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IKP20N60TAHKSA1

P1-P3P4-P6P7-P9P10-P12P13-P13
IKP20N60T
TRENCHSTOP™ Series
IFAG IPC TD VLS
1
Rev. 2.8 18.05.2015
Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft,
fast recovery anti-parallel Emitter Controlled HE diode
Features:
Very low V
CE(sat)
1.5V (typ.)
Maximum Junction Temperature 175°C
Short circuit withstand time 5s
Designed for :
- Frequency Converters
- Uninterrupted Power Supply
TRENCHSTOP™ and Fieldstop technology for 600V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- very high switching speed
- low V
CE(sat)
Positive temperature coefficient in V
CE(sat)
Low EMI
Low Gate Charge
Very soft, fast recovery anti-parallel Emitter Controlled HE diode
Qualified according to JEDEC
1
for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type
I
C
V
CE(sat),Tj=25°C
T
j,max
Marking
Package
IKP20N60T
20A
1.5V
175C
K20T60
PG-TO220-3
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage, T
j
≥ 25C
V
CE
600
V
DC collector current, limited by T
jmax
T
C
= 25C
T
C
= 100C
I
C
41
28
A
Pulsed collector current, t
p
limited by T
jmax
I
Cpul s
60
Turn off safe operating area, V
CE
= 600V, T
j
= 175C, t
p
= 1µs
-
60
Diode forward current, limited by T
jmax
T
C
= 25C
T
C
= 100C
I
F
41
28
Diode pulsed current, t
p
limited by T
jmax
I
Fpul s
60
Gate-emitter voltage
V
GE
20
V
Short circuit withstand time
2)
V
GE
= 15V, V
CC
400V, T
j
150C
t
SC
5
s
Power dissipation T
C
= 25C
P
tot
166
W
Operating junction temperature
T
j
-40...+175
C
Storage temperature
T
stg
-55...+150
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
-
260
1
J-STD-020 and JESD-022
2
)
Allowed number of short circuits: <1000; time between short circuits: >1s.
G
C
E
PG-TO220-3
IKP20N60T
TRENCHSTOP™ Series
IFAG IPC TD VLS
2
Rev. 2.8 18.05.2015
Thermal Resistance
Parameter
Symbol
Conditions
Max. Value
Unit
Characteristic
IGBT thermal resistance,
junction – case
R
thJC
0.9
K/W
Diode thermal resistance,
junction – case
R
thJC D
1.5
Thermal resistance,
junction – ambient
R
thJA
62
Electrical Characteristic, at T
j
= 25 C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
min.
Typ.
max.
Static Characteristic
Collector-emitter breakdown voltage
V
(BR ) C ES
V
GE
=0V, I
C
=0.2mA
600
-
-
V
Collector-emitter saturation voltage
V
CE( s a t )
V
GE
= 15V, I
C
=20A
T
j
=25C
T
j
=175C
-
-
1.5
1.9
2.05
-
Diode forward voltage
V
F
V
GE
=0V, I
F
=20A
T
j
=25C
T
j
=175C
-
-
1.65
1.6
2.05
-
Gate-emitter threshold voltage
V
GE( t h)
I
C
=290µA,V
CE
=V
GE
4.1
4.9
5.7
Zero gate voltage collector current
I
CES
V
CE
=600V,
V
GE
=0V
T
j
=25C
T
j
=175C
-
-
-
-
40
1500
µA
Gate-emitter leakage current
I
GES
V
CE
=0V,V
GE
=20V
-
-
100
nA
Transconductance
g
fs
V
CE
=20V, I
C
=20A
-
11
-
S
Integrated gate resistor
R
Gint
-
Ω
Dynamic Characteristic
Input capacitance
C
iss
V
CE
=25V,
V
GE
=0V,
f=1MHz
-
1100
-
pF
Output capacitance
C
oss
-
71
-
Reverse transfer capacitance
C
rss
-
32
-
Gate charge
Q
Gate
V
CC
=480V, I
C
=20A
V
GE
=15V
-
120
-
nC
Internal emitter inductance
measured 5mm (0.197 in.) from case
L
E
PG-TO220-3
-
7
-
nH
Short circuit collector current
1)
I
C(SC )
V
GE
=15V,t
SC
5s
V
CC
= 400V,
T
j
150C
-
183.3
-
A
1
)
Allowed number of short circuits: <1000; time between short circuits: >1s.
IKP20N60T
TRENCHSTOP™ Series
IFAG IPC TD VLS
3
Rev. 2.8 18.05.2015
Switching Characteristic, Inductive Load, at T
j
=25 C
Parameter
Symbol
Conditions
Value
Unit
min.
Typ.
max.
IGBT Characteristic
Turn-on delay time
t
d(o n )
T
j
=25 C,
V
CC
=400V,I
C
=20A,
V
GE
=0/15V,r
G
=12 ,
L
=131nH,C
=31pF
L
, C
from Fig. E
Energy losses include
“tail” and diode reverse
recovery.
-
18
-
ns
Rise time
t
r
-
14
-
Turn-off delay time
t
d(of f )
-
199
-
Fall time
t
f
-
42
-
Turn-on energy
E
on
-
0.31
-
mJ
Turn-off energy
E
off
-
0.46
-
Total switching energy
E
ts
-
0.77
-
Anti-Parallel Diode Characteristic
Diode reverse recovery time
t
rr
T
j
=25C,
V
R
=400V, I
F
=20A,
di
F
/dt=880A/s
-
41
-
ns
Diode reverse recovery charge
Q
rr
-
0.31
-
µC
Diode peak reverse recovery current
I
rrm
-
13.3
-
A
Diode peak rate of fall of reverse
recovery current during t
b
di
rr
/dt
-
711
-
A/s
Switching Characteristic, Inductive Load, at T
j
=175 C
Parameter
Symbol
Conditions
Value
Unit
min.
Typ.
max.
IGBT Characteristic
Turn-on delay time
t
d(o n )
T
j
=175 C,
V
CC
=400V,I
C
=20A,
V
GE
=0/15V,r
G
=12 ,
L
=131nH,C
=31pF
L
, C
from Fig. E
Energy losses include
“tail” and diode reverse
recovery.
-
18
-
ns
Rise time
t
r
-
18
-
Turn-off delay time
t
d(of f )
-
223
-
Fall time
t
f
-
76
-
Turn-on energy
E
on
-
0.51
-
mJ
Turn-off energy
E
off
-
0.64
-
Total switching energy
E
ts
-
1.15
-
Anti-Parallel Diode Characteristic
Diode reverse recovery time
t
rr
T
j
=175C
V
R
=400V, I
F
=20A,
di
F
/dt=880A/s
-
176
-
ns
Diode reverse recovery charge
Q
rr
-
1.46
-
µC
Diode peak reverse recovery current
I
rrm
-
18.9
-
A
Diode peak rate of fall of reverse
recovery current during t
b
di
rr
/dt
-
467
-
A/s
P1-P3P4-P6P7-P9P10-P12P13-P13

IKP20N60TAHKSA1

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Buy IKP20N60TAHKSA1
Manufacturer:
Infineon Technologies
Description:
IGBT Transistors IGBT PRODUCTS
Lifecycle:
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