NCV7520
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4
PACKAGE PIN DESCRIPTION 32 PIN QFN EXPOSED PAD PACKAGE
Label Description
FLTREF Analog Fault Detect Threshold: 5 V Compliant
DRN0 − DRN5 Analog Drain Feedback
GAT0 − GAT5 Analog Gate Drive: 5 V Compliant
RSTB Digital Master Reset Input: 3.3 V/5 V (TTL) Compatible
ENB Digital Master Enable Input: 3.3 V/5 V (TTL) Compatible
IN0 − IN5 Digital Parallel Input: 3.3 V/5 V (TTL) Compatible
CSB Digital Chip Select Input: 3.3 V/5 V (TTL) Compatible
SCLK Digital Shift Clock Input: 3.3 V/5 V (TTL) Compatible
SI Digital Serial Data Input: 3.3 V/5 V (TTL) Compatible
SO Digital Serial Data Output: 3.3 V/5 V Compliant
FLTB Digital Open−Drain Output: 3.3 V/5 V Compliant
VLOAD Power Supply − Diagnostic References and Currents
VCC1 Power Supply − Low Power Path
GND Power Return − Low Power Path − Device Substrate
VCC2 Power Supply − Gate Drivers
VDD Power Supply − Serial Output Driver
VSS Power Return − VLOAD, VCC2, VDD
EP Exposed Pad − Connected to GND − Device Substrate
Figure 3. 32 Pin QFN Exposed Pad Pinout (Top View)
IN0
IN1
IN2
IN3
IN4
IN5
ENB
RSTB
FLTB
CSB
SCLK
SI
SO
VDD
VSS
VLOAD
GAT2
DRN2
GAT3
DRN3
GAT4
DRN4
GAT5
DRN5
GND
FLTREF
VCC1
VCC2
GAT0
DRN0
GAT1
DRN1
16
17
1514131211109
8
18
19
20
21
22
23
24
7
6
5
4
3
2
1
2526272829303132
Exposed Pad
(EP)
NCV7520
MW SUFFIX
Figure 4. 32 Pin TQFP Exposed Pad Pinout (Top View)
Exposed Pad
(EP)
NCV7520
FP SUFFIX
FLTB
CSB
SCLK
SI
SO
VDD
VSS
VLOAD
161514131211109
GND
FLTREF
VCC1
VCC2
GAT0
DRN0
GAT1
DRN1
2526272829303132
GAT2
DRN2
GAT3
DRN3
GAT4
DRN4
GAT5
DRN5
17
18
19
20
21
22
23
24IN0
IN1
IN2
IN3
IN4
IN5
ENB
RSTB
8
7
6
5
4
3
2
1
NCV7520
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5
MAXIMUM RATINGS (Voltages are with respect to device substrate.)
Rating
Value Unit
DC Supply − V
LOAD
−0.3 to 48 V
DC Supply − V
CC1
, V
CC2
, V
DD
−0.3 to 5.8 V
Difference Between V
CC1
and V
CC2
±0.3 V
Difference Between GND (Substrate) and V
SS
±0.3 V
Drain Input Clamp Forward Voltage Transient (2 ms, 1% duty) 78 V
Drain Input Clamp Forward Current Transient (2 ms, 1% duty) 10 mA
Drain Input Clamp Energy Repetitive (2 ms, 1% duty) 1.56 mJ
Drain Input Clamp Reverse Current V
DRNX
−1.0 V −50 mA
Input Voltage (Any Input Other Than Drain) −0.3 to 5.8 V
Output Voltage (Any Output) −0.3 to 5.8 V
Junction Temperature, T
J
−40 to 150 °C
Storage Temperature, T
STG
−65 to 150 °C
Peak Reflow Soldering Temperature: Lead−free 60 to 150 seconds at 217°C (Note 1) 260 peak °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. See or download ON Semiconductor’s Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
ATTRIBUTES
Characteristic Conditions
Package
QFN32 TQFP32
ESD Capability
Human Body Model per AEC−Q100−002
Drain Feedback Pins (Note 3)
All Other Pins
±4.0 kV
±2.0 kV
±4.0 kV
±2.0 kV
Moisture Sensitivity (Note 2) MSL3 MSL3
Package Thermal Resistance − Still−air
Junction−to−Ambient, Rq
JA
Junction−to−Exposed Pad, RY
JPAD
(Note 4)
(Note 5)
62°C/W
26°C/W
1.8°C/W
64°C/W
30°C/W
5.2°C/W
2. See or download ON Semiconductor’s Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
3. With GND & V
SS
pins tied together − path between drain feedback pins and GND, or between drain feedback pins.
4. 2S0P 2−layer PCB based on JESD51−3, 80 x 80 x 1.6 mm FR4, 20 thermal vias, 2 oz. Signal, 2 oz. 400 mm
2
bottom spreader.
5. 2S2P 4−layer PCB based on JESD51−7, 80 x 80 x 1.6 mm FR4, 20 thermal vias, 2 oz. Signal, 1 oz. 6400 mm
2
internal spreaders.
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Min Max Unit
V
LOAD
Diagnostic References and Currents Power Supply Voltage 7.5 36.0 V
V
DRNX
Drain Input Feedback Voltage −0.3 60 V
V
CC1
Main Power Supply Voltage 4.75 5.25 V
V
CC2
Gate Drivers Power Supply Voltage V
CC1
− 0.3 V
CC1
+ 0.3 V
V
DD
Serial Output Driver Power Supply Voltage 3.0 V
CC1
V
V
FLTREF
Fault Detect Threshold Reference Voltage 0.35 2.75 V
V
IN
High Logic High Input Voltage 2.0 V
CC1
V
V
IN
Low Logic Low Input Voltage 0 0.8 V
T
A
Ambient Still−air Operating Temperature −40 125 °C
t
RESET
Startup Delay at Power−on Reset (POR) (Note 6) 200
ms
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
6. Minimum wait time until device is ready to accept serial input data.
NCV7520
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6
PARAMETRIC TABLES
ELECTRICAL CHARACTERISTICS
(4.75 V V
CCX
5.25 V, V
DD
= V
CCX
, 4.5 V V
LOAD
36 V, RSTB = V
CCX
, ENB = 0, −40°C T
J
150°C, unless otherwise specified.)
(Note 7)
Characteristic
Symbol Conditions Min Typ Max Unit
V
CC1
SUPPLY
Operating Current −
V
CC1
= 5.25 V, V
FLTREF
= 2.75 V
I
CC1A
RSTB = 0 2.80 5.0 mA
I
CC1B
ENB = 0, RSTB = V
CC1
, V
DRNX
=0 V, GAT
X
Drivers Off
3.10 5.0 mA
I
CC1C
ENB = 0, RSTB = V
CC1
, GAT
X
Drivers On 2.80 5.0 mA
Power−On Reset Threshold POR V
CC1
Rising 3.65 4.125 4.60 V
Power−On Reset Hysteresis PORH 0.150 0.385 V
V
CC2
SUPPLY
Operating Current
I
CC2
V
CC2
= 5.25 V, ENB = 0, RSTB = V
CC1
= 5.25 V
V
DRNX
= 0 V, GAT
X
Drivers Off
2.80 5.0 mA
V
DD
SUPPLY
Standby Current
I
DD1
V
DD
= 5.25V, ENB = 0, RSTB = V
CC1
= 5.25 V
SO = Z
25.0 34.0
mA
Operating Current I
DD2
V
DD
= 5.25V, ENB = 0, RSTB = V
CC1
= 5.25 V
SO = H or L
625 850
mA
V
LOAD
SUPPLY
Standby Current
V
LDSBY
V
LOAD
= 24 V, 0 V
CC1
5.25,
ENB = RSTB = V
CC1
, T
A
85°C
10
mA
Operating Current V
LDOP
V
LOAD
= 36 V, ENB = 0, RSTB = V
CC1,
V
DRNX
= 0 V
22 30 mA
DIGITAL I/O
V
IN
High V
IHX
RSTB, ENB, IN
X
, SI, SCLK, CSB 2.0 V
V
IN
Low V
ILX
RSTB, ENB, IN
X
, SI, SCLK, CSB 0.8 V
V
IN
Hysteresis IN
HY
RSTB, ENB, IN
X
, SI, SCLK, CSB 100 330 500 mV
Input Pullup Resistance R
PUX
ENB, CSB, V
IN
= 0 V 50 125 200
kW
Input Pulldown Resistance R
PDX
RSTB, IN
X
, SI, SCLK, V
IN
= V
CC1
50 125 200
kW
SO Low Voltage V
SOL
V
DD
= 3.0 V, I
SINK
= 2 mA 0.4 V
SO High Voltage V
SOH
V
DD
= 3.0 V , I
SOURCE
= 2 mA V
DD
0.6
V
SO Output Resistance R
SO
Output High or Low 25
W
SO Tri−State Leakage Current SO
LKG
CSB = 3.0 V −5.0 5.0
mA
FLTB Low Voltage V
FLTB
FLTB Active, I
FLTB
= 1.25 mA 0.4 V
FLTB Leakage Current I
FLTLKG
V
FLTB
= V
CC1
10
mA
RSTB Assert Time t
WRST
t
ASSERT
< t
WRST
(MIN) guaranteed to be rejected
t
ASSERT
> t
WRST
(MAX) guaranteed to be accepted
1.0 2.5
ms
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
7. Min/Max values are valid for the temperature range −40°C T
J
150°C unless noted otherwise. Min/Max values are guaranteed by test,
design or statistical correlation.
8. Guaranteed by design.

NCV7520FPR2G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Gate Drivers AUTOMOTIVE DRIVER
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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