IP4856CX25_C All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 2 — 15 October 2014 6 of 21
NXP Semiconductors
IP4856CX25/C
SD 3.0-compliant memory card integrated dual voltage level translator
8.2 Enable and direction control
The pin ENABLE enables/disables the internal Low DropOut (LDO) regulator and is used
to put the host-side and card-side I/O drivers into high-ohmic (3-state) mode.
[1] H = HIGH; L = LOW; X = don’t care.
8.3 Integrated voltage regulator
The low dropout voltage regulator delivers supply voltage for the voltage translators and
the card-side input/output stages. It has to support 1.8 V and 3 V signaling modes as
stipulated in the SD 3.0 specification. The switching time between the two output voltage
modes is compliant with SD 3.0 specification. Depending on the signaling level at pin
SEL, the regulator delivers 1.8 V (SEL = HIGH) or 2.9 V (SEL = LOW, V
SD_REF
<1 V). For
card supply voltage, see Section 8.4
.
[1] H = HIGH; L = LOW; X = don’t care.
[2] Host-side pins are not influenced by SEL.
Table 5. I/O function control signal truth table
Control Host side Memory card side
Pin Level
[1]
Pin Function Pin Function
Pin ENABLE = HIGH and V
CCA
1.62 V
DIR_CMD H CMD_H input CMD_SD output
L CMD_H output CMD_SD input
DIR_0 H DATA0_H input DATA0_SD output
L DATA0_H output DATA0_SD input
DIR_1_3 H DATA1_H
DATA2_H
DATA3_H
input DATA1_SD
DATA2_SD
DATA3_SD
output
LDATA1_H
DATA2_H
DATA3_H
output DATA1_SD
DATA2_SD
DATA3_SD
input
- - CLK_IN input CLK_SD output
- - CLK_FB output - -
Pin ENABLE = LOW or V
CCA
0.8 V
DIR_CMD X CMD_H high-ohmic CMD_SD high-ohmic
DIR_0 X DATA0_H high-ohmic DATA0_SD high-ohmic
DIR_1_3 X DATA1_H
DATA2_H
DATA3_H
high-ohmic DATA1_SD
DATA2_SD
DATA3_SD
high-ohmic
- - CLK_IN input CLK_SD high-ohmic
- - CLK_IN high-ohmic - -
Table 6. SD card side voltage level control signal truth table
Input Output
SEL
[1]
V
SD_REF
[1]
V
LDO
Pin
[2]
Function
H X 1.8 V DATA0_SD to DATA3_SD, CLK_SD low supply voltage level (1.8 V typical)
L < 1 V 2.9 V DATA0_SD to DATA3_SD, CLK_SD high supply voltage level (2.9 V typical)
>1.5V V
SD_REF
DATA0_SD to DATA3_SD, CLK_SD supply voltage level based on V
SD_REF
IP4856CX25_C All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 2 — 15 October 2014 7 of 21
NXP Semiconductors
IP4856CX25/C
SD 3.0-compliant memory card integrated dual voltage level translator
An external capacitor is needed between the regulator output pin V
LDO
and ground for
proper operation of the integrated voltage regulator. See Table 8
for recommended
capacitance and equivalent series resistance. To place the capacitor close to the V
LDO
pin
and maintain short connections to both, to the V
LDO
and to the ground, is recommended.
8.4 Memory card voltage tracking (reference select)
The device can track the memory card supply via pin V
SD_REF
. This allows achieving
optimum interoperability by perfectly matching input/output levels between voltage
translator and memory card in the 3 V signaling mode. Therefore, the voltage regulator
aims to follow the reference voltage provided at input V
SD_REF
directly. If tracking of the
memory card supply is not desired, connect pin V
SD_REF
to ground so the voltage
regulator refers to an integrated voltage reference. For 1.8 V (SEL = HIGH) signaling, the
voltage regulator is referred to the internal reference which is independent of the voltage
at V
SD_REF.
8.5 Feedback clock channel
The clock is transmitted from the host to the memory card side. The voltage translator and
the Printed-Circuit Board (PCB) tracks introduce some amount of delay. It reduces timing
margin for data read back from memory card, especially at higher data rates. Therefore,
a feedback path is provided to compensate the delay. The reasoning behind this approach
is the fact that the clock is always delivered by the host, while the data in the timing critical
read mode comes from the card.
8.6 EMI filter
All input/output driver stages are equipped with EMI filters to reduce interferences towards
sensitive mobile communication.
8.7 ESD protection
The device has robust ESD protections on all memory card pins as well as on the V
SD_REF
and V
SUPPLY
pins. The architecture prevents any stress for the host: the voltage translator
discharges any stress to supply ground.
Pins Write Protect (WP) and Card Detection (CD) might be pulled down by the memory
card which has to be detected by the host. Both signals must be HIGH if no card is
inserted. Therefore the pins are equipped with International Electrotechnical
Commission (IEC) system-level ESD protections and pull-up resistors connected to the
host supply V
CCA
.
IP4856CX25_C All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 2 — 15 October 2014 8 of 21
NXP Semiconductors
IP4856CX25/C
SD 3.0-compliant memory card integrated dual voltage level translator
9. Limiting values
[1] All system level tests are performed with the application-specific capacitors connected to the supply pins V
SUPPLY
, V
LDO
and V
CCA
.
10. Recommended operating conditions
[1] By minimum value the device is still fully functional, but the voltage on pin V
LDO
might drop below the recommended memory card
supply voltage.
[2] The voltage must not exceed 3.6 V.
Table 7. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CC
supply voltage 4 ms transient
on pin V
SUPPLY
0.5 +4.6 V
on pin V
CCA
0.5 +4.6 V
V
I
input voltage 4 ms transient at I/O pins 0.5 +4.6 V
P
tot
total power dissipation T
amb
= 40 C to +85 C - 1000 mW
T
stg
storage temperature 55 +150 C
T
amb
ambient temperature 40 +85 C
V
ESD
electrostatic discharge
voltage
IEC 61000-4-2, level 4, all memory card-side pins,
V
SUPPLY
, V
SD_REF
, WP and CD to ground
[1]
contact discharge 8+8kV
air discharge 15 +15 kV
Human Body Model (HBM)
JEDEC JESD22-A114F; all pins
2000 +2000 V
Machine Model (MM) JEDEC JESD22-A115;
all pins
200 +200 V
I
lu(IO)
input/output latch-up current JESD78B: 0.5 V
CC
<V
I
<1.5 V
CC
; T
j
< 125 C 100 +100 mA
Table 8. Operating conditions
Symbol Parameter Conditions Min Typ Max Unit
V
CC
supply voltage on pin V
SUPPLY
[1]
2.8 - 3.6 V
on pin V
CCA
1.7 - V
SUPPLY
V
V
I
input voltage host side
[2]
0.3 - V
CCA
+ 0.3 V
memory card side 0.3 - V
O(reg)
+ 0.3 V
C
ext
external
capacitance
recommended capacitor at pin V
LDO
-1.0- F
ESR equivalent series
resistance
at pin V
LDO
0- 50 m
C
ext
external
capacitance
recommended capacitor at pin V
SUPPLY
-0.1- F
recommended capacitor at pin V
CCA
-0.1- F

IP4856CX25/CZ

Mfr. #:
Manufacturer:
Nexperia
Description:
Translation - Voltage Levels SD 3.0compliant dual voltage level trans
Lifecycle:
New from this manufacturer.
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