Products and specifications discussed herein are subject to change by Micron without notice.
PDF: 09005aef808f912d/Source: 09005aef808f8ccd Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD9C32_64x72A.fm - Rev. F 10/08 EN
1 ©2003 Micron Technology, Inc. All rights reserved.
256MB, 512MB (x72, ECC, SR) 184-Pin DDR SDRAM UDIMM
Features
DDR SDRAM UDIMM
MT9VDDT3272A – 256MB
MT9VDDT6472A – 512MB
For component data sheets, refer to Micron’s Web site: www.micron.com
Features
• 184-pin, unbuffered dual in-line memory module
(UDIMM)
• Fast data transfer rates: PC2100, PC2700, or PC3200
• 256MB (32 Meg x 72) and 512MB (64 Meg x 72)
• Supports ECC error detection and correction
• Vdd = Vddq = +2.5V (-40B: Vdd = Vddq)
• Vddspd = +2.3V to +3.6V
• 2.5V I/O (SSTL_2-compatible)
• Internal, pipelined double data rate (DDR)
architecture; 2n-prefetch architecture
• Bidirectional data strobe (DQS) transmitted/
received with data—that is, source-synchronous
data capture
• Differential clock inputs (CK and CK#)
• Multiple internal device banks for concurrent
operation
• Single rank
• Selectable burst lengths (BL): 2, 4, or 8
• Auto precharge option
• Auto refresh and self refresh modes: 7.8125µs
maximum average periodic refresh interval
• Serial presence-detect (SPD) with EEPROM
• Selectable CAS latency (CL) for maximum
compatibility
• Gold edge contacts
Figure 1: 184-Pin UDIMM (MO-206)
1. Contact Micron for industrial temperature
module offerings.
2. Not recommended for new designs.
Options Marking
• Operating temperature
1
– Commercial (0°C ≤ T
A
≤ +70°C) None
– Industrial (–40°C ≤ T
A
≤ +85°C) I
•Package
– 184-pin DIMM (standard) G
– 184-pin DIMM (Pb-free) Y
• Memory clock, speed, CAS latency
– 5.0ns (200 MHz), 400 MT/s, CL = 3 -40B
– 6.0ns (167 MHz), 333 MT/s, CL = 2.5 -335
– 7.5ns (133 MHz), 266 MT/s, CL = 2
2
-262
– 7.5ns (133 MHz), 266 MT/s, CL = 2
2
-26A
– 7.5ns (133 MHz), 266 MT/s, CL = 2.5
2
-265
PCB height: 31.75mm (1.25in)
Notes: 1. The values of
t
RCD and
t
RP for -335 modules show 18ns to align with industry specifications;
actual DDR SDRAM device specifications are 15ns.
Table 1: Key Timing Parameters
Speed
Grade
Industry
Nomenclature
Data Rate (MT/s)
t
RCD
(ns)
t
RP
(ns)
t
RC
(ns) NotesCL = 3 CL = 2.5 CL = 2
-40B PC3200 400 333 266 15 15 55
-335 PC2700 – 333 266 18 18 60 1
-262 PC2100 – 266 266 15 15 60
-26A PC2100 – 266 266 20 20 65
-265 PC2100 – 266 200 20 20 65