MT8VDDT6464HY-335J1

PDF: 09005aef8092973f / Source: 09005aef80921669 Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD8C32_64x64H.fm - Rev. D 9/08 EN
13 ©2004 Micron Technology, Inc. All rights reserved.
256MB, 512MB (x64, SR) 200-Pin DDR SDRAM SODIMM
Serial Presence-Detect
Serial Presence-Detect
Notes: 1. To avoid spurious start and stop conditions, a minimum delay is placed between SCL = 1 and
the falling or rising edge of SDA.
2. This parameter is sampled.
3. For a restart condition or following a WRITE cycle.
4. The SPD EEPROM WRITE cycle time (
t
WRC) is the time from a valid stop condition of a write
sequence to the end of the EEPROM internal ERASE/PROGRAM cycle. During the WRITE
cycle, the EEPROM bus interface circuit is disabled, SDA remains HIGH due to pull-up resis-
tance, and the EEPROM does not respond to its slave address.
Serial Presence-Detect Data
For the latest serial presence-detect data, refer to Microns SPD page:
www.micron.com/SPD.
Table 12: Serial Presence-Detect EEPROM DC Operating Conditions
Parameter/Condition Symbol Min Max Units
Supply voltage
V
DDSPD 2.3 3.6 V
Input high voltage: Logic 1; All inputs
V
IH VDDSPD × 0.7 VDDSPD + 0.5 V
Input low voltage: Logic 0; All inputs
V
IL –1.0 VDDSPD × 0.3 V
Output low voltage: I
OUT = 3mA
VOL –0.4V
Input leakage current: V
IN = GND to VDD
ILI –10µA
Output leakage current: V
OUT = GND to VDD
ILO –10µA
Standby current: SCL = SDA = V
DD - 0.3V; All other inputs = VSS or VDD
ISB –30µA
Power supply current: SCL clock frequency = 100 kHz
I
CC –2.0mA
Table 13: Serial Presence-Detect EEPROM AC Operating Conditions
Parameter/Condition Symbol Min Max Units Notes
SCL LOW to SDA data-out valid
t
AA 0.2 0.9 µs 1
Time the bus must be free before a new transition can start
t
BUF 1.3 µs
Data-out hold time
t
HD:DAT 200 ns
SDA fall time
t
F–300ns2
SDA rise time
t
R–300ns2
Data-in hold time
t
HD:DI 0 µs
Start condition hold time
t
HD:STA 0.6 µs
Clock HIGH period
t
HIGH 0.6 µs
Clock LOW period
t
LOW 1.3 µs
SCL clock frequency
f
SCL 400 kHz
Data-in setup time
t
SU:DAT 100 ns
Start condition setup time
t
SU:STA 0.6 µs 3
Stop condition setup time
t
SU:STO 0.6 µs
WRITE cycle time
t
WRC 5 ms 4
PDF: 09005aef8092973f / Source: 09005aef80921669 Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD8C32_64x64H.fm - Rev. D 9/08 EN
14 ©2004 Micron Technology, Inc. All rights reserved.
256MB, 512MB (x64, SR) 200-Pin DDR SDRAM SODIMM
Module Dimensions
Module Dimensions
Figure 4: 200-Pin SODIMM – Layout 1 (256MB)
Notes: 1. All dimensions are in millimeters (inches); MAX/MIN or typical (TYP) where noted.
2. The dimensional diagram is for reference only. Refer to the JEDEC MO document for addi-
tional design dimensions.
3.8 (0.15)
MAX
1.1 (0.043)
0.9 (0.035)
Pin 1
67.75 (2.667)
67.45 (2.656)
20.0 (0.787)
TYP
1.8 (0.071)
(2X)
0.60 (0.024)
TYP
0.45 (0.018)
TYP
2.0 (0.079) R
(2X)
Pin 199
Pin 200
Pin 2
Front view
2.0 (0.079) TYP
6.0 (0.236) TYP
63.60 (2.504)
1.0 (0.039)
TYP
31.9 (1.256)
31.6 (1.244)
TYP
Back view
U1 U2 U3 U4
U9
U8 U7 U6 U5
15.35 (0.604)
TYP
4.0 (0.157) TYP
®
8000 S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-3900
prodmktg@micron.com www.micron.com Customer Comment Line: 800-932-4992
Micron, the M logo, and the Micron logo are trademarks of Micron Technology, Inc. All other trademarks are the property of
their respective owners.
This data sheet contains minimum and maximum limits specified over the power supply and temperature range set forth
herein. Although considered final, these specifications are subject to change, as further product development and data
characterization sometimes occur.
256MB, 512MB (x64, SR) 200-Pin DDR SDRAM SODIMM
Module Dimensions
PDF: 09005aef8092973f / Source: 09005aef80921669 Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD8C32_64x64H.fm - Rev. D 9/08 EN
15 ©2004 Micron Technology, Inc. All rights reserved.
Figure 5: 200-Pin SODIMM – Layout 2 (256MB, 512MB)
Notes: 1. All dimensions are in millimeters (inches); MAX/MIN or typical (TYP) where noted.
2. The dimensional diagram is for reference only. Refer to the JEDEC MO document for addi-
tional design dimensions.
3.8 (0.15)
MAX
1.1 (0.043)
0.9 (0.035)
Pin 1
67.75 (2.667)
67.45 (2.656)
20.0 (0.787)
TYP
1.8 (0.071)
(2X)
0.60 (0.024)
TYP
0.45 (0.018)
TYP
2.0 (0.079) R
(2X)
Pin 199
Pin 200
Pin 2
Front view
2.0 (0.079) TYP
6.0 (0.236) TYP
63.60 (2.504)
1.0 (0.039)
TYP
31.9 (1.256)
31.6 (1.244)
TYP
Back view
U1 U2 U3 U4
U9
U8U7
U6U5
15.35 (0.604)
TYP
4.0 (0.157) TYP

MT8VDDT6464HY-335J1

Mfr. #:
Manufacturer:
Micron
Description:
MODULE DDR SDRAM 512MB 200SODIMM
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New from this manufacturer.
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