HTSICH56_48_SDS All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product short data sheet
COMPANY PUBLIC
Rev. 3.1 — 11 December 2014
210331 17 of 21
NXP Semiconductors
HTSICH56; HTSICH48
HITAG S transponder IC
8. Limiting values
[1] Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any conditions other than those described in the Operating Conditions and Electrical
Characteristics section of this specification is not implied.
[2] This product includes circuitry specifically designed for the protection of its internal devices from the damaging effects of excessive static
charge. Nonetheless, it is suggested that conventional precautions should be taken to avoid applying values greater than the rated
maxima
9. Characteristics
[1] Typical ratings are not guaranteed. Values are at 25 C.
[2] Measured with Q
coil
= 20, L
coil
= 7.5 mH, optimal tuned to resonance circuit; V
IN1-IN2
= 2 V (RMS)
Table 20. Limiting values
[1][2]
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
ESD
electrostatic discharge voltage JEDEC JESD 22-A114-AB
Human Body Model
2- kV
I
i(max)
maximum input current IN1-IN2 - 20 mA
T
j
junction temperature 25 +85 C
Table 21. Characteristics
Symbol Parameter Conditions Min Typ
[1]
Max Unit
f
i
input frequency 100 125 150 kHz
V
I
input voltage IN1-IN2
read - 3.5 4.5 V
write - 6.3 7.2 V
I
I
input current IN1-IN2 - - 10 mA
Interface characteristics
C
i
input capacitance between IN1-IN2
HTSICxxxxxEW/x7
[2]
199 210 221 pF
Wafer EEPROM characteristics
t
ret
retention time T
amb
55 C 10--year
N
endu(W)
write endurance 100000 cycle
