M48T58, M48T58Y Description
Doc ID 2412 Rev 8 7/33
Figure 4. Block diagram
AI01377C
LITHIUM
CELL
OSCILLATOR AND
CLOCK CHAIN
V
PFD
FT
V
CC
V
SS
32,768 Hz
CRYSTAL
VOLTAGE SENSE
AND
SWITCHING
CIRCUITRY
8 x 8 BiPORT
SRAM ARRAY
8184 x 8
SRAM ARRAY
A0-A12
DQ0-DQ7
E1
E2
W
G
POWER
Operation modes M48T58, M48T58Y
8/33 Doc ID 2412 Rev 8
2 Operation modes
As Figure 4 on page 7 shows, the static memory array and the quartz controlled clock
oscillator of the M48T58/Y are integrated on one silicon chip. The two circuits are
interconnected at the upper eight memory locations to provide user accessible
BYTEWIDE™ clock information in the bytes with addresses 1FF8h-1FFFh. The clock
locations contain the century, year, month, date, day, hour, minute, and second in 24 hour
BCD format (except for the century). Corrections for 28, 29 (leap year - valid until 2100), 30,
and 31 day months are made automatically. Byte 1FF8h is the clock control register. This
byte controls user access to the clock information and also stores the clock calibration
setting.
The eight clock bytes are not the actual clock counters themselves; they are memory
locations consisting of BiPORT™ READ/write memory cells. The M48T58/Y includes a
clock control circuit which updates the clock bytes with current information once per second.
The information can be accessed by the user in the same manner as any other location in
the static memory array.
The M48T58/Y also has its own power-fail detect circuit. The control circuitry constantly
monitors the single 5 V supply for an out-of-tolerance condition. When V
CC
is out of
tolerance, the circuit write protects the SRAM, providing a high degree of data security in the
midst of unpredictable system operation brought on by low V
CC
. As V
CC
falls below the
battery backup switchover voltage (V
SO
), the control circuitry connects the battery which
maintains data and clock operation until valid power returns.
Table 2. Operating modes
Note: X = V
IH
or V
IL
; V
SO
= Battery backup switchover voltage.
Mode V
CC
E1 E2 G W DQ0-DQ7 Power
Deselect
4.75 to 5.5 V
or
4.5 to 5.5 V
V
IH
XXXHigh Z Standby
Deselect X V
IL
X X High Z Standby
WRITE V
IL
V
IH
XV
IL
D
IN
Active
READ V
IL
V
IH
V
IL
V
IH
D
OUT
Active
READ V
IL
V
IH
V
IH
V
IH
High Z Active
Deselect
V
SO
to V
PFD
(min)
(1)
1. See Table 11 on page 24 for details.
X X X X High Z CMOS standby
Deselect V
SO
(1)
X X X X High Z Battery backup mode
M48T58, M48T58Y READ mode
Doc ID 2412 Rev 8 9/33
3 READ mode
The M48T58/Y is in the READ mode whenever W (WRITE enable) is high, E1 (chip enable
1) is low, and E2 (chip enable 2) is high. The unique address specified by the 13 address
inputs defines which one of the 8,192 bytes of data is to be accessed. Valid data will be
available at the data I/O pins within address access time (t
AVQV
) after the last address input
signal is stable, providing that the E1
, E2, and G access times are also satisfied. If the E1,
E2 and G
access times are not met, valid data will be available after the latter of the chip
enable access times (t
E1LQV
or t
E2HQV
) or output enable access time (t
GLQV
).
The state of the eight three-state data I/O signals is controlled by E1
, E2 and G. If the
outputs are activated before t
AVQV
, the data lines will be driven to an indeterminate state
until t
AVQV
. If the address inputs are changed while E1, E2 and G remain active, output data
will remain valid for output data hold time (t
AXQX
) but will go indeterminate until the next
address access.
Figure 5. READ mode AC waveforms
Note: WRITE enable (W
) = high.
AI00962
tAVAV
tAVQV tAXQX
tE1LQV
tE1LQX
tE1HQZ
tGLQV
tGLQX
tGHQZ
VALID
A0-A12
E1
G
DQ0-DQ7
tE2HQV
tE2HQX
VALID
tE2LQZ
E2

M48T58Y-70PC1

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
Real Time Clock 64K (8Kx8) 70ns
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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