MT8HTF3264AY-40EB3 Datasheet MT8HTF12864AY-1GAE1, MT8HTF12864AY-40EA1, MT8HTF12864AY-40ED1 | P1-P3

DDR2 SDRAM UDIMM

MT8HTF3264AY – 256MB

MT8HTF6464AY – 512MB

MT8HTF12864AY – 1GB

Features

•

240-pin, unbuffered dual in-line memory module

•

Fast data transfer rates: PC2-3200, PC2-4200,

PC2-5300, PC2-6400, or PC2-8500

•

256MB (32 Meg x 64), 512MB (64 Meg x 64),

or 1GB (128 Meg x 64

•

= V

DDQ

= 1.8V

•

DDSPD

= 1.7–3.6V

•

JEDEC-standard 1.8V I/O (SSTL_18-compatible)

•

Differential data strobe (DQS, DQS#) option

•

4n-bit prefetch architecture

•

Multiple internal device banks for concurrent

operation

•

Programmable CAS latency (CL)

•

Posted CAS additive latency (AL)

•

WRITE latency = READ latency - 1

•

Programmable burst lengths (BL): 4 or 8

•

Adjustable data-output drive strength

•

64ms, 8192-cycle refresh

•

On-die termination (ODT)

•

Serial presence detect (SPD) with EEPROM

•

Gold edge contacts

•

Single rank

Figure 1: 240-Pin UDIMM (MO-237 R/C A and D)

PCB height: 30.0mm (1.18in)

Options Marking

•

Operating temperature

– Commercial (0°C ≤ T

≤ +70°C)

None

– Industrial (–40°C ≤ T

≤ +85°C)

•

Package

–

240-pin DIMM (lead-free) Y

•

Frequency/CL

–

1.875ns @ CL = 7 (DDR2-1066)

-1GA

–

2.5ns @ CL = 5 (DDR2-800) -80E

–

2.5ns @ CL = 6 (DDR2-800) -800

–

3.0ns @ CL = 5 (DDR2-667) -667

–

3.75ns @ CL = 4 (DDR2-533)

-53E

–

5.0ns @ CL = 3 (DDR2-400) -40E

Notes:

1. Contact Micron for industrial temperature

module offerings.

2. CL = CAS (READ) latency.

3. Available only in 1GB, Rev. E devices.

4. Not recommended for new designs.

Table 1: Key Timing Parameters

Speed

Grade

Industry

Nomenclature

Data Rate (MT/s) t

RCD

(ns)

(ns)CL = 7 CL = 6 CL = 5 CL = 4 CL = 3

-1GA PC2-8500 1066 800 667 533 400 13.125 13.125 58.125

-80E PC2-6400 800 800 533 400 12.5 12.5 57.5

-800 PC2-6400 800 667 533 400 15 15 60

-667 PC2-5300

–

667 553 400 15 15 60

-53E PC2-4200

– –

553 400 15 15 55

-40E PC2-3200

– –

400 400 15 15 55

256MB, 512MB, 1GB (x64, SR) 240-Pin DDR2 SDRAM UDIMM

Features

PDF: 09005aef80e2ff8d

htf8c32_64_128x64aypdf - Rev. G 3/10 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

Products and specifications discussed herein are subject to change by Micron without notice.

Table 2: Addressing

Parameter 256MB 512MB 1GB

Refresh count 8K 8K 8K

Row address 16K A[12:0] 16K A[13:0] 16K A[13:0]

Device bank address 4 BA[2:0] 4 BA[2:0] 8 BA[3:0]

Device configuration 256Mb (32 Meg x 8) 512Mb (64 Meg x 8) 1Gb (128 Meg x 8)

Column address 1K A[9:0] 1K A[9:0] 1K A[9:0]

Module rank address 1 S0# 1 S0# 1 S0#

Table 3: Part Numbers and Timing Parameters – 256MB Modules (End of Life)

Base device: MT47H32M8,

256Mb DDR2 SDRAM

Part Number

Module

Density Configuration

Module

Bandwidth

Memory Clock/

Data Rate

Clock Cycles

(CL-

RCD-

RP)

MT8HTF3264A(I)Y-667__ 256MB 32 Meg x 64 5.3 GB/s 3.0ns/667 MT/s 5-5-5

MT8HTF3264A(I)Y-53E__ 256MB 32 Meg x 64 4.3 GB/s 3.75ns/533 MT/s 4-4-4

MT8HTF3264A(I)Y-40E__ 256MB 32 Meg x 64 3.2 GB/s 5.0ns/400 MT/s 3-3-3

Table 4: Part Numbers and Timing Parameters – 512MB Modules

Base device: MT47H64M8,

512Mb DDR2 SDRAM

Part Number

Module

Density Configuration

Module

Bandwidth

Memory Clock/

Data Rate

Clock Cycles

(CL-

RCD-

RP)

MT8HTF6464A(I)Y-80E__ 512MB 64 Meg x 64 6.2 GB/s 2.5ns/800 MT/s 5-5-5

MT8HTF6464A(I)Y-800__ 512MB 64 Meg x 64 6.2 GB/s 2.5ns/800 MT/s 6-6-6

MT8HTF6464A(I)Y-667__ 512MB 64 Meg x 64 5.3 GB/s 3.0ns/667 MT/s 5-5-5

MT8HTF6464A(I)Y-53E__ 512MB 64 Meg x 64 4.3 GB/s 3.75ns/533 MT/s 4-4-4

MT8HTF6464A(I)Y-40E__ 512MB 64 Meg x 64 3.2 GB/s 5.0ns/400 MT/s 3-3-3

256MB, 512MB, 1GB (x64, SR) 240-Pin DDR2 SDRAM UDIMM

Features

PDF: 09005aef80e2ff8d

htf8c32_64_128x64aypdf - Rev. G 3/10 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

Table 5: Part Numbers and Timing Parameters – 1GB Modules

Base device: MT47H128M8,

1Gb DDR2 SDRAM

Part Number

Module

Density Configuration

Module

Bandwidth

Memory Clock/

Data Rate

Clock Cycles

(CL-

RCD-

RP)

MT8HTF12864A(I)Y-1GA__ 1GB 128 Meg x 64 8.5 GB/s 1.875ns/1066 MT/s 7-7-7

MT8HTF12864A(I)Y-80E__ 1GB 128 Meg x 64 6.2 GB/s 2.5ns/800 MT/s 5-5-5

MT8HTF12864A(I)Y-800__ 1GB 128 Meg x 64 6.2 GB/s 2.5ns/800 MT/s 6-6-6

MT8HTF12864A(I)Y-667__ 1GB 128 Meg x 64 5.3 GB/s 3.0ns/667 MT/s 5-5-5

MT8HTF12864A(I)Y-53E__ 1GB 128 Meg x 64 4.3 GB/s 3.75ns/533 MT/s 4-4-4

MT8HTF12864A(I)Y-40E__ 1GB 128 Meg x 64 3.2 GB/s 5.0ns/400 MT/s 3-3-3

Notes:

1. The data sheet for the base device can be found on Micron’s Web site.

2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions.

Consult factory for current revision codes. Example: MT8HTF12864AY-667E1.

256MB, 512MB, 1GB (x64, SR) 240-Pin DDR2 SDRAM UDIMM

Features

PDF: 09005aef80e2ff8d

htf8c32_64_128x64aypdf - Rev. G 3/10 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

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MT8HTF3264AY-40EB3

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Manufacturer:

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Description:

MODULE DDR2 SDRAM 256MB 240UDIMM

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MT8HTF3264AY-40EB3

MT8HTF3264AY-40EB3

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