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MT8VDDT6464HY-335J1

P1-P3P4-P6P7-P9P10-P12P13-P15
Products and specifications discussed herein are subject to change by Micron without notice.
256MB, 512MB (x64, SR) 200-Pin DDR SDRAM SODIMM
Features
PDF: 09005aef8092973f / Source: 09005aef80921669 Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD8C32_64x64H.fm - Rev. D 9/08 EN
1 ©2004 Micron Technology, Inc. All rights reserved.
DDR SDRAM SODIMM
MT8VDDT3264H – 256MB
1
MT8VDDT6464H – 512MB
For component data sheets, refer to Micron’s Web site: www.micron.com
Features
• 200-pin, small-outline dual in-line memory module
(SODIMM)
• Fast data transfer rates: PC2100, PC2700, or PC3200
• 256MB (32 Meg x 64), 512MB (64 Meg x 64)
•V
DD = VDDQ = +2.5V
(-40B: V
DD = VDDQ = +2.6V)
•V
DDSPD = +2.3V to +3.6V
• 2.5V I/O (SSTL_2-compatible)
• Internal, pipelined double data rate (DDR)
architecture; two data accesses per clock cycle
• Bidirectional data strobe (DQS) transmitted/
received with data—that is, source-synchronous
data capture
• Differential clock inputs (CK and CK#)
• Multiple internal device banks for concurrent
operation
• Selectable burst lengths (BL): 2, 4, or 8
• Auto precharge option
• Auto refresh and self refresh modes: 7.8125µs
maximum average periodic refresh interval
• Serial presence-detect (SPD) with EEPROM
• Selectable CAS latency (CL) for maximum
compatibility
• Single rank
• Gold edge contacts
Figure 1: 200-Pin SODIMM (MO-224)
1. Not recommended for new designs.
2. Contact Micron for industrial temperature
module offerings.
Options Marking
• Operating temperature
2
– Commercial (0°C ≤ T
A
≤ +70°C) None
– Industrial (–40°C ≤ T
A
≤ +85°C) I
•Package
– 200-pin DIMM (standard) G
– 200-pin DIMM (Pb-free) Y
• Memory clock, speed, CAS latency
– 5.0ns (200 MHz), 400 MT/s, CL = 3 -40B
– 6.0ns (167 MHz), 333 MT/s, CL = 2.5 -335
– 7.5ns (133 MHz), 266 MT/s, CL = 2
1
-262
– 7.5ns (133 MHz), 266 MT/s, CL = 2
1
-26A
– 7.5ns (133 MHz), 266 MT/s, CL = 2.5
1
-265
PCB height: 31.75mm (1.25in)
Notes: 1. The values of
t
RCD and
t
RP for -335 modules show 18ns to align with industry specifications;
actual DDR SDRAM device specifications are 15ns.
Table 1: Key Timing Parameters
Speed
Grade
Industry
Nomenclature
Data Rate (MT/s)
t
RCD
(ns)
t
RP
(ns)
t
RC
(ns) NotesCL = 3 CL = 2.5 CL = 2
-40B PC3200 400 333 266 15 15 55
-335 PC2700 – 333 266 18 18 60 1
-262 PC2100 – 266 266 15 15 60
-26A PC2100 – 266 266 20 20 65
-265 PC2100 – 266 200 20 20 65
PDF: 09005aef8092973f / Source: 09005aef80921669 Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD8C32_64x64H.fm - Rev. D 9/08 EN
2 ©2004 Micron Technology, Inc. All rights reserved.
256MB, 512MB (x64, SR) 200-Pin DDR SDRAM SODIMM
Features
Notes: 1. Data sheets for the base devices can be found on Micron’s Web site.
2. All part numbers end with a two-place code (not shown) that designates component and
PCB revisions. Consult factory for current revision codes. Example: MT8VDDT6464HY-335F3
.
Table 2: Addressing
Parameter 256MB 512MB
Refresh count
8K 8K
Row address
8K (A0–A12) 8K (A0–A12)
Device bank address
4 (BA0, BA1) 4 (BA0, BA1)
Device configuration
256Mb (32 Meg x 8) 512Mb (64 Meg x 8)
Column address
1K (A0–A9) 2K (A0–A9, A11)
Module rank address
1 (S0#) 1 (S0#)
Table 3: Part Numbers and Timing Parameters – 256MB
Base device: MT46V32M8,
1
256Mb DDR SDRAM
Part Number
2
Module
Density Configuration
Module
Bandwidth
Memory Clock/
Data Rate
Clock Cycles
(CL-
t
RCD-
t
RP)
MT8VDDT3264HG-40B__
256MB 32 Meg x 64 3.2 GB/s 5.0ns/400 MT/s 3-3-3
MT8VDDT3264HY-40B__
256MB 32 Meg x 64 3.2 GB/s 5.0ns/400 MT/s 3-3-3
MT8VDDT3264HG-335__
256MB 32 Meg x 64 2.7 GB/s 6.0ns/333 MT/s 2.5-3-3
MT8VDDT3264HY-335__
256MB 32 Meg x 64 2.7 GB/s 6.0ns/333 MT/s 2.5-3-3
MT8VDDT3264HG-262__
256MB 32 Meg x 64 2.1 GB/s 7.5ns/266 MT/s 2-2-2
MT8VDDT3264HG-26A__
256MB 32 Meg x 64 2.1 GB/s 7.5ns/266 MT/s 2-3-3
MT8VDDT3264HG-265__
256MB 32 Meg x 64 2.1 GB/s 7.5ns/266 MT/s 2.5-3-3
MT8VDDT3264HY-265__
256MB 32 Meg x 64 2.1 GB/s 7.5ns/266 MT/s 2.5-3-3
Table 4: Part Numbers and Timing Parameters – 512MB
Base device: MT46V64M8,
1
512Mb DDR SDRAM
Part Number
2
Module
Density Configuration
Module
Bandwidth
Memory Clock/
Data Rate
Clock Cycles
(CL-
t
RCD-
t
RP)
MT8VDDT6464HG-40B__
512MB 64 Meg x 64 3.2 GB/s 5.0ns/400 MT/s 3-3-3
MT8VDDT6464HY-40B__
512MB 64 Meg x 64 3.2 GB/s 5.0ns/400 MT/s 3-3-3
MT8VDDT6464HG-335__
512MB 64 Meg x 64 2.7 GB/s 6.0ns/333 MT/s 2.5-3-3
MT8VDDT6464HY-335__
512MB 64 Meg x 64 2.7 GB/s 6.0ns/333 MT/s 2.5-3-3
MT8VDDT6464HG-265__
512MB 64 Meg x 64 2.1 GB/s 7.5ns/266 MT/s 2.5-3-3
MT8VDDT6464HY-265__
512MB 64 Meg x 64 2.1 GB/s 7.5ns/266 MT/s 2.5-3-3
PDF: 09005aef8092973f / Source: 09005aef80921669 Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD8C32_64x64H.fm - Rev. D 9/08 EN
3 ©2004 Micron Technology, Inc. All rights reserved.
256MB, 512MB (x64, SR) 200-Pin DDR SDRAM SODIMM
Pin Assignments and Descriptions
Pin Assignments and Descriptions
Table 5: Pin Assignments
200-Pin SODIMM Front 200-Pin SODIMM Back
Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol
1V
REF 51 VSS 101 A9 151 DQ42 2 VREF 52 VSS 102 A8 152 DQ46
3V
SS 53 DQ19 103 VSS 153 DQ43 4 VSS 54 DQ23 104 VSS 154 DQ47
5 DQ0 55 DQ24 105 A7 155 V
DD 6 DQ4 56 DQ28 106 A6 156 VDD
7DQ157VDD 107A5157VDD 8DQ558VDD 108 A4 158 CK1#
9V
DD 59 DQ25 109 A3 159 VSS 10 VDD 60 DQ29 110 A2 160 CK1
11 DQS0 61 DQS3 111 A1 161 VSS 12 DM0 62 DM3 112 A0 162 VSS
13 DQ2 63 VSS 113 VDD 163 DQ48 14 DQ6 64 VSS 114 VDD 164 DQ52
15 VSS 65 DQ26 115 A10 165 DQ49 16 VSS 66 DQ30 116 BA1 166 DQ53
17 DQ3 67 DQ27 117 BA0 167 V
DD 18 DQ7 68 DQ31 118 RAS# 168 VDD
19 DQ8 69 VDD 119 WE# 169 DQS6 20 DQ12 70 VDD 120 CAS# 170 DM6
21 V
DD 71 NC 121 S0# 171 DQ50 22 VDD 72 NC 122 NC 172 DQ54
23 DQ9 73 NC 123 NC 173 VSS 24 DQ13 74 NC 124 NC 174 VSS
25 DQS1 75 VSS 125 VSS 175 DQ51 26 DM1 76 VSS 126 VSS 176 DQ55
27 VSS 77 NC 127 DQ32 177 DQ56 28 VSS 78 NC 128 DQ36 178 DQ60
29 DQ10 79 NC 129 DQ33 179 V
DD 30 DQ14 80 NC 130 DQ37 180 VDD
31 DQ11 81 VDD 131 VDD 181 DQ57 32 DQ15 82 VDD 132 VDD 182 DQ61
33 V
DD 83 NC 133 DQS4 183 DQS7 34 VDD 84 NC 134 DM4 184 DM7
35 CK0 85 NC 135 DQ34 185 VSS 36 VDD 86 NC 136 DQ38 186 VSS
37 CK0# 87 VSS 137 VSS 187 DQ58 38 VSS 88 VSS 138 VSS 188 DQ62
39 VSS 89 NC 139 DQ35 189 DQ59 40 VSS 90 VSS 140 DQ39 190 DQ63
41 DQ16 91 NC 141 DQ40 191 V
DD 42 DQ20 92 VDD 142 DQ44 192 VDD
43 DQ17 93 VDD 143 VDD 193SDA 44DQ2194 VDD 144 VDD 194 SA0
45 V
DD 95 NC 145 DQ41 195 SCL 46 VDD 96 CKE0 146 DQ45 196 SA1
47 DQS2 97 NC 147 DQS5 197 VDDSPD 48 DM2 98 NC 148 DM5 198 SA2
49 DQ18 99 A12 149 V
SS 199 NC 50 DQ22 100 A11 150 VSS 200 NC
P1-P3P4-P6P7-P9P10-P12P13-P15

MT8VDDT6464HY-335J1

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Manufacturer:
Micron
Description:
MODULE DDR SDRAM 512MB 200SODIMM
Lifecycle:
New from this manufacturer.
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