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FDT461N

P1-P3P4-P6P7-P9P10-P10
©2004 Fairchild Semiconductor Corporation FDT461N Rev. A1
FDT461N
PSPICE Electrical Model
.SUBCKT FDT461N 2 1 3 ; rev January 2004
Ca 12 8 1.5e-10
Cb 15 14 1.1e-10
Cin 6 8 7.0e-11
Dbody 7 5 DbodyMOD
Dbreak 5 11 DbreakMOD
Dplcap 10 5 DplcapMOD
Ebreak 11 7 17 18 109.7
Eds 14 8 5 8 1
Egs 13 8 6 8 1
Esg 6 10 6 8 1
Evthres 6 21 19 8 1
Evtemp 20 6 18 22 1
It 8 17 1
Lgate 1 9 5.29e-9
Ldrain 2 5 1.0e-9
Lsource 3 7 5.71e-9
RLgate 1 9 52.9
RLdrain 2 5 10
RLsource 3 7 57.1
Mmed 16 6 8 8 MmedMOD
Mstro 16 6 8 8 MstroMOD
Mweak 16 21 8 8 MweakMOD
Rbreak 17 18 RbreakMOD 1
Rdrain 50 16 RdrainMOD 0.9
Rgate 9 20 3.94
RSLC1 5 51 RSLCMOD 1e-6
RSLC2 5 50 1e3
Rsource 8 7 RsourceMOD 0.5
Rvthres 22 8 RvthresMOD 1
Rvtemp 18 19 RvtempMOD 1
S1a 6 12 13 8 S1AMOD
S1b 13 12 13 8 S1BMOD
S2a 6 15 14 13 S2AMOD
S2b 13 15 14 13 S2BMOD
Vbat 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*15),2.5))}
.MODEL DbodyMOD D (IS=6.4E-11 RS=8.0e-3 IKF=0.9 TRS1=2.5e-3 TRS2=9.5e-6
+ CJO=2.2e-11 M=0.52 TT=2.9e-8 XTI=0.1)
.MODEL DbreakMOD D (RS=0.6 TRS1=1.4e-3 TRS2=-5.0e-5)
.MODEL DplcapMOD D (CJO=3.9e-11 IS=1e-30 N=10 M=0.67)
.MODEL MmedMOD NMOS (VTO=1.75 KP=1.2 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=3.94 T_ABS=25)
.MODEL MstroMOD NMOS (VTO=2.03 KP=12 IS=1e-30 N=10 TOX=1 L=1u W=1u T_ABS=25)
.MODEL MweakMOD NMOS (VTO=1.46 KP=0.02 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=39.4 RS=0.1 T_ABS=25)
.MODEL RbreakMOD RES (TC1=1.0e-3 TC2=-8.8e-7)
.MODEL RdrainMOD RES (TC1=7.0e-3 TC2=2.0e-5)
.MODEL RSLCMOD RES (TC1=1.0e-3 TC2=9.0e-6)
.MODEL RsourceMOD RES (TC1=4.8e-3 TC2=1.0e-6)
.MODEL RvthresMOD RES (TC1=-9.0e-4 TC2=-7.0e-6)
.MODEL RvtempMOD RES (TC1=-2.1e-3 TC2=1.8e-6)
MODEL S1AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-5.0 VOFF=-2.0)
.MODEL S1BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-2.0 VOFF=-5.0)
.MODEL S2AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-0.4 VOFF=0.3)
.MODEL S2BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=0.3 VOFF=-0.4)
.ENDS
Note: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank
Wheatley.
18
22
+
-
6
8
+
-
5
51
+
-
19
8
+
-
17
18
6
8
+
-
5
8
+
-
RBREAK
RVTEMP
VBAT
RVTHRES
IT
17 18
19
22
12
13
15
S1A
S1B
S2A
S2B
CA
CB
EGS EDS
14
8
13
8
14
13
MWEAK
EBREAK
DBODY
RSOURCE
SOURCE
11
7
3
LSOURCE
RLSOURCE
CIN
RDRAIN
EVTHRES
16
21
8
MMED
MSTRO
DRAIN
2
LDRAIN
RLDRAIN
DBREAK
DPLCAP
ESLC
RSLC1
10
5
51
50
RSLC2
1
GATE
RGATE
EVTEMP
9
ESG
LGATE
RLGATE
20
+
-
+
-
+
-
6
©2004 Fairchild Semiconductor Corporation FDT461N Rev. A1
FDT461N
SABER Electrical Model
rev January 2004
template FDT461N n2,n1,n3 = m_temp
number m_temp=25
electrical n2,n1,n3
{
var i iscl
dp..model dbodymod = (isl=6.4e-11,rs=8.0e-3,ikf=0.9,trs1=2.5e-3,trs2=9.5e-6,cjo=2.2e-11,m=0.52,tt=2.9e-8,xti=0.1)
dp..model dbreakmod = (rs=0.6,trs1=1.4e-3,trs2=-5e-5)
dp..model dplcapmod = (cjo=3.9e-11,isl=10e-30,nl=10,m=0.67)
m..model mmedmod = (type=_n,vto=1.75,kp=1.2,is=1e-30, tox=1)
m..model mstrongmod = (type=_n,vto=2.03,kp=12,is=1e-30, tox=1)
m..model mweakmod = (type=_n,vto=1.46,kp=0.02,is=1e-30, tox=1,rs=0.1)
sw_vcsp..model s1amod = (ron=1e-5,roff=0.1,von=-5.0,voff=-2.0)
sw_vcsp..model s1bmod = (ron=1e-5,roff=0.1,von=-2.0,voff=-5.0)
sw_vcsp..model s2amod = (ron=1e-5,roff=0.1,von=-0.4,voff=0.3)
sw_vcsp..model s2bmod = (ron=1e-5,roff=0.1,von=0.3,voff=-0.4)
c.ca n12 n8 = 1.5e-10
c.cb n15 n14 = 1.1e-10
c.cin n6 n8 = 7.0e-11
dp.dbody n7 n5 = model=dbodymod
dp.dbreak n5 n11 = model=dbreakmod
dp.dplcap n10 n5 = model=dplcapmod
spe.ebreak n11 n7 n17 n18 = 109.7
spe.eds n14 n8 n5 n8 = 1
spe.egs n13 n8 n6 n8 = 1
spe.esg n6 n10 n6 n8 = 1
spe.evthres n6 n21 n19 n8 = 1
spe.evtemp n20 n6 n18 n22 = 1
i.it n8 n17 = 1
l.lgate n1 n9 = 5.29e-9
l.ldrain n2 n5 = 1.0e-9
l.lsource n3 n7 = 5.71e-9
res.rlgate n1 n9 = 52.9
res.rldrain n2 n5 = 10
res.rlsource n3 n7 = 57.1
m.mmed n16 n6 n8 n8 = model=mmedmod, temp=m_temp, l=1u, w=1u
m.mstrong n16 n6 n8 n8 = model=mstrongmod, temp=m_temp, l=1u, w=1u
m.mweak n16 n21 n8 n8 = model=mweakmod, temp=m_temp, l=1u, w=1u
res.rbreak n17 n18 = 1, tc1=1.0e-3,tc2=-8.8e-7
res.rdrain n50 n16 = 0.9, tc1=7.0e-3,tc2=2.0e-5
res.rgate n9 n20 = 3.94
res.rslc1 n5 n51 = 1e-6, tc1=1.0e-3,tc2=9.0e-6
res.rslc2 n5 n50 = 1e3
res.rsource n8 n7 = 0.5, tc1=4.8e-3,tc2=1e-6
res.rvthres n22 n8 = 1, tc1=-9.0e-4,tc2=-7.0e-6
res.rvtemp n18 n19 = 1, tc1=-2.1e-3,tc2=1.8e-6
sw_vcsp.s1a n6 n12 n13 n8 = model=s1amod
sw_vcsp.s1b n13 n12 n13 n8 = model=s1bmod
sw_vcsp.s2a n6 n15 n14 n13 = model=s2amod
sw_vcsp.s2b n13 n15 n14 n13 = model=s2bmod
v.vbat n22 n19 = dc=1
equations {
i (n51->n50) +=iscl
iscl: v(n51,n50) = ((v(n5,n51)/(1e-9+abs(v(n5,n51))))*((abs(v(n5,n51)*1e6/15))** 2.5))
}
}
18
22
+
-
6
8
+
-
19
8
+
-
17
18
6
8
+
-
5
8
+
-
RBREAK
RVTEMP
VBAT
RVTHRES
IT
17 18
19
22
12
13
15
S1A
S1B
S2A
S2B
CA
CB
EGS EDS
14
8
13
8
14
13
MWEAK
EBREAK
DBODY
RSOURCE
SOURCE
11
7
3
LSOURCE
RLSOURCE
CIN
RDRAIN
EVTHRES
16
21
8
MMED
MSTRO
DRAIN
2
LDRAIN
RLDRAIN
DBREAK
DPLCAP
ISCL
RSLC1
10
5
51
50
RSLC2
1
GATE
RGATE
EVTEMP
9
ESG
LGATE
RLGATE
20
+
-
+
-
+
-
6
©2004 Fairchild Semiconductor Corporation FDT461N Rev. A1
FDT461N
PSPICE Thermal Model
REV January 2004
FDT461N_JA Junction Ambient
Copper Area= 1sq.in
CTHERM1 Junction c2 3.0e-5
CTHERM2 c2 c3 3.2e-5
CTHERM3 c3 c4 2.0e-4
CTHERM4 c4 c5 9.6e-2
CTHERM5 c5 c6 8.9e-1
CTHERM6 c6 c7 9.1e-1
CTHERM7 c7 c8 9.3e-1
CTHERM8 c8 Ambient 7
RTHERM1 Junction c2 0.5
RTHERM2 c2 c3 6
RTHERM3 c3 c4 9
RTHERM4 c4 c5 10
RTHERM5 c5 c6 11
RTHERM6 c6 c7 12
RTHERM7 c7 c8 13
RTHERM8 c8 Ambient 16
SABER Thermal Model
SABER thermal model FDT461N
Copper Area= 1sq.in
template thermal_model th tl
thermal_c th, tl
{
ctherm.ctherm1 th c2 = 3.0e-5
ctherm.ctherm2 c2 c3 = 3.2e-5
ctherm.ctherm3 c3 c4 = 2.0e-4
ctherm.ctherm4 c4 c5 = 9.6e-2
ctherm.ctherm5 c5 c6 = 8.9e-1
ctherm.ctherm6 c6 c7 = 9.1e-1
ctherm.ctherm7 c7 c8 = 9.3e-1
ctherm.ctherm8 c8 tl = 7
rtherm.rtherm1 th c2 = 0.5
rtherm.rtherm2 c2 c3 = 6
rtherm.rtherm3 c3 c4 = 9
rtherm.rtherm4 c4 c5 = 10
rtherm.rtherm5 c5 c6 = 11
rtherm.rtherm6 c6 c7 = 12
rtherm.rtherm7 c7 c8 = 13
rtherm.rtherm8 c8 tl = 16
}
RTHERM6
RTHERM8
RTHERM7
RTHERM5
RTHERM4
RTHERM3
CTHERM4
CTHERM6
CTHERM5
CTHERM3
CTHERM2
CTHERM1
tl
8
7
6
5
4
3
JUNCTION
AMBIENT
2
th
RTHERM2
RTHERM1
CTHERM7
CTHERM8
P1-P3P4-P6P7-P9P10-P10

FDT461N

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Manufacturer:
ON Semiconductor / Fairchild
Description:
MOSFET NCH LOGIC ENHANCEMEN MODFIELD EFFECT TRAN
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