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IKP20N60TAHKSA1

P1-P3P4-P6P7-P9P10-P12P13-P13
IKP20N60T
TRENCHSTOP™ Series
IFAG IPC TD VLS
10
Rev. 2.8 18.05.2015
I
rr
, REVERSE RECOVERY CURRENT
600A/µs 900A/µs 1200A/µs
0A
4A
8A
12A
16A
20A
24A
T
J
=25°C
T
J
=175°C
di
rr
/dt, DIODE PEAK RATE OF FALL
OF REVERSE RECOVERY CURRENT
600A/µs 900A/µs 1200A/µs
0A/µs
-150A/µs
-300A/µs
-450A/µs
-600A/µs
-750A/µs
T
J
=25°C
T
J
=175°C
di
F
/dt, DIODE CURRENT SLOPE
di
F
/dt, DIODE CURRENT SLOPE
Figure 25. Typical reverse recovery current
as a function of diode current
slope
(V
R
= 400V, I
F
= 20A,
Dynamic test circuit in Figure E)
Figure 26. Typical diode peak rate of fall of
reverse recovery current as a
function of diode current slope
(V
R
=400V, I
F
=20A,
Dynamic test circuit in Figure E)
I
F
, FORWARD CURRENT
0V 1V 2V
0A
10A
20A
30A
40A
50A
175°C
T
J
=25°C
V
F
, FORWARD VOLTAGE
0°C 50°C 100°C 150°C
0.0V
0.5V
1.0V
1.5V
2.0V
20A
I
F
=40A
10A
V
F
, FORWARD VOLTAGE
T
J
, JUNCTION TEMPERATURE
Figure 27. Typical diode forward current as
a function of forward voltage
Figure 28. Typical diode forward voltage as a
function of junction temperature
IKP20N60T
TRENCHSTOP™ Series
IFAG IPC TD VLS
11
Rev. 2.8 18.05.2015
PG-TO220-3
IKP20N60T
TRENCHSTOP™ Series
IFAG IPC TD VLS
12
Rev. 2.8 18.05.2015
I
r r m
90% I
r r m
10% I
r r m
di /dt
F
t
r r
I
F
i,v
t
Q
S
Q
F
t
S
t
F
V
R
di /dt
r r
Q =Q Q
r r S F
+
t =t t
r r S F
+
Figure C. Definition of diodes
switching characteristics
p(t)
1 2 n
T (t)
j
1
1
2
2
n
n
T
C
r r
r
r
rr
Figure D. Thermal equivalent
circuit
Figure A. Definition of switching times
Figure B. Definition of switching losses
P1-P3P4-P6P7-P9P10-P12P13-P13

IKP20N60TAHKSA1

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Buy IKP20N60TAHKSA1
Manufacturer:
Infineon Technologies
Description:
IGBT Transistors IGBT PRODUCTS
Lifecycle:
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