0.3 GHz to 6 GHz, 35 W, GaN
Power Amplifier
Data Sheet
HMC8205BF10
Rev. C Document Feedback
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FEATURES
High P
SAT
: 46 dBm
High power gain: 20 dB
High PAE: 38%
Instantaneous bandwidth: 0.3 GHz to 6 GHz
Supply voltage: V
DD
= 50 V at 1300 mA
10-lead LDCC package
APPLICATIONS
Military jammers
Commercial and military radar
Power amplifier stage for wireless infrastructure
Test and measurement equipment
FUNCTIONAL BLOCK DIAGRAM
1
2
3
4
5
V
DD
2
V
DD
2
RFIN
NC
NC
NC
NC
RFOUT
V
GG
1
V
DD
1
10
9
8
7
6
PACKAGE BASE
GND
HMC8205BF10
13790-001
Figure 1.
GENERAL DESCRIPTION
The HMC8205BF10 is a gallium nitride (GaN) broadband
power amplifier delivering 45.5 dBm (35 W) with 38% power
added efficiency (PAE) across an instantaneous bandwidth of
0.3 GHz to 6 GHz. No external matching is required to achieve
full band operation. Additionally, no external inductor is
required to bias the amplifier. Also, dc blocking capacitors for
the RFIN and RFOUT pins are integrated into the HMC8205BF10.
The HMC8205BF10 is ideal for pulsed or continuous wave
(CW) applications, such as military jammers, wireless
infrastructure, radar, and general-purpose amplification.
The HMC8205BF10 amplifier is a 10-lead ceramic leaded chip
carrier (LDCC).
HMC8205BF10 Data Sheet
Rev. C | Page 2 of 14
TABLE OF CONTENTS
Features .............................................................................................. 1
Applications ....................................................................................... 1
Functional Block Diagram .............................................................. 1
General Description ......................................................................... 1
Revision History ............................................................................... 2
Specifications ..................................................................................... 3
Electrical Specifications ............................................................... 3
Absolute Maximum Ratings ............................................................ 4
Thermal Resistance ...................................................................... 4
ESD Caution .................................................................................. 4
Pin Configuration and Function Descriptions ..............................5
Interface Schematics .....................................................................5
Typical Performance Characteristics ..............................................6
Theory of Operation ...................................................................... 11
Applications Information .............................................................. 12
Application Circuit ..................................................................... 12
Evaluation PCB ........................................................................... 13
Outline Dimensions ....................................................................... 14
Ordering Guide .......................................................................... 14
REVISION HISTORY
8/2018Rev. B to Rev. C
Changes to Ordering Guide .......................................................... 14
8/2017Rev. A to Rev. B
Changes to Figure 21 ........................................................................ 8
7/2017Rev. 0 to Rev. A
Changes to Maximum Peak Reflow Temperature Parameter,
Table 3 and Table 5 ........................................................................... 4
Changes to Table 6 ............................................................................ 5
Changes to Theory of Operation Section .................................... 11
Changes to Figure 39 ...................................................................... 12
5/2017Revision 0: Initial Version
Data Sheet HMC8205BF10
Rev. C | Page 3 of 14
SPECIFICATIONS
ELECTRICAL SPECIFICATIONS
T
A
= 25°C, V
DD
= 50 V, I
DQ
= 1300 mA, frequency range = 0.3 GHz to 3 GHz.
Table 1.
Parameter Symbol Min Typ Max Unit Test Conditions/Comments
FREQUENCY RANGE 0.3 3 GHz
GAIN
Small Signal Gain 23 26 dB
Gain Flatness ±2 dB
RETURN LOSS
Input 13 dB
Output 12 dB
POWER
4 dB Compressed Power P
4dB
39 45 dBm
Saturated Output Power P
SAT
46 dBm
Power Gain for P
SAT
dB
Power Added Efficiency PAE 38 %
TOTAL SUPPLY CURRENT I
DQ
1300 mA
SUPPLY VOLTAGE V
DD
28 50 55 V
T
A
= 25°C, V
DD
= 50 V, I
DQ
= 1300 mA, frequency range = 3 GHz to 6 GHz.
Table 2.
Parameter Symbol Min Typ Max Unit Test Conditions/Comments
FREQUENCY RANGE 3 6 GHz
GAIN
Small Signal Gain 25 28 dB
Gain Flatness ±2 dB
RETURN LOSS
Input
dB
Output 7 dB
POWER
4 dB Compressed Power
P
4dB
39
dBm
Saturated Output Power P
SAT
46 dBm
Power Gain for P
SAT
19 dB
Power Added Efficiency PAE 35 %
TOTAL SUPPLY CURRENT I
DQ
1300 mA
SUPPLY VOLTAGE V
DD
28 50 55 V

HMC8205BF10

Mfr. #:
Manufacturer:
Analog Devices Inc.
Description:
RF Amplifier 0.3-6GHz 30W PA w/ Driver
Lifecycle:
New from this manufacturer.
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