NTLLD4901NFTWG

NTLLD4901NF
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4
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise specified)
Parameter UnitMaxTypMinTest ConditionSymbolFET
CHARGES, CAPACITANCES & GATE RESISTANCE
Total Gate Charge
Q1
Q
G(TOT)
V
GS
= 4.5 V, V
DS
= 15 V; I
D
= 9 A
6.5
nC
Q2 5.0
Threshold Gate Charge
Q1
Q
G(TH)
1.1
Q2 1.1
GatetoSource Charge
Q1
Q
GS
1.9
Q2 2.0
GatetoDrain Charge
Q1
Q
GD
3.2
Q2 1.46
Total Gate Charge
Q1
Q
G(TOT)
V
GS
= 10 V, V
DS
= 15 V; I
D
= 9 A
12
nC
Q2 10.6
SWITCHING CHARACTERISTICS (Note 6)
TurnOn Delay Time
Q1
t
d(ON)
V
GS
= 4.5 V, V
DS
= 15 V,
I
D
= 9 A, R
G
= 3.0 W
8.0
ns
Q2 7.5
Rise Time
Q1
t
r
7.2
Q2 11.2
TurnOff Delay Time
Q1
t
d(OFF)
11
Q2 11.6
Fall Time
Q1
t
f
3.3
Q2 1.9
SWITCHING CHARACTERISTICS (Note 6)
TurnOn Delay Time
Q1
t
d(ON)
V
GS
= 10 V, V
DS
= 15 V,
I
D
= 9 A, R
G
= 3.0 W
4.2
ns
Q2 4.3
Rise Time
Q1
t
r
11.6
Q2 11.4
TurnOff Delay Time
Q1
t
d(OFF)
14.1
Q2 14.3
Fall Time
Q1
t
f
2.0
Q2 1.3
DRAINSOURCE DIODE CHARACTERISTICS
Forward Voltage
Q1
V
SD
V
GS
= 0 V,
I
S
= 3 A
T
J
= 25°C 0.80 1.2
V
T
J
= 125°C 0.65
Q2
V
GS
= 0 V,
I
S
= 2 A
T
J
= 25°C 0.50 0.80
T
J
= 125°C 0.45
5. Pulse Test: pulse width 300 ms, duty cycle 2%
6. Switching characteristics are independent of operating junction temperatures.
NTLLD4901NF
http://onsemi.com
5
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise specified)
Parameter UnitMaxTypMinTest ConditionSymbolFET
DRAINSOURCE DIODE CHARACTERISTICS
Reverse Recovery Time
Q1
t
RR
V
GS
= 0 V, d
IS
/d
t
= 100 A/ms, I
S
= 3 A
17.9
ns
Q2 23.3
Charge Time
Q1
ta
9.0
Q2 11.3
Discharge Time
Q1
tb
9.0
Q2 12
Reverse Recovery Charge
Q1
Q
RR
8.0
nC
Q2 12
PACKAGE PARASITIC VALUES
Source Inductance
Q1
L
S
T
A
= 25°C
0.36
nH
Q2 0.36
Drain Inductance
Q1
L
D
0.054
nH
Q2 0.054
Gate Inductance
Q1
L
G
1.3
nH
Q2 1.3
Gate Resistance
Q1
R
G
0.8
W
Q2 0.8
5. Pulse Test: pulse width 300 ms, duty cycle 2%
6. Switching characteristics are independent of operating junction temperatures.
ORDERING INFORMATION
Device Package Shipping
NTLLD4901NFTWG WDFN8
(PbFree)
3000 / Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
NTLLD4901NF
http://onsemi.com
6
TYPICAL CHARACTERISTICS Q1
Figure 1. OnRegion Characteristics Figure 2. Transfer Characteristics
V
DS
, DRAINTOSOURCE VOLTAGE (V) V
GS
, GATETOSOURCE VOLTAGE (V)
543210
0
10
20
25
5
4.03.02.01.51.0
0
5
10
25
Figure 3. OnResistance vs. GatetoSource
Resistance
Figure 4. OnResistance vs. Drain Current and
Gate Voltage
V
GS
, GATETOSOURCE VOLTAGE (V) I
D
, DRAIN CURRENT (A)
981076542
10
20
25
30
40
45
55
3025201050
13
14
15
17
20
22
23
Figure 5. OnResistance Variation with
Temperature
Figure 6. DraintoSource Leakage Current
vs. Voltage
T
J
, JUNCTION TEMPERATURE (°C) V
DS
, DRAINTOSOURCE VOLTAGE (V)
12510075502502550
0.5
1.2
1.4
1.6
1.7
30252015100
1E11
1E10
I
D
, DRAIN CURRENT (A)
I
D
, DRAIN CURRENT (A)
R
DS(on)
, DRAINTOSOURCE RESISTANCE (mW)
R
DS(on)
, DRAINTOSOURCE RESISTANCE (mW)
R
DS(on)
, DRAINTOSOURCE
RESISTANCE (NORMALIZED)
I
DSS
, LEAKAGE (A)
15
V
GS
= 2.2 V
3.0 V
3.2 V
2.8 V
7.5 V
10 V
T
J
= 25°C
V
DS
= 5 V
T
J
= 125°C
T
J
= 55°C
15
20
15
35
50
I
D
= 10 A
15
19
T = 25°C
V
GS
= 4.5 V
V
GS
= 10 V
150
I
D
= 9 A
V
GS
= 10 V
0.8
1.0
T
J
= 125°C
T
J
= 150°C
3
5
3.4 V
3.6 V
3.8 V
2.6 V
2.4 V
4.5 V thru 4 V
2.5 3.5
30
16
18
21
1.1
1.3
1.5
0.7
0.9
0.6
T
J
= 25°C
1E09
1E08
1E07
1E06
1E05

NTLLD4901NFTWG

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
MOSFET NFET WDFN8 30V 9A 20MOHM
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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