FDT461N

Mfr. #:: FDT461N
Manufacturer:: ON Semiconductor / Fairchild
Description:: MOSFET NCH LOGIC ENHANCEMEN MODFIELD EFFECT TRAN
Lifecycle:: New from this manufacturer.
Datasheet:: FDT461N Datasheet
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HTML Datasheet:: FDT461N Datasheet FDT461N Datasheet (P4-P6)FDT461N Datasheet (P7-P9)FDT461N Datasheet (P10)
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: ON Semiconductor

Product Category:: MOSFET

RoHS:: E

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: SOT-223-4

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 100 V

Id - Continuous Drain Current:: 400 mA

Rds On - Drain-Source Resistance:: 1.4 Ohms

Vgs - Gate-Source Voltage:: 20 V

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 1.13 W

Configuration:: Single

Channel Mode:: Enhancement

Packaging:: Reel

Height:: 1.8 mm

Length:: 6.5 mm

Product:: MOSFET Small Signal

Transistor Type:: 1 N-Channel

Type:: MOSFET

Width:: 3.5 mm

Brand:: ON Semiconductor / Fairchild

Fall Time:: 1.3 ns

Product Type:: MOSFET

Rise Time:: 1.3 ns

Factory Pack Quantity:: 2500

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 63 ns

Typical Turn-On Delay Time:: 3 ns

Part # Aliases:: FDT461N_NL

Unit Weight:: 0.003951 oz

Tags: FDT4, FDT

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Vacuum Packaging with PL

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FDT461N Description

***Yang: N-Channel 100V 540mA (Ta) 1.13W (Ta) Surface Mount SOT-223-4 - Bulk

***i-Key: MOSFET N-CH 100V 0.54A SOT-223

***inecomponents.com: 100V N-Channel Logic Level PowerTrench MOSFET

***ser: MOSFETs NCH LOGIC ENHANCEMEN MODFIELD EFFECT TRAN

***or: MOSFET N-CH 100V 540MA SOT223-4

***ure Electronics: Single N-Channel 100 V 2 W Silicon Surface Mount Mosfet - SOT-223

***ical: Trans MOSFET N-CH 100V 0.8A Automotive 4-Pin(3+Tab) SOT-223 T/R

***ark: MOSFET, N CHANNEL, 100V, 0.8A, SOT223; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:800mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:800mV RoHS Compliant: Yes

***nell: MOSFET, N CH, 100V, 0.8A, SOT223; Transistor Polarity: N Channel; Continuous Drain Current Id: 800mA; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 1.5ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 800mV; Power Dissipation Pd: 2W; Transistor Case Style: SOT-223; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (15-Jan-2019); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C

***ure Electronics: Single N-Channel 100 V 0.54 Ohms Surface Mount Power Mosfet - SOT-223

***ical: Trans MOSFET N-CH 100V 1.5A 4-Pin(3+Tab) SOT-223 T/R

***nell: MOSFET, N; Transistor Polarity: N Channel; Continuous Drain Current Id: 1.5A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.54ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: -; Power Dissipation Pd: 2W; Transistor Case Style: SOT-223; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; Current Id Max: 1.5A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Termination Type: Surface Mount Device; Voltage Vds Typ: 100V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V

*** Stop Electro: Small Signal Field-Effect Transistor, 1.5A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA

***(Formerly Allied Electronics): MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.2Ohm; ID 1.6A; SOT-223; PD 1W; VGS +/-20V; -55

***ure Electronics: Single N-Channel 100 V 0.2 Ohm 17 nC HEXFET® Power Mosfet - SOT-223

***ineon SCT: 100V Single N-Channel HEXFET Power MOSFET in a SOT-223 package, SOT223-4, RoHS

***ical: Trans MOSFET N-CH Si 100V 2.2A 4-Pin(3+Tab) SOT-223 Tube

***S.I.T. Europe - USA - Asia: Small Signal Field-Effect Transistor, 1.6A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

***ark: Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:1.6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:1W; No. of Pins:4Pins RoHS Compliant: Yes

***nell: MOSFET, N, 100V, 1.6A, SOT-223; Transistor Polarity: N Channel; Continuous Drain Current Id: 1.6A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.2ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 2.1W; Transistor Case Style: SOT-223; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Current Temperature: 25°C; External Depth: 7.3mm; External Length / Height: 1.7mm; External Width: 6.7mm; Full Power Rating Temperature: 25°C; Junction to Case Thermal Resistance A: 60°C/W; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Pulse Current Idm: 13A; SMD Marking: FL4310; Tape Width: 12mm; Termination Type: Surface Mount Device; Voltage Vds Typ: 100V; Voltage Vgs Rds on Measurement: 10V; Voltage Vgs th Max: 4V

***klin Elektronik: INFINEON SMD Autom. MOSFET NFET 100V 1,8A 230mΩ 150°C SOT-223 BSP372

***p One Stop: Trans MOSFET N-CH 100V 1.8A Automotive 4-Pin(3+Tab) SOT-223 T/R

***ure Electronics: Single N-Channel 100 V 270 mOhm 14.3 nC OptiMOS Power Mosfet - SOT-223

***Yang: Trans MOSFET N-CH 100V 1.8A 4-Pin SOT-223 T/R - Product that comes on tape, but is not reeled (Alt:

***ment14 APAC: MOSFET, N-CH, 100V, 1.8A, SOT-223-4; Transistor Polarity:N Channel; Continuous Drain Current Id:1.8A; Source Voltage Vds:100V; On Resistance

***ark: MOSFET, N-CH, 100V, 1.8A, 150DEG C, 1.8W; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:1.8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.4V RoHS Compliant: Yes

***ineon: All Small Signal n-channel products are suitable for automotive applications (excluding 2N7002). | Summary of Features: Enhancement mode; Avalanche rated; Pb-free lead plating; RoHS compliant; Qualified according to AEC Q101 | Target Applications: Automotive; Consumer; DC-DC; eMobility; Motor control; Onboard charger; Telecom

***nell: MOSFET, N-CH, 100V, 1.8A, SOT-223-4; Transistor Polarity: N Channel; Continuous Drain Current Id: 1.8A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.153ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.4V; Power Dissipation Pd: 1.8W; Transistor Case Style: SOT-223; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: OptiMOS Series; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 1.8 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 230 / Gate-Source Voltage V = 20 / Fall Time ns = 18 / Rise Time ns = 6.7 / Turn-OFF Delay Time ns = 47.3 / Turn-ON Delay Time ns = 5.1 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-223 / Pins = 4 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 1.8

***emi: Power MOSFET, N-Channel, Logic Level, QFET®, 100 V, 1.7 A, 350 mΩ, SOT-223

***eco: Transistor MOSFET N-Channel 100 Volt 1.7A 4-Pin(3+Tab) SOT-223

*** Source Electronics: Trans MOSFET N-CH 100V 1.7A 4-Pin(3+Tab) SOT-223 T/R / MOSFET N-CH 100V 1.7A SOT-223

***ure Electronics: N-Channel 100 V 0.35 Ohm Surface Mount Mosfet - SOT-223

***Yang: Trans MOSFET N-CH 100V 1.7A 4-Pin(3+Tab) SOT-223 T/R - Product that comes on tape, but is not reeled

***nell: N CH MOSFET, 100V, 1.7A, SOT-223; Transistor Polarity: N Channel; Continuous Drain Current Id: 1.7A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.275ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 2W; Transistor Case Style: SOT-223; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Operating Temperature Min: -55°C

***rchild Semiconductor: This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 1.7 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 380 / Gate-Source Voltage V = 20 / Fall Time ns = 110 / Rise Time ns = 210 / Turn-OFF Delay Time ns = 45 / Turn-ON Delay Time ns = 30 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-223 / Pins = 4 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 2

***(Formerly Allied Electronics): IRFL9110TRPBF P-channel MOSFET Transistor; 0.69 A; 100 V; 3 + Tab-Pin SOT-223

***ure Electronics: Single P-Channel 100 V 1.2 Ohms Surface Mount Power Mosfet - SOT-223-3

*** Stop Electro: Small Signal Field-Effect Transistor, 1.1A I(D), 100V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA

Market price

Part #	Mfg.	Description	Stock	Price
FDT461N DISTI # FDT461N-ND	ON Semiconductor	MOSFET N-CH 100V 0.54A SOT-223 RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Limited Supply - Call
FDT461N	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 0.54A I(D), 100V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	47000	1000:$0.4500 500:$0.4700 100:$0.4900 25:$0.5100 1:$0.5500
FDT461N DISTI # 512-FDT461N	ON Semiconductor	MOSFET NCH LOGIC ENHANCEMEN MODFIELD EFFECT TRAN RoHS: Compliant	0

Image	Part #	Description
	Mfr.#: FDT86113LZ OMO.#: OMO-FDT86113LZ	MOSFET 100V N-Channel PowerTrench MOSFET
	Mfr.#: FDT461N OMO.#: OMO-FDT461N	MOSFET NCH LOGIC ENHANCEMEN MODFIELD EFFECT TRAN
	Mfr.#: FDT1600N10ALZ OMO.#: OMO-FDT1600N10ALZ-ON-SEMICONDUCTOR	MOSFET N-CH 100V SOT-223-4
	Mfr.#: FDT3622 OMO.#: OMO-FDT3622-1190	New and Original
	Mfr.#: FDT493N OMO.#: OMO-FDT493N-1190	New and Original
	Mfr.#: FDT49FCT805ASO OMO.#: OMO-FDT49FCT805ASO-1190	New and Original
	Mfr.#: FDT7024-S55PF OMO.#: OMO-FDT7024-S55PF-1190	New and Original
	Mfr.#: FDT70V27 OMO.#: OMO-FDT70V27-1190	New and Original
	Mfr.#: FDT86246L OMO.#: OMO-FDT86246L-ON-SEMICONDUCTOR	MOSFET N-CH 150V 2A SOT-223
	Mfr.#: FDTA1003014 OMO.#: OMO-FDTA1003014-1190	New and Original

FDT461N

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes