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IKP20N60TAHKSA1

P1-P3P4-P6P7-P9P10-P12P13-P13
IKP20N60T
TRENCHSTOP™ Series
IFAG IPC TD VLS
7
Rev. 2.8 18.05.2015
E, SWITCHING ENERGY LOSSES
0A 5A 10A 15A 20A 25A 30A 35A
0.0mJ
0.4mJ
0.8mJ
1.2mJ
1.6mJ
2.0mJ
2.4mJ
E
ts
*
E
off
*) E
on
and E
ts
include losses
due to diode recovery
E
on
*
E, SWITCHING ENERGY LOSSES
    
0.0mJ
0.4mJ
0.8mJ
1.2mJ
1.6mJ
2.0mJ
2.4mJ
E
ts
*
E
off
*) E
on
and E
ts
include losses
due to diode recovery
E
on
*
I
C
, COLLECTOR CURRENT
R
G
, GATE RESISTOR
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, T
J
= 175°C,
V
CE
= 400V, V
GE
= 0/15V, r
G
= 12Ω,
Dynamic test circuit in Figure E)
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, T
J
= 175°C,
V
CE
= 400V, V
GE
= 0/15V, I
C
= 20A,
Dynamic test circuit in Figure E)
E, SWITCHING ENERGY LOSSES
25°C 50°C 75°C 100°C 125°C 150°C
0.0mJ
0.2mJ
0.4mJ
0.6mJ
0.8mJ
1.0mJ
E
ts
*
E
off
*) E
on
and E
ts
include losses
due to diode recovery
E
on
*
E, SWITCHING ENERGY LOSSES
300V 350V 400V 450V 500V 550V
0.0mJ
0.2mJ
0.4mJ
0.6mJ
0.8mJ
1.0mJ
1.2mJ
1.4mJ
1.6mJ
1.8mJ
2.0mJ
E
ts
*
E
on
*
*) E
on
and E
ts
include losses
due to diode recovery
E
off
T
J
, JUNCTION TEMPERATURE
V
CE
, COLLECTOR-EMITTER VOLTAGE
Figure 15. Typical switching energy losses
as a function of junction
temperature
(inductive load, V
CE
= 400V,
V
GE
= 0/15V, I
C
= 20A, r
G
= 12Ω,
Dynamic test circuit in Figure E)
Figure 16. Typical switching energy losses
as a function of collector emitter
voltage
(inductive load, T
J
= 175°C,
V
GE
= 0/15V, I
C
= 20A, r
G
= 12Ω,
Dynamic test circuit in Figure E)
IKP20N60T
TRENCHSTOP™ Series
IFAG IPC TD VLS
8
Rev. 2.8 18.05.2015
V
GE
, GATE-EMITTER VOLTAGE
0nC 30nC 60nC 90nC 120nC
0V
5V
10V
15V
480V
120V
c, CAPACITANCE
0V 10V 20V 30V 40V
10pF
100pF
1nF
C
rss
C
oss
C
iss
Q
GE
, GATE CHARGE
V
CE
, COLLECTOR-EMITTER VOLTAGE
Figure 17. Typical gate charge
(I
C
=20 A)
Figure 18. Typical capacitance as a function
of collector-emitter voltage
(V
GE
=0V, f = 1 MHz)
I
C(sc)
, short circuit COLLECTOR CURRENT
12V 14V 16V 18V
0A
50A
100A
150A
200A
250A
300A
t
SC
, SHORT CIRCUIT WITHSTAND TIME
10V 11V 12V 13V 14V
0µs
2µs
4µs
6µs
8µs
10µs
12µs
V
GE
, GATE-EMITTETR VOLTAGE
V
GE
, GATE-EMITETR VOLTAGE
Figure 19. Typical short circuit collector
current as a function of gate-
emitter voltage
(V
CE
400V, T
j
150C)
Figure 20. Short circuit withstand time as a
function of gate-emitter voltage
(V
CE
=400V, start at T
J
=25°C,
T
Jmax
<150°C)
IKP20N60T
TRENCHSTOP™ Series
IFAG IPC TD VLS
9
Rev. 2.8 18.05.2015
Z
thJC
, TRANSIENT THERMAL IMPEDANCE
1µs 10µs 100µs 1ms 10ms 100ms
10
-2
K/W
10
-1
K/W
single pulse
0.01
0.02
0.05
0.1
0.2
D=0.5
Z
thJC
, TRANSIENT THERMAL IMPEDANCE
1µs 10µs 100µs 1ms 10ms 100ms
10
-2
K/W
10
-1
K/W
10
0
K/W
single pulse
0.01
0.02
0.05
0.1
0.2
D=0.5
t
P
, PULSE WIDTH
t
P
, PULSE WIDTH
Figure 21. IGBT transient thermal
impedance
(D = t
p
/ T)
Figure 22. Diode transient thermal
impedance as a function of pulse
width
(D=t
P
/T)
t
rr
, REVERSE RECOVERY TIME
600A/µs 900A/µs 1200A/µs
0ns
50ns
100ns
150ns
200ns
250ns
T
J
=25°C
T
J
=175°C
Q
rr
, REVERSE RECOVERY CHARGE
600A/µs 900A/µs 1200A/µs
0.2µC
0.4µC
0.6µC
0.8µC
1.0µC
1.2µC
1.4µC
1.6µC
1.8µC
T
J
=25°C
T
J
=175°C
di
F
/dt, DIODE CURRENT SLOPE
di
F
/dt, DIODE CURRENT SLOPE
Figure 23. Typical reverse recovery time as
a function of diode current slope
(V
R
=400V, I
F
=20A,
Dynamic test circuit in Figure E)
Figure 24. Typical reverse recovery charge
as a function of diode current
slope
(V
R
= 400V, I
F
= 20A,
Dynamic test circuit in Figure E)
R , ( K / W )
, ( s )
0.18715
6.925*10
-2
0.31990
1.085*10
-2
0.30709
6.791*10
-4
0.07041
9.59*10
-5
C
1
=
1
/R
1
R
1
R
2
C
2
=
2
/R
2
R , (K / W )
, ( s )
0.13483
9.207*10
-2
6.53*10
-2
0.58146
1.821*10
-2
0.44456
1.47*10
-3
0.33997
1.254*10
-4
C
1
=
1
/R
1
R
1
R
2
C
2
=
2
/R
2
P1-P3P4-P6P7-P9P10-P12P13-P13

IKP20N60TAHKSA1

Mfr. #:
Buy IKP20N60TAHKSA1
Manufacturer:
Infineon Technologies
Description:
IGBT Transistors IGBT PRODUCTS
Lifecycle:
New from this manufacturer.
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