CY28409
Document #: 38-07445 Rev. *D Page 12 of 17
Absolute Maximum Conditions
Parameter Description Condition Min. Max. Unit
V
DD
Core Supply Voltage –0.5 4.6 V
V
DD_A
Analog Supply Voltage –0.5 4.6 V
V
IN
Input Voltage Relative to V
SS
–0.5 V
DD
+ 0.5 VDC
T
S
Temperature, Storage Non-functional –65 150 °C
T
A
Temperature, Operating Ambient Functional 0 70 °C
T
J
Temperature, Junction Functional – 150 °C
Ø
JC
Dissipation, Junction to Case Mil-Spec 883E Method 1012.1 – 15 °C/W
Ø
JA
Dissipation, Junction to Ambient JEDEC (JESD 51) – 45 °C/W
ESD
HBM
ESD Protection (Human Body Model) MIL-STD-883, Method 3015 2000 – V
UL–94 Flammability Rating @ 1/8 in. V–0
MSL Moisture Sensitivity Level 1
Multiple Supplies: The Voltage on any input or I/O pin cannot exceed the power pin during power-up. Power supply sequencing is NOT required.
DC Electrical Specifications
Parameter Description Condition Min. Max. Unit
VDD_A
,
VDD_REF,
VDD_PCI,
VDD_3V66,
VDD_48,
VDD_CPU
3.3V Operating Voltage 3.3 ± 5% 3.135 3.465 V
V
ILI2C
Input Low Voltage SDATA, SCLK – 1.0 V
V
IHI2C
Input High Voltage SDATA, SCLK 2.2 – V
V
IL
Input Low Voltage V
SS
– 0.5 0.8 V
V
IH
Input High Voltage 2.0 V
DD
+ 0.5 V
I
IL
Input Low Leakage Current except internal pull-ups resistors, 0 < V
IN
< V
DD
–5 µA
I
IH
Input High Leakage Current except internal pull-down resistors, 0 < V
IN
< V
DD
5 µA
V
OL
Output Low Voltage I
OL
= 1 mA – 0.4 V
V
OH
Output High Voltage I
OH
= –1 mA 2.4 – V
I
OZ
High-impedance Output Current –10 10 µA
I
DD
Dynamic Supply Current All outputs loaded per Table 9 and Figure 11 – 350 mA
C
IN
Input Pin Capacitance 2 5 pF
C
OUT
Output Pin Capacitance 3 6 pF
L
IN
Pin Inductance –7nH
V
XIH
Xin High Voltage 0.7V
DD
V
DD
V
V
XIL
Xin Low Voltage 0 0.3V
DD
V
I
PD3.3V
Power-down Supply Current PD# Asserted – 1 mA
AC Electrical Specifications
Parameter Description Condition Min. Max. Unit
Crystal
T
DC
XIN Duty Cycle The device will operate reliably with input duty
cycles up to 30/70 but the REF clock duty cycle
will not be within specification
47.5 52.5 %
T
PERIOD
XIN Period When XIN is driven from an external clock
source
69.841 71.0 ns
T
R
/ T
F
XIN Rise and Fall Times Measured between 0.3V
DD
and 0.7V
DD
– 10.0 ns
T
CCJ
XIN Cycle to Cycle Jitter As an average over 1-µs duration – 500 ps
L
ACC
Long-term Accuracy Over 150 ms 300 ppm
