NTLLD4901NF
http://onsemi.com
2
MAXIMUM RATINGS (T
J
= 25°C unless otherwise stated)
Parameter Symbol Value Unit
Drain−to−Source Voltage Q1
V
DSS
30 V
Drain−to−Source Voltage Q2
Gate−to−Source Voltage Q1
V
GS
±20 V
Gate−to−Source Voltage Q2
Continuous Drain Current R
q
JA
(Note 1)
Steady
State
T
A
= 25°C
Q1 I
D
8.3
A
T
A
= 85°C 6.0
T
A
= 25°C
Q2
9.6
T
A
= 85°C 6.9
Power Dissipation
RqJA (Note 1)
T
A
= 25°C
Q1
P
D
1.82
W
Q2 1.88
Continuous Drain Current R
q
JA
≤ 10 s (Note 1) T
A
= 25°C
Q1 I
D
11
A
T
A
= 85°C 8
T
A
= 25°C
Q2
13
T
A
= 85°C 9.1
Power Dissipation
R
q
JA
≤ 10 s (Note 1)
T
A
= 25°C
Q1
P
D
3.23
W
Q2 3.27
Continuous Drain Current
R
q
JA
(Note 2)
T
A
= 25°C
Q1 I
D
5.5
A
T
A
= 85°C 4.0
T
A
= 25°C
Q2
6.3
T
A
= 85°C 4.5
Power Dissipation
R
q
JA
(Note 2)
T
A
= 25 °C Q1
P
D
0.80
W
Q2 0.81
Pulsed Drain Current TA = 25°C
tp = 10 ms
Q1
I
DM
65
A
Q2 70
Operating Junction and Storage Temperature
Q1
T
J
, T
STG
−55 to +150 °C
Q2
Source Current (Body Diode)
Q1
I
S
4.2
A
Q2 6.0
Drain to Source DV/DT dV/dt 6 V/ns
Single Pulse Drain−to−Source Avalanche Energy (T
J
= 25C, V
DD
= 50 V,
V
GS
= 10 V, I
L
= 9.0 A
pk
, L = 0.3 mH, R
G
= 25 W)
Q1 EAS 12
mJ
Single Pulse Drain−to−Source Avalanche Energy (T
J
= 25C, V
DD
= 50 V,
V
GS
= 10 V, I
L
= 9.5 A
pk
, L = 0.3 mH, R
G
= 25 W)
Q2 EAS 13.5
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
T
L
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Surface−mounted on FR4 board using 1 sq−in pad, 2 oz Cu
2. Surface−mounted on FR4 board using the minimum recommended pad size of 90 mm
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