M48T58, M48T58Y Clock operations
Doc ID 2412 Rev 8 19/33
6.5 Battery low flag
The M48T58/Y automatically performs periodic battery voltage monitoring upon power-up.
The battery low flag (BL), bit D6 of the flags register 1FFDh, will be asserted high if the
internal or SNAPHAT
®
battery is found to be less than approximately 2.5 V and the battery
low enable (BLE) bit has been previously set to '1.' The BL flag will remain active until
completion of battery replacement and subsequent battery low monitoring tests.
If a battery low is generated during a power-up sequence, this indicates that the battery
voltage is below 2.5 V (approximately), which may be insufficient to maintain data integrity.
Data should be considered suspect and verified as correct. A fresh battery should be
installed.
The SNAPHAT top may be replaced while V
CC
is applied to the device.
Note: This will cause the clock to lose time during the interval the SNAPHAT
®
battery/crystal top is
disconnected.
Note: Battery monitoring is a useful technique only when performed periodically. The M48T58/Y
only monitors the battery when a nominal V
CC
is applied to the device. Thus applications
which require extensive durations in the battery back-up mode should be powered-up
periodically (at least once every few months) in order for this technique to be beneficial.
Additionally, if a battery low is indicated, data integrity should be verified upon power-up via
a checksum or other technique.
6.6 Century bit
Bit D5 and D4 of clock register 1FFCh contain the CENTURY ENABLE bit (CEB) and the
CENTURY bit (CB). Setting CEB to a '1' will cause CB to toggle, either from a '0' to '1' or
from '1' to '0' at the turn of the century (depending upon its initial state). If CEB is set to a '0,'
CB will not toggle.
Note: The WRITE bit must be set in order to write to the CENTURY bit.
Clock operations M48T58, M48T58Y
20/33 Doc ID 2412 Rev 8
6.7 V
CC
noise and negative going transients
I
CC
transients, including those produced by output switching, can produce voltage
fluctuations, resulting in spikes on the V
CC
bus. These transients can be reduced if
capacitors are used to store energy which stabilizes the V
CC
bus. The energy stored in the
bypass capacitors will be released as low going spikes are generated or energy will be
absorbed when overshoots occur. A bypass capacitor value of 0.1 µF (as shown in
Figure 10) is recommended in order to provide the needed filtering.
In addition to transients that are caused by normal SRAM operation, power cycling can
generate negative voltage spikes on V
CC
that drive it to values below V
SS
by as much as
one volt. These negative spikes can cause data corruption in the SRAM while in battery
backup mode. To protect from these voltage spikes, it is recommended to connect a
Schottky diode from V
CC
to V
SS
(cathode connected to V
CC
, anode to V
SS
). Schottky diode
1N5817 is recommended for through hole and MBRS120T3 is recommended for surface
mount.
Figure 10. Supply voltage protection
AI02169
V
CC
0.1µF DEVICE
V
CC
V
SS
M48T58, M48T58Y Maximum ratings
Doc ID 2412 Rev 8 21/33
7 Maximum ratings
Stressing the device above the rating listed in the absolute maximum ratings table may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the operating sections of
this specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect device reliability.
Table 6. Absolute maximum ratings
Caution: Negative undershoots below –0.3 V are not allowed on any pin while in the battery backup
mode.
Caution: Do NOT wave solder SOIC to avoid damaging SNAPHAT
®
sockets.
Symbol Parameter Value Unit
T
A
Ambient operating temperature 0 to 70 °C
T
STG
Storage temperature (V
CC
off, oscillator off) –40 to 85 °C
T
SLD
(1)(2)(3)
1. For DIP package, soldering temperature of the IC leads is to not exceed 260 °C for 10 seconds.
Furthermore, the devices shall not be exposed to IR reflow nor preheat cycles (as performed as part of
wave soldering). ST recommends the devices be hand-soldered or placed in sockets to avoid heat
damage to the batteries.
2. For DIP packaged devices, ultrasonic vibrations should not be used for post-solder cleaning to avoid
damaging the crystal.
3. For SOH28 package, lead-free (Pb-free) lead finish: reflow at peak temperature of 260°C (the time above
255°C must not exceed 30 seconds).
Lead solder temperature for 10 seconds 260 °C
V
IO
Input or output voltages –0.3 to 7 V
V
CC
Supply voltage –0.3 to 7 V
I
O
Output current 20 mA
P
D
Power dissipation 1 W

M48T58Y-70PC1

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
Real Time Clock 64K (8Kx8) 70ns
Lifecycle:
New from this manufacturer.
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