NTLLD4901NF
http://onsemi.com
7
TYPICAL CHARACTERISTICS − Q1
Figure 7. Capacitance Variation Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC)
302520151050
0
100
200
400
500
600
700
800
126420
0
1
3
5
6
8
9
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
R
G
, GATE RESISTANCE (W)
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
100101
1
10
100
0.90.80 0.70.60.50.40.3
0
1
2
3
4
5
6
C, CAPACITANCE (pF)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
t, TIME (ns)
I
S
, SOURCE CURRENT (A)
300
T
J
= 25°C
V
GS
= 0 V
C
iss
C
oss
C
rss
810
2
4
7
10
I
D
= 9 A
T
J
= 25°C
V
GS
= 4.5 V
V
DD
= 15 V
QT
Qgs Qgd
V
GS
= 10 V
V
DD
= 15 V
I
D
= 10 A
t
d(off)
t
d(on)
t
f
t
r
T
J
= 25°C
V
GS
= 0 V
7
8
9
0.1 0.2
0.01
0.1
1
10
100
0.1 1 10 100
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
V
GS
= 20 V
SINGLE PULSE
T
C
= 25°C
1 ms
10 ms
10 ms
dc
100 ms
1.0 1.1
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
T
J
, STARTING JUNCTION TEMPERATURE (°C)
13011525 100857055
0
2
4
6
8
10
E
AS
, SINGLE PULSE DRAIN−TO−
SOURCE AVALANCHE ENERGY (mJ)
I
D
= 9 A
12
14
40 145 160
