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HMC8205BF10

P1-P3P4-P6P7-P9P10-P12P13-P14
HMC8205BF10 Data Sheet
Rev. C | Page 4 of 14
ABSOLUTE MAXIMUM RATINGS
This device is not surface mountable and is not intended nor
suitable to be used in a solder reflow process. This device must
not be exposed to ambient temperatures above 150°C.
Table 3.
Parameter Rating
Drain Bias Voltage (V
DD
) 60 V dc
Gate Bias Voltage (V
GG
1) −8 V to 0 V dc
Radio Frequency (RF) Input Power (RFIN) 35 dBm
Continuous Power Dissipation (P
DISS
) (T = 85°C)
(Derate 636 mw/°C Above 85°C)
89.4 W
Storage Temperature Range −55°C to +150°C
Operating Temperature Range −40°C to +85°C
Human Body Model (HBM) Electrostatic
Discharge (ESD) Sensitivity
375 V
Stresses at or above those listed under Absolute Maximum
Ratings may cause permanent damage to the product. This is a
stress rating only; functional operation of the product at these
or any other conditions above those indicated in the operational
section of this specification is not implied. Operation beyond
the maximum operating conditions for extended periods may
affect product reliability.
THERMAL RESISTANCE
Thermal performance is directly linked to printed circuit board
(PCB) design and operating environment. Careful attention to
PCB thermal design is required.
Table 4. Thermal Resistance
Package Type θ
JC
Unit
EJ-10-1 1.57 °C/W
Table 5. Reliability Information
Parameter
Temperature
(°C)
Junction Temperature to Maintain 1,000,000
Hour Mean Time to Failure (MTTF)
225
Nominal Junction Temperature (T = 85°C,
V
DD
= 50 V)
187
ESD CAUTION
Data Sheet HMC8205BF10
Rev. C | Page 5 of 14
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
1
2
3
4
5
V
DD
2
V
DD
2
RFIN
NC
NC
NC
NC
RFOUT
V
GG
1
V
DD
1
10
9
8
7
6
PACKAGE BASE
GND
HMC8205BF10
13790-101
Figure 2. Pin Configuration
Table 6. Pin Function Descriptions
Pin No. Mnemonic Description
1, 2 V
DD
2 Drain Bias for Second Stage of Amplifier. See Figure 3 for the V
DD
2 interface schematic.
3 RFIN RF Input (RFIN). It is ac-coupled and internally matched to 50 Ω. See Figure 4 for the RFIN interface
schematic.
4, 5, 9, 10 NC No Internal Connection.
6 V
DD
1 Drain Bias for First Stage of Amplifier. See Figure 5 for the V
DD
1 interface schematic.
7 V
GG
1 Gate Control for Second Stage of Amplifier. See Figure 6 for the V
GG
1 interface schematic.
8 RFOUT RF Output (RFOUT). It is ac-coupled and internally matched to 50 Ω. See Figure 7 for the RFOUT interface
schematic.
Package Base GND Package Base. The package base must be connected to RF/dc ground. See Figure 8 for the GND Interface
schematic.
INTERFACE SCHEMATICS
V
DD
2
13790-002
Figure 3. V
DD
2 Interface
RFIN
13790-003
Figure 4. RFIN Interface
V
DD
1
13790-005
Figure 5. V
DD
1 Interface
V
GG
1
13790-004
Figure 6. V
GG
1 Interface
RFOUT
13790-006
Figure 7. RFOUT Interface
GND
13790-007
Figure 8. GND Interface
HMC8205BF10 Data Sheet
Rev. C | Page 6 of 14
TYPICAL PERFORMANCE CHARACTERISTICS
13790-008
40
–20
–10
0
10
20
30
0 1 2 3 4 5 6
GAIN AND RETURN LOSS (dB)
FREQUENCY (GHz)
S22
S21
S11
Figure 9. Gain and Return Loss vs. Frequency
35
0
10
5
15
20
25
30
0 1 2 3 4
5 6
GAIN (dB)
FREQUENCY (GHz)
13790-033
28V
40V
45V
50V
55V
Figure 10. Gain vs. Frequency at Various Supply Voltages
0
–25
–20
–15
–10
–5
0 1
2 3 4 5 6
INPUT RETURN LOSS (dB)
FREQUENCY (GHz)
13790-009
+85°C
+25°C
–40°C
Figure 11. Input Return Loss vs. Frequency at Various Temperatures
35
10
15
20
25
30
0 1
2 3
4
5 6
GAIN (dB)
FREQUENCY (GHz)
+85°C
+25°C
–40°C
13790-011
Figure 12. Gain vs. Frequency at Various Temperatures
40
35
30
25
20
GAIN (dB)
15
10
5
0
0 1 2 3 4 5 6
FREQUENCY (GHz)
500mA
900mA
1300mA
13790-032
Figure 13. Gain vs. Frequency at Various Supply Currents
–25
–20
–15
–10
–5
0
0 1 2 3 4 5 6
INPUT RETURN LOSS (dB)
FREQUENCY (GHz)
13790-031
28V
40V
45V
50V
55V
Figure 14. Input Return Loss vs. Frequency at Various Supply Voltages
P1-P3P4-P6P7-P9P10-P12P13-P14

HMC8205BF10

Mfr. #:
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Manufacturer:
Analog Devices Inc.
Description:
RF Amplifier 0.3-6GHz 30W PA w/ Driver
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