©2004 Fairchild Semiconductor Corporation FDT461N Rev. A1
FDT461N
Figure 5. Forward Bias Safe Operating Area Figure 6. Transfer Characteristics
Figure 7. Saturation Characteristics Figure 8. Drain to Source On Resistance vs Gate
Voltage and Drain Current
Figure 9. Normalized Drain to Source On
Resistance vs Junction Temperature
Figure 10. Normalized Gate Threshold Voltage vs
Junction Temperature
Typical Characteristics T
A
= 25°C unless otherwise noted
0.01
0.1
1
110 120
4
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
T
J
= MAX RATED
T
A
= 25
o
C
SINGLE PULSE
LIMITED BY r
DS(ON)
AREA MAY BE
OPERATION IN THIS
100µs
1ms
10ms
0
0.4
0.8
1.2
1.6
1.5 2.0 2.5 3.0 3.5
I
D
, DRAIN CURRENT (A)
V
GS
, GATE TO SOURCE VOLTAGE (V)
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
T
J
= 175
o
C
T
J
= 25
o
C
T
J
= -55
o
C
0
0.4
0.8
1.2
1.6
0 0.5 1.0 1.5 2.0 2.5 3.0
I
D
, DRAIN CURRENT (A)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 2.5V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
T
A
= 25
o
C
V
GS
= 3V
V
GS
= 4.5V
1.0
1.5
2.0
2.5
3.0
2345678910
I
D
= 0.2A
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
= 0.54A
r
DS(ON)
, DRAIN TO SOURCE
ON RESISTANCE (Ω)
PULSE DURATION = 80ms
DUTY CYCLE = 0.5% MAX
0.5
1.0
1.5
2.0
-80 -40 0 40 80 120 160
NORMALIZED DRAIN TO SOURCE
T
J
, JUNCTION TEMPERATURE (
o
C)
ON RESISTANCE
V
GS
= 10V, I
D
= 0.54A
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
0.6
0.8
1.0
1.2
-80 -40 0 40 80 120 160
V
GS
= V
DS
, I
D
= 250µA
NORMALIZED GATE
T
J
, JUNCTION TEMPERATURE (
o
C)
THRESHOLD VOLTAGE
