OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

OP162GSZ-REEL7

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P20
OP162/OP262/OP462 Data Sheet
Rev. H | Page 4 of 20
@ V
S
= 3.0 V, V
CM
= 0 V, T
A
= 25°C, unless otherwise noted.
Table 2. Electrical Characteristics
Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS
Offset Voltage V
OS
OP162G, OP262G, OP462G 50 325 µV
G, H grades, –40°C ≤ T
A
≤ +125°C 1 mV
D grade
0.8
3
mV
–40°C ≤ T
A
≤ +125°C 5 mV
Input Bias Current I
B
360 600 nA
Input Offset Current I
OS
±2.5 ±25 nA
Input Voltage Range V
CM
0 2 V
Common-Mode Rejection
CMRR
0 V ≤ V
CM
≤ 2.0 V, –40°C ≤ T
A
≤ +125°C
70
110
dB
Large Signal Voltage Gain A
VO
R
L
= 2 kΩ, 0.5 V ≤ V
OUT
≤ 2.5 V 20 V/mV
R
L
= 10 kΩ, 0.5 V ≤ V
OUT
≤ 2.5 V 20 30 V/mV
Long-Term Offset Voltage
1
V
OS
G grade 600 µV
OUTPUT CHARACTERISTICS
Output Voltage Swing High V
OH
I
L
= 250 µA 2.95 2.99 V
I
L
= 5 mA 2.85 2.93 V
Output Voltage Swing Low V
OL
I
L
= 250 µA 14 50 mV
I
L
= 5 mA 66 150 mV
POWER SUPPLY
Power Supply Rejection Ratio PSRR V
S
= 2.7 V to 7 V,
–40°C ≤ T
A
≤ +125°C 60 110 dB
Supply Current/Amplifier I
SY
OP162, V
OUT
= 1.5 V 600 700 µA
–40°C ≤ T
A
≤ +125°C 1 mA
OP262, OP462, V
OUT
= 1.5 V 500 650 µA
–40°C ≤ T
A
≤ +125°C 850 µA
DYNAMIC PERFORMANCE
Slew Rate SR R
L
= 10 kΩ 10 V/µs
Settling Time t
S
To 0.1%, A
V
= –1, V
O
= 2 V step 575 ns
Gain Bandwidth Product GBP 15 MHz
Phase Margin
φ
m
59
Degrees
NOISE PERFORMANCE
Voltage Noise e
n
p-p 0.1 Hz to 10 Hz 0.5 µV p-p
Voltage Noise Density e
n
f = 1 kHz 9.5
nV/√
Hz
Current Noise Density i
n
f = 1 kHz 0.4
pA/√
Hz
1
Long-term offset voltage is guaranteed by a 1000 hour life test performed on three independent lots at 125°C, with an LTPD of 1.3.
Data Sheet OP162/OP262/OP462
Rev. H | Page 5 of 20
@ V
S
= ±5.0 V, V
CM
= 0 V, T
A
= 25°C, unless otherwise noted.
Table 3. Electrical Characteristics
Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS
Offset Voltage V
OS
OP162G, OP262G, OP462G 25 325 µV
−40°C ≤ T
A
≤ +125°C
800 µV
H grade, –40°C ≤ T
A
≤ +125°C 1 mV
D grade 0.8 3 mV
−40°C ≤ T
A
≤ +125°C
5 mV
Input Bias Current I
B
260 500 nA
−40°C ≤ T
A
≤ +125°C
650 nA
Input Offset Current I
OS
±2.5 ±25 nA
−40°C ≤ T
A
≤ +125°C
±40 nA
Input Voltage Range V
CM
–5 +4 V
Common-Mode Rejection CMRR
−4.9 V ≤ V
CM
≤ +4.0 V, –40°C ≤ T
A
≤ +125°C
70 110 dB
Large Signal Voltage Gain A
VO
R
L
= 2 kΩ, –4.5 V ≤ V
OUT
≤ +4.5 V 35 V/mV
R
L
= 10 kΩ, –4.5 V ≤ V
OUT
≤ +4.5 V 75 120 V/mV
−40°C ≤ T
A
≤ +125°C
25 V/mV
Long-Term Offset Voltage
1
V
OS
G grade 600 µV
Offset Voltage Drift
2
∆
V
OS
/
∆
T
1 µV/°C
Bias Current Drift
∆
I
B
/
∆
T
250 pA/°C
OUTPUT CHARACTERISTICS
Output Voltage Swing High V
OH
I
L
= 250 µA, –40°C ≤ T
A
≤ +125°C 4.95 4.99 V
I
L
= 5 mA 4.85 4.94 V
Output Voltage Swing Low V
OL
I
L
= 250 µA, –40°C ≤ T
A
≤ +125°C –4.99 –4.95 V
I
L
= 5 mA –4.94 –4.85 V
Short-Circuit Current I
SC
Short to ground ±80 mA
Maximum Output Current I
OUT
±30 mA
POWER SUPPLY
Power Supply Rejection Ratio PSRR V
S
= ±1.35 V to ±6 V,
−
40°C ≤ T
A
≤ +125°C
60
110
dB
Supply Current/Amplifier I
SY
OP162, V
OUT
= 0 V 650 800 µA
−40°C ≤ T
A
≤ +125°C
1.15 mA
OP262, OP462, V
OUT
= 0 V 550 775 µA
−40°C ≤ T
A
≤ +125°C
1 mA
Supply Voltage Range V
S
3.0 (±1.5) 12 (±6) V
DYNAMIC PERFORMANCE
Slew Rate SR
−4 V < V
OUT
< 4 V, R
L
= 10 kΩ
13 V/µs
Settling Time t
S
To 0.1%, A
V
= –1, V
O
= 2 V step 475 ns
Gain Bandwidth Product GBP 15 MHz
Phase Margin φ
m
64 Degrees
NOISE PERFORMANCE
Voltage Noise e
n
p-p 0.1 Hz to 10 Hz 0.5 µV p-p
Voltage Noise Density e
n
f = 1 kHz 9.5
nV/√
Hz
Current Noise Density i
n
f = 1 kHz 0.4
pA/√
Hz
1
Long-term offset voltage is guaranteed by a 1000 hour life test performed on three independent lots at +125°C, with an LTPD of 1.3.
2
Offset voltage drift is the average of the −40°C to +25°C delta and the +25°C to +125°C delta.
OP162/OP262/OP462 Data Sheet
Rev. H | Page 6 of 20
ABSOLUTE MAXIMUM RATINGS
Table 4.
Parameter Min
Supply Voltage ±6 V
Input Voltage
1
±6 V
Differential Input Voltage
2
±0.6 V
Internal Power Dissipation
SOIC (S) Observe Derating Curves
TSSOP (RU) Observe Derating Curves
Output Short-Circuit Duration Observe Derating Curves
Storage Temperature Range –65°C to +150°C
Operating Temperature Range –40°C to +125°C
Junction Temperature Range –65°C to +150°C
Lead Temperature Range
(Soldering, 10 sec) 300°C
1
For supply voltages greater than 6 V, the input voltage is limited to less than
or equal to the supply voltage.
2
For differential input voltages greater than 0.6 V, the input current should be
limited to less than 5 mA to prevent degradation or destruction of the input
devices.
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
Table 5.
Package Type
θ
JA
1
θ
JC
Unit
8-Lead SOIC (S) 157 56 °C/W
8-Lead TSSOP (RU) 208 °C/W
14-Lead SOIC (S) 105 °C/W
14-Lead TSSOP (RU) 148 °C/W
1
θ
JA
is specified for the worst-case conditions, that is, θ
JA
is specified for a
device soldered in circuit board for SOIC, and TSSOP packages.
ESD CAUTION
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P20

OP162GSZ-REEL7

Mfr. #:
Buy OP162GSZ-REEL7
Manufacturer:
Analog Devices Inc.
Description:
Operational Amplifiers - Op Amps 15 MHZ RR SGL IC
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet