LTC3863
25
3863fa
For more information www.linear.com/3863
Next choose a P-channel MOSFET with the appropriate
BV
DSS
and I
D
rating. The BV
DSS
rating should be greater
than (55V + 5V + V
D
) with sufficient margin. In this ex-
ample, a good choice is the Vishay Si7469DP (BV
DSS
=
80V, I
D
= 10A, R
DS(ON)
= 30mΩ, ρ
100°C
= 1.8, V
MILLER
=
3.2V, C
MILLER
= 235pF, θ
JA
= 24°C/W). The highest power
dissipation and the resulting junction temperature for the
P-channel MOSFET occurs at the minimum V
IN
of 5V and
maximum output current of 1.8A. They can be calculated
at T
A
= 70°C as follows:
D=
5V + 0.5V
4.5V + 5V + 0.5V
0.55
P
PMOS
= 0.55
1.8A
1–0.55
2
1.8 30m
+
320kHz 235pF 4.5V+ |–5V|+0.5V
( )
2
2
1.8A
1–0.55
( )
0.9
4.5V 3.2V
+
2
3.2V
0.475W + 0.020W 0.495W
T
J
= 70°C + 0.495W • 24°C/W = 82°C
The same calculations can be repeated for V
IN(MAX)
= 55V:
D=
5V + 0.5V
55V + 5V + 0.5V
0.091
P
PMOS
0.091
1.8A
1–0.091
2
1.8 30m
+
320kHz 235pF 55V+ |–5V|+0.5V
( )
2
2
1.8A
1–0.091
( )
0.9
5V 3.2V
+
2
3.2V
0.019W + 0.39W 0.411W
T
J
= 70°C + 0.411W • 24°C/W = 80°C
Next choose an appropriate Schottky diode that will handle
the power requirements. The reverse voltage of the diode,
V
R
, should be greater than (55V + 5V). The Fairchild
S38 Schottky diode is selected (V
F
(3A,125°C) = 0.45V,
V
R
= 80V, θ
JA
= 55°C/W) for this application. The power
dissipation and junction temperature at T
A
= 70° and full
load = 1.8A can be calculated as:
P
DIODE
= 1.8A • 0.45V = 0.81W
T
J
= 70°C + 0.81W • 55°C/W = 114°C
These power dissipation calculations show that careful
attention to heat sinking will be necessary.
For the input bypass capacitors, choose low ESR ceramic
capacitors that can handle the maximum RMS current at
the minimum V
IN
of 4.5V:
I
CIN(RMS)
1.8A
|–5V|
4.5V
= 1.9A
C
OUT
will be selected based on the ESR that is required
to satisfy the output voltage ripple requirement. For this
design, two 47μF ceramic capacitors are chosen to offer
low ripple in both normal operation and in Burst Mode
operation.
The selected C
OUT
must support the maximum RMS
operating current at a minimum V
IN
of 4.5V:
I
CIN(RMS)
1.8A
|–5V|
4.5V
= 1.9A
A soft-start time of 8ms can be programmed through a
0.1μF capacitor on the SS pin:
C
SS
=
8ms 10µA
0.8V
= 0.1µF
Loop compensation components on the ITH pin are chosen
based on load step transient behavior (as described under
OPTI-LOOP Compensation) and is optimized for stability. A
pull-up resistor is used on the RUN pin for FMEA compli
-
ance (see Failure Modes and Effects Analysis).
applicaTions inForMaTion
LTC3863
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applicaTions inForMaTion
An application with complementary dual outputs of ±5V
can be designed by using two LTC3863 parts with one
configured into an inverting regulator and the other into
a step-down buck regulator as shown in Figure11. Refer
to LTC3864 data sheet for the actual design of a buck
output of 5V.
Gate Driver Component Placement,
Layout and Routing
It
is important to follow recommended power supply PC
board layout practices such as placing external power ele
-
ments to minimize loop area and inductance in switching
paths. Be careful to pay particular attention to gate driver
component placement, layout and routing.
The effective C
CAP
capacitance should be greater than
0.1µF minimum in all operating conditions. Operating
voltage and temperature both decrease the rated capaci
-
tance to varying degrees depending on dielectric type. The
LTC3863 is a PMOS controller with an internal gate driver
and boot-strapped LDO that regulates the differential CAP
voltage (V
IN
V
CAP
) to 8V nominal. The C
CAP
capacitance
needs to be large enough to assure stability and provide
cycle-to-cycle current to the PMOS switch with minimum
series inductance. We recommend a ceramic 0.47µF 16V
capacitor with a high quality dielectric
such as X5R or
X7R.
Some high current applications with large Qg PMOS
switches may benefit from an even larger C
CAP
capacitance.
Figure 8 shows the LTC3863 Generic Application Sche-
matic which
includes an optional current sense filter and
series
gate resistor. Figure 9 illustrates the recommended
gate driver component placement, layout and routing of
the GATE, V
IN
, SENSE and CAP pins and key gate driver
components. It is recommended that the gate driver layout
follow the example shown in Figure 9 to assure proper
operation and long term reliability.
The LTC3863 gate driver should connect to the external
power elements in the following manner. First route the
V
IN
pin using a single low impedance isolated trace to
the positive R
SENSE
resistor PAD without connection to
the V
IN
plane. The reason for this precaution is that the
C
SF
L1
Q1
D1
CAP
C
CAP
PGND
LTC3863
3863 F08
SS
ITH
FREQ
SGND
GROUND
PLANE
TO PGND
RUN
V
IN
PLLIN/MODE
SENSE
GATE
V
FBN
V
FB
R
ITH
R
SF
R
SENSE
R
GATE
R
FREQ
R
FB1
R
FB2
V
OUT
V
IN
C
IN
+
C
ITH
C
PITH
C
INB
C
SS
C
OUT
C
FB2
Figure 8: LTC3863 Generic Application Schematic with Optional
Current Sense Filter and Series Gate Resistor
R
GATE
TO Q1 GATE
TO R
SENSE
+
3863 F09
C
INB
C
CAP
GATE
SENSE
CAP
V
IN
C
SF
R
SF
TO R
SENSE
Figure 9: LTC3863 Recommended Gate Driver PC Board
Placement, Layout and Routing
V
IN
pin is internally Kelvin connected to the current sense
comparator, internal V
IN
power and the PMOS gate driver.
Connecting the V
IN
pin to the V
IN
power plane adds noise
and can result in jitter or instability. Figure 9 shows a single
V
IN
trace from the positive R
SENSE
pad connected to C
SF
,
C
CAP
, V
IN
pad and C
INB
. The total trace length to R
SENSE
should be minimized and the capacitors C
CF
, C
CAP
and
C
INB
should be placed near the V
IN
pin of the LTC3863.
C
CAP
should be placed near the V
IN
and CAP pins. Figure 9
shows C
CAP
placed adjacent to the V
IN
and CAP pins with
LTC3863
27
3863fa
For more information www.linear.com/3863
applicaTions inForMaTion
SENSE routed between the pads. This is the recommended
layout and results in the minimum parasitic inductance.
The gate driver is capable of providing high peak current.
Parasitic inductance in the gate drive and the series in
-
ductance between
V
IN
to CAP can cause a voltage spike
between V
IN
and CAP on each switching cycle. The voltage
spike can result in electrical over-stress to the gate driver
and can result in gate driver failures in extreme cases. It
is recommended to follow the example shown in Figure 9
for the placement of C
CAP
as close as is practical.
R
GATE
resistor pads can be added with aresistor to
allow the damping resistor to be added later. The total
length of the gate drive trace to the PMOS gate should
be minimized and ideally be less than 1cm. In most cases
with a good layout the R
GATE
resistor is not needed. The
R
GATE
resistor should be located near the gate pin to re-
duce peak current through GATE and minimize reflected
noise on the gate pin.
The
R
SF
and C
SF
pads can be added with a zero ohm resis-
tor for R
SF
and C
SF
not populated. In most applications,
external filtering is not needed. The current sense filter
R
SF
and C
SF
can be added later if noise if demonstrated
to be a problem.
The bypass capacitor C
INB
is used to locally filter the
V
IN
supply. C
INB
should be tied to the V
IN
pin trace and
to the PGND exposed pad. The C
INB
positive pad should
connect to R
SENSE
positive though the V
IN
pin trace. The
C
INB
ground trace should connect to the PGND exposed
pad connection.
PC Board Layout Checklist
When laying out the printed circuit board, the following
checklist should be used to ensure proper operation of
the LTC3863.
1. Multilayer boards with dedicated ground layers are
preferable for reduced noise and for heat sinking pur
-
poses. Use
wide rails and/or entire planes for V
IN
, V
OUT
and GND for good filtering and minimal copper loss. If
a ground layer is used, then it should be immediately
below (and/or above) the routing layer for the power
train components which consist of C
IN
, sense resistor,
P-channel MOSFET, Schottky diode, inductor, and C
OUT
.
Flood unused areas of all layers with copper for better
heat sinking.
2.
Keep signal and power grounds separate except at the
point where they are shorted together. Short the signal
and power ground together only at a single point with a
narrow PCB trace (or single via in a multilayer board).
All power train components should be referenced to
power ground and all small-signal components (e.g.,
C
ITH1
, R
FREQ
, C
SS
etc.) should be referenced to the
signal ground.
3. Place C
IN
, sense resistor, P-channel MOSFET, induc-
tor, and primary C
OUT
capacitors close together in
one compact area. The junction connecting the drain
of the P-channel MOSFET, cathode of the Schottky,
and (+) terminal of the inductor (this junction is com
-
monly referred
to as switch or phase node) should be
compact but be large enough to handle the inductor
currents without large copper losses. Place the sense
resistor and source of P-channel MOSFET as close
as possible to the (+) plate of the C
IN
capacitor(s)
that provides the bulk of the AC current (these are
normally the ceramic capacitors), and connect the (–)
terminal of the inductor as close as possible to the
(–) terminal of the same C
IN
capacitor(s). The high
dI/dt loop formed by C
IN
, the MOSFET, and the Schottky
diode should have short leads and PCB trace lengths to
minimize high frequency EMI and voltage stress from
inductive ringing. The (+) terminal of the primary C
OUT
capacitor(s) which filter the bulk of the inductor ripple
current (these are normally the ceramic capacitors)
should also be connected close to the (–) terminal of C
IN
.
4. Place Pins 7 to 12 facing the power train components.
Keep high dV/dt signals on GATE and switch away from
sensitive small-signal traces and components.
5. Place the sense resistor close to the (+) terminal of C
IN
and source of P-channel MOSFET. Use a Kelvin (4-wire)
connection across the sense resistor and route the traces
together as a differential pair into the V
IN
and SENSE
pins. An optional RC filter could be placed near the V
IN
and SENSE pins to filter the current sense signal.

LTC3863IDE#PBF

Mfr. #:
Manufacturer:
Analog Devices / Linear Technology
Description:
Switching Voltage Regulators 60V Low IQ Inverting Buck-Boost DC/DC PMOS Controller
Lifecycle:
New from this manufacturer.
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