NTLLD4901NFTWG

NTLLD4901NF
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10
TYPICAL CHARACTERISTICS Q2
Figure 20. Capacitance Variation Figure 21. GatetoSource and
DraintoSource Voltage vs. Total Charge
V
DS
, DRAINTOSOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC)
302520151050
1
100
1000
6420
0
1
3
5
6
8
9
Figure 22. Resistive Switching Time Variation
vs. Gate Resistance
Figure 23. Diode Forward Voltage vs. Current
R
G
, GATE RESISTANCE (W)
V
SD
, SOURCETODRAIN VOLTAGE (V)
100101
1
10
100
0.90.80 0.70.60.50.40.3
0
1
2
3
4
5
6
C, CAPACITANCE (pF)
V
GS
, GATETOSOURCE VOLTAGE (V)
t, TIME (ns)
I
S
, SOURCE CURRENT (A)
10
T
J
= 25°C
V
GS
= 0 V
C
iss
C
oss
C
rss
810
2
4
7
10
I
D
= 9 A
T
J
= 25°C
V
GS
= 4.5 V
V
DD
= 15 V
QT
Qgs Qgd
V
GS
= 10 V
V
DD
= 15 V
I
D
= 10 A
t
d(off)
t
d(on)
t
f
t
r
T
J
= 25°C
V
GS
= 0 V
7
8
0.1 0.2
0.01
0.1
1
10
100
0.1 1 10 100
Figure 24. Maximum Rated Forward Biased
Safe Operating Area
V
DS
, DRAINTOSOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0 V < V
GS
< 20 V
SINGLE PULSE
T
C
= 25°C
1 ms
10 ms
10 ms
dc
100 ms
1.0
Figure 25. Maximum Avalanche Energy vs.
Starting Junction Temperature
T
J
, STARTING JUNCTION TEMPERATURE (°C)
13011525 100857055
0
2
4
6
8
10
E
AS
, SINGLE PULSE DRAINTO
SOURCE AVALANCHE ENERGY (mJ)
I
D
= 9.5 A
12
14
40 145 160
NTLLD4901NF
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11
TYPICAL CHARACTERISTICS Q2
0.01
0.1
1
10
100
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
0.1
0.2
0.02
D = 0.5
0.05
0.01
SINGLE PULSE
THERMAL RESISTANCE, R
q
JA(t)
(°C/W)
t, PULSE TIME (sec)
Figure 26. Thermal Response
NTLLD4901NF
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12
PACKAGE DIMENSIONS
WDFN8 3x3, 0.65P
CASE 511BP
ISSUE A
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED
TERMINAL AND IS MEASURED BETWEEN
0.05 AND 0.15 MM FROM TERMINAL TIP.
4. COPLANARITY APPLIES TO THE EXPOSED
PAD AS WELL AS THE TERMINALS.
5. POSITIONAL TOLERANCE APPLIES TO ALL
OF THE EXPOSED PADS.
A
D
E
B
C0.15
PIN ONE
REFERENCE
TOP VIEW
SIDE VIEW
BOTTOM VIEW
K
D2
E2
C
C0.15
C0.10
C0.08
A1
SEATING
PLANE
NOTE 3
b
8X
0.10 C
0.05 C
A
B
DIM MIN MAX
MILLIMETERS
A 0.70 0.80
A1 0.00 0.05
b 0.30 0.50
D 3.00 BSC
D2 2.35 2.55
E 3.00 BSC
E2 0.90 1.10
e 0.65 BSC
L 0.20 0.40
1
4
8
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
0.65
PITCH
1.15
3.30
1
DIMENSIONS: MILLIMETERS
0.43
NOTE 4
0.50
5X
DETAIL A
A3 0.20 REF
A3
A
DETAIL B
L1
DETAIL A
L
ALTERNATE
CONSTRUCTIONS
A1
A3
L
DETAIL B
MOLD CMPDEXPOSED Cu
ALTERNATE
CONSTRUCTIONS
L1 0.00 0.15
e
RECOMMENDED
G 0.43 BSC
5
2.60
E3 0.40 0.60
G2 0.68 BSC
K 0.20 −−−
e/2
E3
G
G2
A
M
0.10 BC
M
M
A
M
0.10 BC
NOTE 5
NOTE 5
1.80
0.50
6X
0.68
0.65
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NTLLD4901NFTWG

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MOSFET NFET WDFN8 30V 9A 20MOHM
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