BGA3031 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 3 — 20 November 2014 7 of 23
NXP Semiconductors
BGA3031
DOCSIS 3.0 plus upstream amplifier
8.3 Tx enable / Tx disable
The amplifier can be disabled or enabled by making TX_EN (pin 9) LOW or HIGH. A LOW
to HIGH Tx enable transition will activate new programed settings. If no new settings are
programmed the last programmed setting will be re-activated.
9. Limiting values
[1] All digital pins may not exceed V
CC
as the internal ESD circuit can be damaged. To prevent this it is recommended that control pins are
limited to a maximum of 5 mA.
Table 8. Supply current versus gain setting
Gain setting G[5:0] Typical current (mA)
binary
notation
decimal
notation
Current setting C[1:0] Current setting C[1:0] Current setting C[1:0] Current setting C[1:0]
00 (decimal = 0) 01 (decimal = 1) 10 (decimal = 2) 11 (decimal =3)
111111 63 215 260 290 325
110111 55 215 260 290 325
110110 54 165 190 200 215
110001 49 165 190 200 215
110000 48 135 150 160 160
101000 40 135 150 160 160
100111 39 120 125 125 125
000101 5 120 125 125 125
Table 9. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Absolute Maximum Ratings are given as Limiting Values of stress conditions during operation, that must not be exceeded
under the worst probable conditions.
Symbol Parameter Conditions Min Max Unit
V
CC
supply voltage -6.0V
V
I
input voltage on pin IN_P 0.5 +6.0 V
on pin IN_N 0.5 +6.0 V
on pin CLK
[1]
0.5 +6.0 V
on pin DATA
[1]
0.5 +6.0 V
on pin CS
[1]
0.5 +6.0 V
on pin TX_EN
[1]
0.5 +6.0 V
on pin OUT_N 0.5 +6.0 V
on pin OUT_P 0.5 +6.0 V
P
i(max)
maximum input power - 40 dBmV
T
amb
ambient temperature 40 +85 C
T
stg
storage temperature 65 +150 C
T
j
junction temperature - 150 C
V
ESD
electrostatic discharge voltage Human Body Model (HBM);
According JEDEC standard 22-A114E
-4000V
Charged Device Model (CDM);
According JEDEC standard 22-C101B
-2000V
BGA3031 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 3 — 20 November 2014 8 of 23
NXP Semiconductors
BGA3031
DOCSIS 3.0 plus upstream amplifier
10. Thermal characteristics
[1] Simulated using final element method model resembling the device mounted on the application board. See Section 13.
[2] Device mounted on application board.
11. Static characteristics
[1] Voltage on the control pins.
Table 10. Thermal characteristics
Symbol Parameter Conditions Typ Unit
R
th(j-bop)
thermal resistance from junction to bottom of package in free air
[1]
14 K/W
R
th(j-a)
thermal resistance from junction to ambient in free air
[2]
35 K/W
Table 11. Characteristics
Typical values at V
CC
= 5 V; current setting = 3; T
amb
= 25
C; Z
i
= 200
; Z
o
= 75
, unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
I
CC
supply current transmit-enable mode; TX_EN = HIGH - 325 - mA
transmit-disable mode; TX_EN = LOW - 6.0 - mA
V
IH
HIGH-level input voltage
[1]
2.0 - V
CC
+0.6 V
V
IL
LOW-level input voltage
[1]
0- 0.8 V
P power dissipation - 1.625 W
BGA3031 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 3 — 20 November 2014 9 of 23
NXP Semiconductors
BGA3031
DOCSIS 3.0 plus upstream amplifier
12. Dynamic characteristics
[1] Voltage gain does not include loss due to input and output transformers.
[2] P
i
= 30 dBmV.
Table 12. Characteristics
Typical values at V
CC
= 5 V; current setting = 3; Z
i
= 200
: Z
o
= 75
; T
amb
= 25
C, unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
G
v
voltage gain gain code = 111111
[1][2]
-34- dB
gain code = 000000
[1][2]
- 24 - dB
G
flat
gain flatness f = 5 MHz to 42 MHz
[2]
- 0.4 - dB
f = 5 MHz to 85 MHz
[2]
- 0.6 - dB
G
step
gain step
[2]
-1.0- dB
E
G(dif)
differential gain error
[2]
- 0.2 - dB
R
i(dif)
differential input resistance - 200 -
R
o(dif)
differential output resistance - 75 -
f
range
frequency range 5 - 85 MHz
P
n
noise power transmit-disable mode; TX_EN = LOW;
any bandwidth = 160 kHz from
f=5MHzto85MHz
- 69 - dBmV
isol
isolation transmit-disable mode; TX_EN = LOW;
f=85MHz
- 90 - dB
NF noise figure transmit mode; gain code = 111111 - 3.5 - dB
transmit mode; gain code = 101110 - 6.5 - dB
t
sw(G)
gain switch time transmit-disable/transmit-enable
transient duration
-1.8- s
V
os
overshoot voltage transmit-disable/transmit-enable
transient step size
55 dBmV output power - 80 - mV(p-p)
49 dBmV output power - 50 - mV(p-p)
43 dBmV output power - 25 - mV(p-p)
37 dBmV output power - 5 - mV(p-p)
31 dBmV output power - 5 - mV(p-p)
2H
second harmonic level P
i
= 30 dBmV; P
L
= 64 dBmV into
75 differential impedance
- 80 - dBc
3H
third harmonic level P
i
= 30 dBmV; P
L
= 64 dBmV into
75 differential impedance
- 67 - dBc
IMD3 third-order intermodulation distortion P
i
= 27 dBmV per tone; P
L
= 61 dBmV
per tone into
75 differential impedance
- 70 - dBc
P
L(1dB)
output power at 1 dB gain
compression
CW signal - 74 - dBmV

BGA3031J

Mfr. #:
Manufacturer:
NXP Semiconductors
Description:
RF Amplifier BGA3031/HVQFN20///REEL 13 Q1 NDP
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New from this manufacturer.
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