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FDT461N

P1-P3P4-P6P7-P9P10-P10
©2004 Fairchild Semiconductor Corporation
April 2004
FDT461N Rev. A1
FDT461N
FDT461N
N-Channel Logic Level PowerTrench
®
MOSFET
100V, 0.4A, 2.5Ω
Features
•r
DS(ON)
= 1.45Ω (Typ.), V
GS
= 4.5V, I
D
= 0.4A
•Q
g
(tot) = 2.36nC (Typ.), V
GS
= 10V
• Low Miller Charge
• Low Q
RR
Body Diode
Applications
• Servo Motor Load Control
• DC-DC converters
MOSFET Maximum Ratings T
A
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
V
DSS
Drain to Source Voltage 100 V
V
GS
Gate to Source Voltage ±20 V
I
D
Drain Current
0.54
A
Continuous (T
A
= 25
o
C, V
GS
= 10V, R
θJA
= 110
o
C/W)
Continuous (T
A
= 25
o
C, V
GS
= 4.5V, R
θJA
= 110
o
C/W) 0.4 A
Pulsed Figure 4 A
E
AS
Single Pulse Avalanche Energy (Note 1) 6.3 mJ
P
D
Power dissipation 1.13 W
Derate above 25
o
C9mW/
o
C
T
J
, T
STG
Operating and Storage Temperature -55 to 150
o
C
R
θJA
Thermal Resistance Junction to Ambient SOT-223, Pad area = 0.171 in
2
110
o
C/W
R
θJA
Thermal Resistance Junction to Ambient SOT-223, Pad area = 0.068 in
2
128
o
C/W
R
θJA
Thermal Resistance Junction to Ambient SOT-223, Pad area = 0.026 in
2
147
o
C/W
Device Marking Device Package Reel Size Tape Width Quantity
461 FDT461N SOT-223 13” 12mm 2500 units
DRAIN
SOURCE
GATE
DRAIN
(FLANGE)
S G
D
D
SOT-223
©2004 Fairchild Semiconductor Corporation FDT461N Rev. A1
FDT461N
Electrical Characteristics T
A
= 25°C unless otherwise noted
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
(V
GS
= 10V)
Drain-Source Diode Characteristics
Notes:
1: Starting T
J
= 25°C, L = 67mH, I
AS
= 0.43A.
Symbol Parameter Test Conditions Min Typ Max Units
B
VDSS
Drain to Source Breakdown Voltage I
D
= 250µA, V
GS
= 0V 100 - - V
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 80V - - 1
µA
V
GS
= 0V T
C
= 125
o
C - - 250
I
GSS
Gate to Source Leakage Current V
GS
= ±20V - - ±100 nA
V
GS(TH)
Gate to Source Threshold Voltage V
GS
= V
DS
, I
D
= 250µA0.8-2V
r
DS(ON)
Drain to Source On Resistance
I
D
= 0.54A, V
GS
= 10V - 1.40 2.0
Ω
I
D
= 0.4A, V
GS
= 4.5V - 1.45 2.5
I
D
= 0.54A, V
GS
= 10V,
T
J
= 150
o
C
-2.804.0
C
ISS
Input Capacitance
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
-74-pF
C
OSS
Output Capacitance - 11 - pF
C
RSS
Reverse Transfer Capacitance - 2.5 - pF
Q
g(TOT)
Total Gate Charge at 10V V
GS
= 0V to 10V
V
DD
= 50V
I
D
= 0.54A
I
g
= 1.0mA
2.36 4.0 nC
Q
g(4.5)
Total Gate Charge at 4.5V V
GS
= 0V to 4.5V - 1.27 2.0 nC
Q
g(TH)
Threshold Gate Charge V
GS
= 0V to 1V 0.1 0.15 nC
Q
gs
Gate to Source Gate Charge - 0.37 - nC
Q
gs2
Gate Charge Threshold to Plateau - 0.27 - nC
Q
gd
Gate to Drain “Miller” Charge - 0.25 - nC
t
ON
Turn-On Time
V
DD
= 50V, I
D
= 0.54A
V
GS
= 10V, R
GS
= 120Ω
--6.5ns
t
d(ON)
Turn-On Delay Time - 3 - ns
t
r
Rise Time - 1.3 - ns
t
d(OFF)
Turn-Off Delay Time - 63 - ns
t
f
Fall Time - 12 - ns
t
OFF
Turn-Off Time - - 113 ns
V
SD
Source to Drain Diode Voltage
I
SD
= 0.54A - - 1.25 V
I
SD
= 0.3A - - 1.0 V
t
rr
Reverse Recovery Time I
SD
= 0.54A, dI
SD
/dt = 100A/µs- - 22 ns
Q
RR
Reverse Recovered Charge I
SD
= 0.54A, dI
SD
/dt = 100A/µs- - 18 nC
©2004 Fairchild Semiconductor Corporation FDT461N Rev. A1
FDT461N
Typical Characteristics T
A
= 25°C unless otherwise noted
Figure 1. Normalized Power Dissipation vs
Ambient Temperature
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
Figure 3. Normalized Maximum Transient Thermal Impedance
Figure 4. Peak Current Capability
T
A
, AMBIENT TEMPERATURE (
o
C)
POWER DISSIPATION MULTIPLIER
0
0255075100 150
0.2
0.4
0.6
0.8
1.0
1.2
125
0
0.2
0.4
25 50 75 100 125 150
0.6
I
D
, DRAIN CURRENT (A)
T
A
, CASE TEMPERATURE (
o
C)
V
GS
= 10V
V
GS
= 4.5V
t, RECTANGULAR PULSE DURATION (s)
Z
θJA
, NORMALIZED
THERMAL IMPEDANCE
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θJA
x R
θJA
+ T
A
P
DM
t
1
t
2
0.5
0.2
0.1
0.05
0.01
0.02
DUTY CYCLE - DESCENDING ORDER
SINGLE PULSE
0.01
0.1
1
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
2
10
-5
I
DM
, PEAK CURRENT (A)
t, PULSE WIDTH (s)
T
A
= 25
o
C
I = I
25
150 - T
A
125
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
V
GS
= 4.5V
1
10
0.4
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
P1-P3P4-P6P7-P9P10-P10

FDT461N

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Manufacturer:
ON Semiconductor / Fairchild
Description:
MOSFET NCH LOGIC ENHANCEMEN MODFIELD EFFECT TRAN
Lifecycle:
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