MT9VDDT3272AY-335K1

PDF: 09005aef808f912d/Source: 09005aef808f8ccd Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD9C32_64x72A.fm - Rev. F 10/08 EN
4 ©2003 Micron Technology, Inc. All rights reserved.
256MB, 512MB (x72, ECC, SR) 184-Pin DDR SDRAM UDIMM
Pin Assignments and Descriptions
Table 6: Pin Descriptions
Symbol Type Description
A0–A12 Input
Address inputs: Provide the row address for ACTIVE commands, and the column address
and auto precharge bit (A10) for READ/WRITE commands, to select one location out of the
memory array in the respective device bank. A10 sampled during a PRECHARGE command
determines whether the PRECHARGE applies to one device bank (A10 LOW, device bank
selected by BA0 and BA1) or all device banks (A10 HIGH). The address inputs also provide the
op-code during a MODE REGISTER SET command. BA0 and BA1 define which mode register
(mode register or extended mode register) is loaded during the LOAD MODE REGISTER
command.
BA0, BA1 Input
Bank address: BA0 and BA1 define the device bank to which an ACTIVE, READ, WRITE, or
PRECHARGE command is being applied.
CK0, CK0#,
CK1, CK1#,
CK2, CK2#
Input
Clock: CK and CK# are differential clock inputs. All address and control input signals are
sampled on the crossing of the positive edge of CK and the negative edge of CK#. Output
data (DQ and DQS) is referenced to the crossings of CK and CK#.
CKE0 Input
Clock enable: CKE enables (registered HIGH) and CKE disables (registered LOW) the internal
clock, input buffers, and output drivers.
DM0–DM8 Input
Input data mask: DM is an input mask signal for write data. Input data is masked when DM
is sampled HIGH, along with that input data, during a write access. DM is sampled on both
edges of DQS. Although DM pins are input-only, the DM loading is designed to match that of
DQ and DQS pins.
RAS#, CAS#,
WE#
Input
Command inputs: RAS#, CAS#, and WE# (along with S#) define the command being
entered.
S0# Input
Chip selects: S# enables (registered LOW) and disables (registered HIGH) the command
decoder.
SA0–SA2 Input
Presence-detect address inputs: These pins are used to configure the SPD EEPROM address
range on the I
2
C bus.
SCL Input
Serial clock for SPD EEPROM: SCL is used to synchronize the presence-detect data transfer
to and from the module.
CB0–CB7 I/O
Check bits.
DQ0–DQ63 I/O
Data input/output: Data bus.
DQS0–DQS8 I/O
Data strobe: Output with read data. Edge-aligned with read data. Input with
write data. Center-aligned with write data. Used to capture data.
SDA I/O
Serial data: SDA is a bidirectional pin used to transfer addresses and data into and out of
the presence-detect portion of the module.
Vdd/Vddq Supply
Power supply: +2.5V ±0.2V (-40B: +2.6V ±0.1V)
Vddspd Supply
SPD EEPROM power supply: +2.3V to +3.6V.
Vref Supply
SSTL_2 reference voltage (Vdd/2).
Vss Supply
Ground.
NC
No connect: These pins are not connected on the module.
PDF: 09005aef808f912d/Source: 09005aef808f8ccd Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD9C32_64x72A.fm - Rev. F 10/08 EN
5 ©2003 Micron Technology, Inc. All rights reserved.
256MB, 512MB (x72, ECC, SR) 184-Pin DDR SDRAM UDIMM
Functional Block Diagram
Functional Block Diagram
Figure 2: Functional Block Diagram
DQ56
DQ57
DQ58
DQ59
DQ60
DQ61
DQ62
DQ63
U9
DQ48
DQ49
DQ50
DQ51
DQ52
DQ53
DQ54
DQ55
U7
DQ40
DQ41
DQ42
DQ43
DQ44
DQ45
DQ46
DQ47
U6
DQ32
DQ33
DQ34
DQ35
DQ36
DQ37
DQ38
DQ39
U5
DQ24
DQ25
DQ26
DQ27
DQ28
DQ29
DQ30
DQ31
U4
DQ16
DQ17
DQ18
DQ19
DQ20
DQ21
DQ22
DQ23
U2
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
DM CS# DQS
U1
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DM9
S0#
U3
DM CS# DQS
DM CS# DQS
DM CS# DQS
DQS0
DM13
DQS4
DM10
DQS1
DM14
DQS5
DM11
DQS2
DM15
DQS6
DM CS# DQS
U8
DM CS# DQS
DM CS# DQS DM CS# DQS
DM CS# DQS
DM12
DQS3
DM16
DQS7
DM17
DQS8
CB0
CB1
CB2
CB3
CB4
CB5
CB6
CB7
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
U4–U6
CK0
CK0#
U1–U3
CK1
CK1#
U7–U9
CK2
CK2#
A0
SPD EEPROM
A1
A2
SA0 SA1 SA2
SDA
SCL
WP
U10
Vref
Vss
DDR SDRAM
Vdd/Vddq
DDR SDRAM
Vddspd
SPD EEPROM
DDR SDRAM
V
SS
BA0, BA1
A0–A12
RAS#
CAS#
WE#
CKE0
BA0, BA1: DDR SDRAM
A0–A12: DDR SDRAM
RAS#: DDR SDRAM
CAS#: DDR SDRAM
WE#: DDR SDRAM
CKE0: DDR SDRAM
PDF: 09005aef808f912d/Source: 09005aef808f8ccd Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD9C32_64x72A.fm - Rev. F 10/08 EN
6 ©2003 Micron Technology, Inc. All rights reserved.
256MB, 512MB (x72, ECC, SR) 184-Pin DDR SDRAM UDIMM
General Description
General Description
The MT9VDDT3272A and MT9VDDT6472A are high-speed, CMOS dynamic random
access 256MB and 512MB memory modules organized in a x72 configuration. These
modules use DDR SDRAM devices with 4 internal banks.
DDR SDRAM modules use a double data rate architecture to achieve high-speed opera-
tion. The double data rate architecture is essentially a 2n-prefetch architecture with an
interface designed to transfer 2 data words per clock cycle at the I/O pins. A single read
or write access for DDR SDRAM modules effectively consists of a single 2n-bit-wide,
one-clock-cycle data transfer at the internal DRAM core and 2 corresponding
n-bit-wide, one-half-clock-cycle data transfers at the I/O pins.
A bidirectional data strobe (DQS) is transmitted externally, along with data, for use in
data capture at the receiver. DQS is a strobe transmitted by the DDR SDRAM during
READs and by the memory controller during WRITEs. DQS is edge-aligned with data for
READs and center-aligned with data for WRITEs.
DDR SDRAM modules operate from differential clock inputs (CK and CK#); the crossing
of CK going HIGH and CK# going LOW will be referred to as the positive edge of CK.
Control, command, and address signals are registered at every positive edge of CK. Input
data is registered on both edges of DQS, and output data is referenced to both edges of
DQS, as well as to both edges of CK.
Serial Presence-Detect Operation
DDR SDRAM modules incorporate serial presence-detect. The SPD data is stored in a
256-byte EEPROM. The first 128 bytes are programmed by Micron to identify the module
type and various DDR SDRAM organizations and timing parameters. The remaining 128
bytes of storage are available for use by the customer. System READ/WRITE operations
between the master (system logic) and the slave EEPROM device occur via a standard
I
2
C bus using the DIMM’s SCL (clock) and SDA (data) signals, together with SA[2:0],
which provide 8 unique DIMM/EEPROM addresses. Write protect (WP) is connected to
Vss, permanently disabling hardware write protect.

MT9VDDT3272AY-335K1

Mfr. #:
Manufacturer:
Micron
Description:
MODULE DDR SDRAM 256MB 184UDIMM
Lifecycle:
New from this manufacturer.
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