of 18
NXP Semiconductors
NX3V1G66
Low-ohmic single-pole single-throw analog switch
[1] Typical values are measured at T
amb
= 25 C.
[2] Flatness is defined as the difference between the maximum and minimum value of ON resistance measured at identical V
CC
and
temperature.
11.3 ON resistance test circuit and graphs
R
ON(flat)
ON resistance
(flatness)
V
I
=GNDtoV
CC
;
I
SW
=100mA
[2]
V
CC
= 1.4 V - 0.5 1.7 - 1.8
V
CC
= 1.65 V - 0.25 0.6 - 0.7
V
CC
= 2.3 V - 0.1 0.2 - 0.2
V
CC
= 2.7 V - 0.1 0.2 - 0.2
V
CC
= 4.3 V - 0.1 0.25 - 0.25
Table 8. Resistance R
ON
…continued
At recommended operating conditions; voltages are referenced to GND (ground = 0 V); for graphs see Figure 8 to Figure 14.
Symbol Parameter Conditions T
amb
= 40 C to +85 C T
amb
= 40 C to +125 C Unit
Min Typ
[1]
Max Min Max
R
ON
=V
SW
/ I
SW
.(1)V
CC
=1.5V.
(2) V
CC
=1.8V.
(3) V
CC
=2.5V.
(4) V
CC
=2.7V.
(5) V
CC
=3.3V.
(6) V
CC
=4.3V.
Measured at T
amb
=25C.
Fig 7. Test circuit for measuring ON resistance Fig 8. Typical ON resistance as a function of input
voltage
V
I
(V)
054312
001aah800
0.4
0.2
0.6
0.8
R
ON
(Ω)
0
(6)
(5)
(4)
(3)
(2)
(1)
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NX3V1G66GM,132

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Manufacturer:
NXP Semiconductors
Description:
Analog Switch ICs Analog SW Single SPST 3.6V 6-Pin
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