6.42
IDT70T3509M
High-Speed 2.5V 1024K x 36 Dual-Port Synchronous Static RAM Commercial Temperature Range
7
Absolute Maximum Ratings
(1)
Symbol Rating Com'l
& Ind
Unit
V
TERM
(VDD)
V
DD Terminal Voltage
with Respect to GND
-0.5 to 3.6 V
V
TERM
(2)
(VDDQ)
V
DDQ Terminal Voltage
with Respect to GND
-0.3 to VDDQ + 0.3 V
V
TE RM
(2)
(INPUTS and I/O's)
Input and I/O Terminal
Voltage with Respect to GND
-0.3 to V
DDQ + 0.3 V
T
BIAS
(3)
Temperature Under Bias -55 to +125
o
C
TSTG Storage Temperature -65 to +150
o
C
TJN Junction Temperature +150
o
C
IOUT(For V
DDQ
=
3.3V) DC Output Current 50 mA
I
OUT(For V
DDQ
=
2.5V) DC Output Current 40 mA
5682 tbl 06
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation of the
device at these or any other conditions above those indicated in the operational sections
of this specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
2. This is a steady-state DC parameter that applies after the power supply has reached its
nominal operating value. Power sequencing is not necessary; however, the voltage on
any Input or I/O pin cannot exceed V
DDQ during power supply ramp up.
3. Ambient Temperature under DC Bias. No AC Conditions. Chip Deselected.
NOTES:
1. These parameters are determined by device characterization, but are not
production tested.
2. C
OUT also references CI/O.
Capacitance
(1)
(TA = +25°C, F = 1.0MHZ) BGA ONLY
Symbol Parameter Conditions Max. Unit
C
IN
Input Capacitance V
IN
= 0V 35 pF
C
OUT
(2)
Output Capacitance V
OUT
= 0V 35 pF
5682 tbl 07
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range
(VDD = 2.5V ± 100mV)
Symbol Parameter Test Conditions
70T3509MS
UnitMin. Max.
|I
LI
| Input Leakage Current
(1)
V
DDQ
= Max., V
IN
= 0V to V
DDQ
___
20 µA
|I
LI
| JTAG & ZZ Input Leakage Current
(1,2)
V
DD =
Max.
,
V
IN
= 0V to V
DD
___
60 µA
|I
LO
| Output Leakage Current
(1,3)
CE
0
= V
IH
and CE
1
= V
IL
, V
OUT
= 0V to V
DDQ
___
20 µA
V
OL
(3.3V) Output Low Voltage
(1)
I
OL
= +4mA, V
DDQ
= Min.
___
0.4 V
V
OH
(3.3V) Output High Voltage
(1)
I
OH
= -4mA, V
DDQ
= Min. 2.4
___
V
V
OL
(2.5V) Output Low Voltage
(1)
I
OL
= +2mA, V
DDQ
= Min.
___
0.4 V
V
OH
(2.5V) Output High Voltage
(1)
I
OH
= -2mA, V
DDQ
= Min. 2.0
___
V
5682 tbl 08
NOTES:
1. V
DDQ is selectable (3.3V/2.5V) via OPT pins. Refer to p.5 for details.
2. Applicable only for TMS, TDI and TRST inputs.
3. Outputs tested in tri-state mode.
