IKP20N60TAHKSA1

P1-P3 P4-P6 P7-P9 P10-P12 P13-P13

IKP20N60T

TRENCHSTOP™ Series

IFAG IPC TD VLS

4

Rev. 2.8 18.05.2015

I

C

, COLLECTOR CURRENT

10Hz 100Hz 1kHz 10kHz 100kHz

0A

10A

20A

30A

40A

50A

60A

T

C

=110°C

T

C

=80°C

I

C

, COLLECTOR CURRENT

1V 10V 100V 1000V

0.1A

1A

10A

10µs

1ms

DC

t

p

=2µs

50µs

10ms

f, SWITCHING FREQUENCY

V

CE

, COLLECTOR-EMITTER VOLTAGE

Figure 1. Collector current as a function of

switching frequency

(T

j

 175C, D = 0.5, V

CE

= 400V,

V

GE

= 0/15V, r

G

= 12)

Figure 2. Safe operating area

(D = 0, T

C

= 25C, T

j

175C;

V

GE

=0/15V)

P

tot

, POWER DISSIPATION

25°C 50°C 75°C 100°C 125°C 150°C

0W

20W

40W

60W

80W

100W

120W

140W

160W

I

C

, COLLECTOR CURRENT

25°C 50°C 75°C 100°C 125°C 150°C

0A

10A

20A

30A

40A

T

C

, CASE TEMPERATURE

T

C

, CASE TEMPERATURE

Figure 3. Power dissipation as a function

of case temperature

(T

j

 175C)

Figure 4. Collector current as a function of

case temperature

(V

GE

 15V, T

j

 175C)

I

c

I

c

IKP20N60T

TRENCHSTOP™ Series

IFAG IPC TD VLS

5

Rev. 2.8 18.05.2015

I

C

, COLLECTOR CURRENT

0V 1V 2V 3V

0A

10A

20A

30A

40A

50A

15V

7V

9V

11V

13V

V

GE

=20V

I

C

, COLLECTOR CURRENT

0V 1V 2V 3V 4V

0A

10A

20A

30A

40A

50A

15V

13V

7V

9V

11V

V

GE

=20V

V

CE

, COLLECTOR-EMITTER VOLTAGE

V

CE

, COLLECTOR-EMITTER VOLTAGE

Figure 5. Typical output characteristic

(T

j

= 25°C)

Figure 6. Typical output characteristic

(T

j

= 175°C)

I

C

, COLLECTOR CURRENT

0V 2V 4V 6V 8V

0A

5A

10A

15A

20A

25A

30A

35A

25°C

T

J

=175°C

V

CE(sat),

COLLECTOR-EMITT SATURATION VOLTAGE

0°C 50°C 100°C 150°C

0.0V

0.5V

1.0V

1.5V

2.0V

2.5V

I

C

=20A

I

C

=40A

I

C

=10A

V

GE

, GATE-EMITTER VOLTAGE

T

J

, JUNCTION TEMPERATURE

Figure 7. Typical transfer characteristic

(V

CE

=10V)

Figure 8. Typical collector-emitter

saturation voltage as a function

of junction temperature

(V

GE

= 15V)

IKP20N60T

TRENCHSTOP™ Series

IFAG IPC TD VLS

6

Rev. 2.8 18.05.2015

t, SWITCHING TIMES

0A 5A 10A 15A 20A 25A 30A 35A

1ns

10ns

100ns

t

r

t

d(on)

t

f

t

d(off)

t, SWITCHING TIMES

      

10ns

100ns

t

r

t

d(on)

t

f

t

d(off)

I

C

, COLLECTOR CURRENT

R

G

, GATE RESISTOR

Figure 9. Typical switching times as a

function of collector current

(inductive load, T

J

=175°C,

V

CE

= 400V, V

GE

= 0/15V, r

G

= 12Ω,

Dynamic test circuit in Figure E)

Figure 10. Typical switching times as a

function of gate resistor

(inductive load, T

J

= 175°C,

V

CE

= 400V, V

GE

= 0/15V, I

C

= 20A,

Dynamic test circuit in Figure E)

t, SWITCHING TIMES

25°C 50°C 75°C 100°C 125°C 150°C

10ns

100ns

t

r

t

d(on)

t

f

t

d(off)

V

GE(th),

GATE-EMITT TRSHOLD VOLTAGE

-50°C 0°C 50°C 100°C 150°C

0V

1V

2V

3V

4V

5V

6V

7V

min.

typ.

max.

T

J

, JUNCTION TEMPERATURE

T

J

, JUNCTION TEMPERATURE

Figure 11. Typical switching times as a

function of junction temperature

(inductive load, V

CE

= 400V,

V

GE

= 0/15V, I

C

= 20A, r

G

=12Ω,

Dynamic test circuit in Figure E)

Figure 12. Gate-emitter threshold voltage as

a function of junction

temperature

(I

C

= 0.29mA)

P1-P3 P4-P6 P7-P9 P10-P12 P13-P13

IKP20N60TAHKSA1

Mfr. #:

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Manufacturer:

Infineon Technologies

Description:

IGBT Transistors IGBT PRODUCTS

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