BGA3031 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 3 — 20 November 2014 17 of 23
NXP Semiconductors
BGA3031
DOCSIS 3.0 plus upstream amplifier
Four carrier 64-QAM; T
amb
= 25 C; V
CC
= 5 V;
max. current; P
i
= 29 dBmV.
(1) P
L
=57dBmV
(2) P
L
=60dBmV
(3) P
L
=61dBmV
(4) DOCSIS 3.0 specification
Eight carrier 64-QAM; T
amb
= 25 C; V
CC
= 5 V;
max. current; P
i
= 29 dBmV.
(1) P
L
=57dBmV
(2) P
L
=60dBmV
(3) P
L
=61dBmV
Fig 22. Adjacent channel leakage ratio as a function of
frequency; typical values
Fig 23. Adjacent channel leakage ratio as a function of
frequency; typical values
One carrier QPSK; T
amb
= 25 C; V
CC
= 5 V;
max. current; P
i
= 33 dBmV.
(1) P
L
=61dBmV
(2) P
L
=64dBmV
(3) P
L
=65dBmV
(4) DOCSIS 3.0 specification
Two carrier QPSK; T
amb
= 25 C; V
CC
= 5 V;
max. current; P
i
= 33 dBmV.
(1) P
L
=61dBmV
(2) P
L
=64dBmV
(3) P
L
=65dBmV
(4) DOCSIS 3.0 specification
Fig 24. Adjacent channel leakage ratio as a function of
frequency; typical values
Fig 25. Adjacent channel leakage ratio as a function of
frequency; typical values
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